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SI7159DP-T1-GE3-VB Product details

Product introduction:

1. Product Introduction - SI7159DP-T1-GE3-VB

SI7159DP-T1-GE3-VB is a high-performance P-channel MOSFET based on Trench technology, designed for high current, low voltage applications. Its package type is DFN8 (5x6), which can provide excellent performance in a compact space. The maximum drain-source voltage (VDS) of this MOSFET is -30V, the maximum gate-source voltage (VGS) supports ±20V, and the operating threshold voltage (Vth) is -3V, which is suitable for various power management and load control systems. Its RDS(on) is 6mΩ at VGS = 4.5V and 4mΩ at VGS = 10V, showing excellent conduction performance, which can reduce power loss and improve system efficiency. The maximum drain current (ID) of this MOSFET is -120A, which is particularly suitable for applications that require high current control and high efficiency.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(5X6) Single-P -30V -3V -120A 4mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(5X6) Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(5X6) Single-P -30V -3V -120A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(5X6) Single-P -30V -3V -120A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(5X6) Single-P
2. Detailed parameter description

- **Model**: SI7159DP-T1-GE3-VB
- **Package type**: DFN8 (5x6)
- **Configuration**: Single-P-Channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Operation threshold voltage (Vth)**: -3V
- **RDS(on)**:
- 6mΩ @ VGS = 4.5V
- 4mΩ @ VGS = 10V
- **Maximum drain current (ID)**: -120A
- **Technology**: Trench
- **Application areas**: High-efficiency power conversion, electric drive systems, battery management systems, automotive electronics, power modules, power tools, etc.

Domain and module applications:

3. Applications and module examples

1. **High-efficiency power conversion**:
SI7159DP-T1-GE3-VB is an ideal choice for high-efficiency power conversion systems, especially for DC-DC converters, AC-DC power supplies, etc. that require high current carrying capacity. Its 120A current carrying capacity and low RDS(on) characteristics can reduce power loss and improve the conversion efficiency of the system. Under high current and high load, it can ensure stable operation of the power module, which is particularly suitable for power management of power-intensive equipment.

2. **Electric drive system**:
In power tools, electric vehicles and other electric drive systems, the high current carrying capacity of SI7159DP-T1-GE3-VB makes it very suitable for switching control of drive motors. This MOSFET can provide low on-resistance under high current load, ensure efficient driving of power tools or electric vehicles, and reduce system heating, thereby improving the overall efficiency and service life of the system.

3. **Battery Management System (BMS)**:
Battery management systems are used to monitor and manage the charging and discharging process of batteries to ensure battery safety and efficiency. SI7159DP-T1-GE3-VB can provide stable and efficient current switching capabilities in such applications to help optimize the charging process and load distribution. Its low RDS(on) and high current carrying capacity are critical for efficient battery management, especially in electric vehicles and energy storage systems.

4. **Automotive Electronics**:
In the field of automotive electronics, MOSFETs are widely used in power management, power systems, and battery management. The 120A current carrying capacity of SI7159DP-T1-GE3-VB makes it very suitable for applications such as electric vehicle drive systems, battery management systems, and power control. The MOSFET provides low-power switching control in these systems, improves efficiency, reduces heat loss, and ensures system stability and reliability.

5. **Power Module and Load Control System**:
In power modules, MOSFETs are used for control and current switching of high-power loads. SI7159DP-T1-GE3-VB has low on-resistance and high current carrying capacity, suitable for applications such as power distribution and current regulation, which can reduce power loss in the system, improve efficiency, and provide reliable load switching. It is widely used in industrial power supplies, server power modules, and communication systems.

6. **Power tools**:
Power tools, such as electric drills and electric saws, usually require efficient current control to drive the motor. The high current carrying capacity and low RDS(on) characteristics of SI7159DP-T1-GE3-VB make it very suitable for these applications, which can reduce heat generation and ensure that the power tools work efficiently and stably while extending battery life.

7. **Solar panels and energy storage systems**:
In solar systems and energy storage systems, SI7159DP-T1-GE3-VB can be used for power management, charge and discharge control, and load distribution. Its high current carrying capability and low on-resistance can significantly improve the overall system efficiency, especially in applications such as solar inverters, energy storage management and battery charging modules.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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