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SI7404DN-T1-GE3-VB Product details

Product introduction:

SI7404DN-T1-GE3-VB Product Introduction

**SI7404DN-T1-GE3-VB** is a high-efficiency **N-Channel MOSFET** that uses **Trench technology** and is packaged in **DFN8(3x3)**. This MOSFET is designed for low-voltage applications and has extremely low on-resistance and high drain current carrying capacity. Its **V_DS = 30V** voltage range and **ID = 30A** current capability make it an ideal solution in **power management**, **electric drive**, **load switching** and other fields. This MOSFET has a very low **R_DS(on)** (maximum **13mΩ**), which can significantly reduce power loss and heat generation, improve the overall efficiency of the system, and is suitable for high-frequency and high power density applications such as high-efficiency power conversion and load control.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 30V 1.7V 30A 13mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 30V 1.7V 30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 30V 1.7V 30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
Detailed parameter description

- **Package type**: DFN8(3x3)
- **Configuration**: Single N-Channel MOSFET
- **V_DS (drain to source voltage)**: 30V
- **V_GS (gate to source voltage)**: ±20V
- **V_th (gate threshold voltage)**: 1.7V
- **R_DS(on) (on resistance)**:
- 19mΩ @ V_GS = 4.5V
- 13mΩ @ V_GS = 10V
- **I_D (drain current)**: 30A
- **Maximum power dissipation**: Maximum 75W (typical, depending on specific usage conditions)
- **Operating temperature range**: -55°C to +150°C
- **Maximum junction temperature**: 150°C
- **Technology**: Trench technology
- **Typical applications**: power management, load switching, high-efficiency power conversion modules

Domain and module applications:

Applications and modules

**SI7404DN-T1-GE3-VB** has low on-resistance and high current carrying capacity, making it ideal for applications such as high power and high efficiency power conversion, load control, etc. The following are examples of the application of this product in specific fields:

1. **Power management system**:
- **SI7404DN-T1-GE3-VB** can be used in power management applications for **DC-DC converters**, **AC-DC power modules** and other devices, especially in power conversion that requires high efficiency. Its low **R_DS(on)** and high **I_D** can reduce power loss and heat generation, ensure that the power system can work stably, and improve overall efficiency. It is suitable for **battery management systems**, **chargers** and **electric vehicle battery management**.

2. **DC-DC Converter**:
- In **DC-DC Converter**, **SI7404DN-T1-GE3-VB** can be used as a switching element to improve power conversion efficiency, suitable for **Boost** or **Buck** converters. Its low on-resistance (**13mΩ**) helps minimize power loss, improves system reliability and energy efficiency under high-frequency operation, and is suitable for **Consumer Electronics** and **Communication Equipment Power Supply**.

3. **Load Switch**:
- **SI7404DN-T1-GE3-VB** performs well as a load switch in a variety of applications, especially in devices that require high switching efficiency and low power loss. The MOSFET can operate at a lower gate drive voltage and is suitable for **Battery-powered systems**, **Automotive power switches**, and **LED drivers**, etc.

4. **Electric Vehicles and Charging Systems**:
- Due to its high current handling capability (**30A**), **SI7404DN-T1-GE3-VB** can be used in **Electric Vehicle** Battery Management Systems (BMS) and chargers. The low on-resistance of the MOSFET helps optimize power losses during battery charging and discharging, improving battery charging efficiency and system safety.

5. **Industrial Power Control Systems**:
- In industrial power systems, **SI7404DN-T1-GE3-VB** can be used in **Inverters**, **Motor Drives**, and **Power Conditioning Modules**. Its excellent switching performance and high efficiency can increase the power density of these systems, reduce heat generation, and improve reliability, and are suitable for applications such as **Smart Grid**, **Power Transmission**, and **Industrial Robot Control**.

6. **High-efficiency power supply module**:
- In **High-efficiency power supply module**, **SI7404DN-T1-GE3-VB** can provide stable switching control for **Server power system**, **High-efficiency battery charger** and **Communication equipment power module**. Its low on-resistance characteristics help improve power efficiency and reduce heat loss due to power conversion.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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