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SI7172DP-T1-GE3-VB Product details

Product introduction:

SI7172DP-T1-GE3-VB MOSFET Product Introduction

**SI7172DP-T1-GE3-VB** is a single N-channel metal oxide semiconductor field effect transistor (MOSFET) using **Trench technology**, with efficient power switching characteristics, packaged as **DFN8 (5x6)**, suitable for medium to high voltage power management and conversion applications. The **maximum drain-source voltage** (VDS) of this model is **200V**, which is suitable for systems requiring medium and high voltage switches. It is widely used in power supplies, industrial control and automotive electronics. The **threshold voltage** (Vth) of this MOSFET is 3V, which has a low switching threshold and ensures that it can be turned on at a lower gate voltage. Its **RDS(ON)** is **38mΩ** at a gate voltage of 10V, providing good conduction performance and suitable for high current applications. The **maximum drain current** (ID) is 30A, making it suitable for high power loads and occasions requiring high current carrying.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-N 200V 3V 30A 38mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-N 200V 3V 30A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-N 200V 3V 30A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-N
SI7172DP-T1-GE3-VB MOSFET Detailed Parameter Description

| **Parameter** | **Value** | **Description** |
|------------------|-----------------------|---------------------------------------------|
| **Model** | SI7172DP-T1-GE3-VB | |
| **Package** | DFN8 (5x6) | Compact surface mount package for space-constrained applications|
| **Configuration** | Single N-channel | High current carrying capability for medium and high voltage applications|
| **VDS** | 200V | Maximum drain-source voltage is 200V, suitable for medium and high voltage applications|
| **VGS** | ±20V | Gate-source voltage range is ±20V, supporting standard gate drive voltage|
| **Vth** | 3V | Threshold voltage is 3V, suitable for low voltage gate drive|
| **RDS(ON)** | 38mΩ@VGS=10V | On-resistance at 10V gate voltage|
| **ID** | 30A | Maximum drain current is 30A, suitable for medium and high current loads|
| **Technology** | Trench technology | High-efficiency trench technology reduces switching losses and on-resistance|

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Domain and module applications:

SI7172DP-T1-GE3-VB MOSFET Applicable fields and modules

**1. Power management and DC-DC converters: **
- **SI7172DP-T1-GE3-VB** MOSFET is particularly suitable for **power management systems**, especially in **DC-DC converters** and **AC-DC power converters**, and can provide efficient power conversion in medium voltage ranges (such as 12V to 200V). Its low on-resistance (RDS(ON) = 38mΩ@VGS=10V) can reduce power loss and improve the overall efficiency of the system, especially for power modules in automotive, industrial and consumer electronic devices.

**2. Power tools and motor drives: **
- In **power tools** and **motor drive** applications, **SI7172DP-T1-GE3-VB** can provide efficient switching capabilities for the drive system, especially in high current and medium voltage motor drive systems. Due to its high current carrying capacity (up to 30A), this MOSFET can effectively manage the starting, running and speed regulation of the motor, reduce heat generation and improve driving efficiency.

**3. Battery Management System (BMS): **
- In the **Battery Management System (BMS)**, this MOSFET can optimize the charging and discharging process. Its high current capability (30A) makes it particularly suitable for the management of high-capacity battery packs, ensuring that the battery maintains high efficiency and safety during the charging and discharging process. Application scenarios include electric vehicle battery management systems, solar energy storage systems, and other high-current battery packs.

**4. Automotive Electronics: **
- In the **Automotive Electronics** field, especially in the power systems of **Electric Vehicles (EVs)** and **Hybrid Electric Vehicles (HEVs), the SI7172DP-T1-GE3-VB MOSFET can be used as a key component in power switches and battery management modules. Due to its high voltage and current capabilities, it can efficiently control the charging and discharging process of the battery while supporting the drive of high-power motors and other high-load electronic devices.

**5. High-efficiency power conversion and inverters: **
- In **high-efficiency power conversion** and **solar inverter** applications, the SI7172DP-T1-GE3-VB MOSFET makes the entire power conversion process more efficient through its low on-resistance and high current carrying capacity, which can reduce switching losses and thermal management issues. It is particularly suitable for inverters, power amplifiers, and power conversion modules that require medium to high voltages (such as 48V to 200V).

**6. Home appliances and industrial equipment: **
- In home appliances and industrial automation equipment, the SI7172DP-T1-GE3-VB MOSFET is widely used in systems such as power management, speed control, and load switching. Its high current capability and medium and high voltage characteristics make it an ideal choice for high-efficiency power and drive systems, especially in industrial applications that require stable and long-term operation.

With its **high voltage (200V)**, **high current (30A)** and **low on-resistance**, SI7172DP-T1-GE3-VB MOSFET can be widely used in power management, power conversion, battery management, automotive electronics and industrial control and other fields, providing efficient and reliable solutions to meet various high-performance and high-efficiency application requirements.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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