Product introduction:
Product Introduction:
**SI7174DP-VB** is a high-performance single N-channel power MOSFET that uses **Trench** technology and adopts **DFN8(5X6)** package. It is suitable for systems requiring high efficiency and high power density. The maximum drain-source voltage of this MOSFET is **80V**, which can withstand high voltage and high current application environments. Its low on-resistance (**R_DS(on)**) minimizes power loss under high current conditions and improves the efficiency of the circuit. It is particularly suitable for high-power switching power supplies and electric drive systems. **SI7174DP-VB** MOSFET has a maximum leakage current of **60A** and has very low switching losses, making it suitable for high-frequency applications.
This MOSFET is suitable for power management, electric vehicles, power tools, inverters and other fields, and performs well in high-load, high-efficiency power systems.
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Product parameter:
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
80V |
|
3V |
60A |
|
|
5mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
80V |
|
3V |
60A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp(V) |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
80V |
|
3V |
60A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description:
- **Package type**: DFN8(5X6)
- **Configuration**: Single N-channel
- **Maximum drain-source voltage (V_DS)**: 80V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 3V
- **On-resistance (R_DS(on))**:
- 7mΩ @ V_GS = 4.5V
- 5mΩ @ V_GS = 10V
- **Maximum leakage current (I_D)**: 60A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Maximum power loss**: Suitable for high power loads and has low power consumption characteristics to ensure efficient system operation
Domain and module applications:
Product application areas and modules:
**1. High-efficiency power management: **
**SI7174DP-VB** MOSFET is widely used in **DC-DC converters**, **power management systems** and **load switching power supplies** due to its ultra-low on-resistance and high current capability. Low R_DS(on) can significantly reduce power loss and improve power conversion efficiency, especially in high-frequency, high-load power supplies.
**2. Electric vehicles and power tools: **
In the battery management and drive systems of electric vehicles (EVs) and power tools, **SI7174DP-VB** MOSFET can provide reliable current switching capabilities. Its maximum leakage current of 60A makes it very suitable for use in battery management systems (BMS) and power tools in electric vehicles, especially in situations where fast and efficient switching current is required, such as motor drives and power conditioning modules.
**3. Inverter and Solar Applications: **
This MOSFET is also suitable for inverter applications such as **solar inverter** and **UPS power supply**. Due to its low on-resistance and excellent switching performance, it can effectively reduce power loss under high current conditions, improve the efficiency of the inverter, and ensure the stability and reliability of energy conversion.
**4. Communication Equipment and High-Frequency Applications: **
In high-frequency switching power supplies and communication equipment, **SI7174DP-VB** MOSFET can switch quickly and provide low switching losses, so it is very suitable for high-frequency power applications, such as **RF amplifiers**, **radio frequency power supplies**, and some high-efficiency power amplifier systems.
**5. Industrial Power Supply and Battery Charging System: **
This MOSFET is also widely used in industrial power supplies, battery chargers and battery protection circuits. Its high current capability and low R_DS(on) characteristics enable excellent performance when handling high-power systems, especially in applications that require large current charging and discharging.
By adopting the **SI7174DP-VB** MOSFET, designers can achieve excellent performance in a variety of high-load, high-efficiency power applications, ensuring stable system operation and low-power and high-efficiency power conversion.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support:
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