Product introduction：
SI7382DP-T1-GE3-VB MOSFET Product Introduction
SI7382DP-T1-GE3-VB is a high-performance single N-channel MOSFET in DFN8 (5x6) package with ultra-low on-resistance and high current carrying capability. It has a drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and a gate threshold voltage (Vth) of 1.7V, which can start at a lower gate drive voltage, suitable for low-power circuit applications. The MOSFET has an extremely low on-resistance of 3mΩ at VGS = 10V and 5mΩ at VGS = 4.5V, which can provide significant power efficiency in high current applications. The maximum drain current (ID) can reach 120A, enabling it to handle high loads and perform power conversion efficiently. SI7382DP-T1-GE3-VB adopts deep trench technology to reduce switching loss and conduction loss, improve overall working efficiency, and is particularly suitable for high frequency and high power density applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
|
3mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
120A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
SI7382DP-T1-GE3-VB MOSFET Detailed parameter description
- **Package**: DFN8 (5x6)
- **Configuration**: Single N channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Gate threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- 5mΩ @ VGS = 4.5V
- 3mΩ @ VGS = 10V
- **Maximum drain current (ID)**: 120A
- **Technology**: Trench (deep trench technology), by reducing on-resistance and switching loss, improve current conduction efficiency and system stability.
Domain and module applications：
SI7382DP-T1-GE3-VB MOSFET Applications and Modules
1. **High-efficiency power conversion and power management**:
Due to its ultra-low on-resistance and high current capability, SI7382DP-T1-GE3-VB is suitable for various high-efficiency power conversion systems, such as DC-DC converters and power management modules. Its excellent performance enables it to reduce losses and improve overall efficiency in high-power density power systems, and is widely used in power supply designs in communication equipment, power electronics, and automotive electronic systems.
2. **Battery Management System (BMS)**:
SI7382DP-T1-GE3-VB is widely used in battery management systems, especially in battery charge and discharge management of electric vehicles (EVs), energy storage devices, and portable devices. Low on-resistance and high current capability make it an ideal choice in battery management systems, which can effectively improve battery charge and discharge efficiency and extend battery life.
3. **Power Tools and Motor Drives**:
This MOSFET is suitable for power tools and motor drive systems, especially in brushless DC motor (BLDC) and stepper motor drive applications. SI7382DP-T1-GE3-VB provides efficient current conduction and low-power drive capabilities, reducing power losses in motor drives, improving system efficiency, and increasing motor response speed.
4. **Inverters and Solar Power Generation Systems**:
Due to its excellent current carrying capacity, SI7382DP-T1-GE3-VB is also widely used in inverters and solar power generation systems, especially in photovoltaic (PV) inverters and battery energy storage systems. The low RDS(ON) characteristics help reduce losses in the power conversion process and improve conversion efficiency, and are key components in renewable energy systems.
5. **Automotive electronics and vehicle power supply**:
In automotive electronics applications, SI7382DP-T1-GE3-VB is suitable for use as a switching element in efficient power conversion and vehicle power management systems, especially in the battery management and charging systems of electric vehicles. Due to its high current capability and low power loss, it can provide efficient and stable power conversion in vehicle systems and improve the overall energy efficiency of electric vehicles.
6. **Load switch and efficient power control**:
SI7382DP-T1-GE3-VB is also very suitable for load switch applications, especially in applications that require high current load control. Its ultra-low on-resistance makes it very efficient in load switching and is widely used in industrial automation, smart home and communication equipment.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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