Product introduction：
SI7160DP-T1-GE3-VB Product Introduction
SI7160DP-T1-GE3-VB is a high-performance, single N-channel MOSFET in a DFN8(5x6) package, designed for high-power, high-efficiency applications. It has extremely low on-resistance (RDS(ON)) and excellent current carrying capacity, with a maximum drain-source voltage (VDS) of 30V, a gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of 1.7V. With a maximum drain current (ID) of 80A, this MOSFET is suitable for a variety of applications requiring high current, high efficiency, and low power loss, and is particularly suitable for power management and power conversion modules.
Manufactured using the Trench process, the SI7160DP-T1-GE3-VB performs well in low-voltage, high-current applications, providing lower on-resistance, significantly reducing power loss, and improving efficiency. Its compact DFN8(5x6) package helps improve thermal performance, making it suitable for space-constrained applications that require high performance.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
|
7mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(5X6) |
Single-N |
30V |
|
1.7V |
80A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(5X6) |
Single-N |
|
|
|
|
|
|
|
Detailed parameter description
| **Parameter** | **Value** |
|------------------------|---------------------------------|
| **Package** | DFN8 (5x6) |
| **Configuration** | Single N-type channel|
| **Maximum drain-source voltage (VDS)** | 30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 1.7V |
| **On-resistance (RDS(ON))** | 9mΩ @ VGS = 4.5V |
| | 7mΩ @ VGS = 10V |
| **Maximum drain current (ID)** | 80A |
| **Technology** | Trench |
Domain and module applications：
Applicable fields and modules
1. **Power management system**:
SI7160DP-T1-GE3-VB is suitable for various power management systems, especially in high-efficiency DC-DC converters. Its low on-resistance and high current carrying capacity enable it to provide efficient and stable power conversion in battery-powered systems, server power supplies, data centers, and industrial equipment. It can significantly improve power efficiency, reduce heat generation, and extend the service life of equipment.
2. **Electric vehicle (EV) battery management and drive system**:
In the battery management system and power control module of electric vehicles, SI7160DP-T1-GE3-VB can greatly improve power conversion efficiency as a switching element. Due to the high requirements of electric vehicles for power density and energy efficiency, the low RDS(ON) characteristics of this MOSFET can effectively reduce energy loss during battery charging and discharging, and improve the performance and endurance of the system.
3. **Industrial Power and Automation Equipment**:
Suitable for high-efficiency power modules in industrial automation equipment, such as PLC power supplies and variable frequency drive (VFD) systems. Its high current handling capability enables it to cope with a variety of loads and high power requirements, providing stable power support in industrial environments. In addition, low on-resistance helps improve the energy efficiency of equipment and reduce power loss.
4. **Computer and Server Power Systems**:
In computer and server power systems, SI7160DP-T1-GE3-VB is an ideal switching element. Its high current carrying capacity and low on-resistance help improve power conversion efficiency, reduce heat dissipation requirements, and ensure stable power operation. It is particularly suitable for power management modules in high-performance computing systems, network equipment, and storage systems.
5. **Power Management for Communication Equipment**:
In communication equipment, especially base station power supplies, wireless communication systems, and power management modules for mobile base stations, SI7160DP-T1-GE3-VB can be used as an efficient power switch. It can improve the energy efficiency of the system, reduce heat generation, and adapt to power conversion under different load conditions to ensure the stable operation of communication equipment.
6. **Inverter in photovoltaic system**:
In photovoltaic power generation system, SI7160DP-T1-GE3-VB can be used for power conversion and power management in solar inverter. Its high current handling capability and low loss characteristics make it an ideal choice for high-efficiency inverter in photovoltaic power generation system, which helps to improve the conversion efficiency of the system and optimize energy output.
7. **Consumer electronics and portable devices**:
In addition to high current applications, SI7160DP-T1-GE3-VB can also be applied to the power management of some high-efficiency consumer electronic devices, such as smartphones, laptops, tablets, etc. Its low on-resistance and small package are very suitable for miniaturized devices, ensuring high-efficiency power supply and effectively reducing energy loss.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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