Product introduction:
SI7370DP-T1-GE3-VB Product Introduction
**SI7370DP-T1-GE3-VB** is a high-performance **N-Channel MOSFET**, using advanced **Trench technology**, and is packaged in **DFN8(5x6)**. This type of MOSFET is designed for applications that require high current, high efficiency and low on-resistance, and is particularly suitable for **power management**, **power conversion** and other fields. Its **V_DS = 60V** operating voltage and **ID = 50A** high current carrying capacity, combined with low **R_DS(on)** (maximum **10mΩ**), enable it to have lower energy loss and heat generation in high-power devices, thereby improving the efficiency of the overall system. **SI7370DP-T1-GE3-VB** is mainly suitable for various power electronic applications such as **DC-DC converters**, **load switches**, **electric vehicles** and **high-efficiency power supply modules**.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
60V |
|
2.5V |
50A |
|
|
10mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
60V |
|
2.5V |
50A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
60V |
|
2.5V |
50A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
- **Package type**: DFN8(5x6)
- **Configuration**: Single N-Channel MOSFET
- **V_DS (drain to source voltage)**: 60V
- **V_GS (gate to source voltage)**: ±20V
- **V_th (gate threshold voltage)**: 2.5V
- **R_DS(on) (on resistance)**:
- 13mΩ @ V_GS = 4.5V
- 10mΩ @ V_GS = 10V
- **I_D (drain current)**: 50A
- **Technology**: Trench technology
- **Maximum power dissipation**: 100W (typical)
- **Operating temperature range**: -40°C to +150°C
- **Maximum junction temperature**: 150°C
- **Maximum pulse current**: 100A (pulse duration limited)
- **Typical applications**: high-efficiency power management, DC-DC conversion, load switching, power conversion modules, etc.
Domain and module applications:
Applications and modules
**SI7370DP-T1-GE3-VB** MOSFET is widely used in various fields due to its excellent electrical characteristics, especially in power conversion and power management systems that require high current and low on-resistance. The following are examples of specific applications of this product:
1. **Power management system**:
- This MOSFET is particularly important in power management systems, especially in **DC-DC converters**, which can effectively control the conversion process of voltage and current. Its low **R_DS(on)** can minimize power loss and improve the efficiency of the system. It is suitable for **power modules**, **battery management systems** and **electric vehicle charging systems**.
2. **DC-DC converter**:
- In power conversion applications, such as **boost converters** and **buck converters**, Si7370DP-T1-GE3-VB acts as a switching element to provide fast current switching and reduce heat loss during power conversion. Due to its high I_D and low R_DS(on), it is particularly effective in **high power density applications**, which can improve conversion efficiency and reduce heat generation.
3. **Load Switch**:
- This MOSFET performs well in **load switch** applications, especially in devices with strict requirements on current and voltage changes. The Si7370DP-T1-GE3-VB can achieve fast and efficient switching operations. Its low on-resistance reduces switching losses, improves reliability and response speed, and is suitable for occasions such as **electric drive** and **LED driver**.
4. **Electric Vehicle (EV) Power System**:
- The Si7370DP-T1-GE3-VB has a wide range of applications in battery management systems (BMS) and charging management in electric vehicles. Since the battery system of electric vehicles requires efficient power management, MOSFET plays a key role in **battery charging and discharging** control, helping to optimize the battery's operating efficiency and extend its service life.
5. **Industrial power control system**:
- In the industrial field, Si7370DP-T1-GE3-VB can be used for **motor drives**, **inverters** and **power conditioning modules**. In these applications, MOSFET plays a core switching role, ensuring efficient current transmission while reducing the energy loss of the system, suitable for high-efficiency industrial power control.
6. **High-efficiency power supply module**:
- In the **high-efficiency power supply module**, Si7370DP-T1-GE3-VB, as a key switching element, can handle higher voltages and large currents, and is widely used in **server power supply systems**, **high-efficiency battery chargers**, **communication equipment power modules**, etc. Its low on-resistance ensures that the system maintains low energy losses even when operating at high speeds.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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