Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X3) |
Single-N |
40V |
|
2.5V |
40A |
|
|
4.5mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X3) |
Single-N |
40V |
|
2.5V |
40A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X3) |
Single-N |
40V |
|
2.5V |
40A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X3) |
Single-N |
|
|
|
|
|
|
|
**SI7116DN-T1-GE3-VB MOSFET Detailed Parameter Description**
- **Package Type**: DFN8(3X3)
- Adopting DFN8(3X3) package, it has a small size and good heat dissipation performance, suitable for high-density, high-power applications, and can achieve efficient power conversion in a limited space.
- **Configuration**: Single-N-Channel
- As a single N-channel MOSFET, it can control current at the low potential end of the load and is widely used in efficient power conversion, power management, switching power supplies, etc.
- **VDS (drain-source voltage)**: 40V
- Supports a maximum drain-source voltage of 40V, suitable for medium-voltage power supply systems, and has high voltage tolerance.
- **VGS (gate-source voltage)**: ±20V
- The gate-source voltage range is ±20V, which can work stably under common drive voltages.
- **Vth (threshold voltage)**: 2.5V
- The threshold voltage is 2.5V. The lower threshold voltage allows the MOSFET to start at a lower gate drive voltage, which helps improve the switching efficiency of the system.
- **RDS(ON) (on-resistance)**:
- **6mΩ** @VGS=4.5V
- **4.5mΩ** @VGS=10V
- The on-resistance is extremely low, which means that the energy loss of the MOSFET in the on state is very small, which can achieve efficient power transmission and reduce heat loss.
- **ID (drain current)**: 40A
- The maximum drain current is 40A, which can provide high current drive and is suitable for power management, power amplification and electric drive applications with high power requirements.
---
Domain and module applications：
**Application fields and modules of SI7116DN-T1-GE3-VB MOSFET**
1. **High-efficiency power conversion system**
SI7116DN-T1-GE3-VB is particularly suitable for high-efficiency power conversion systems such as switching power supplies (SMPS) and DC-DC converters with its low on-resistance and high current carrying capacity. It can provide stable current output at low power loss, thereby improving the efficiency of the entire power system, and is widely used in computer power supplies, communication equipment, servers and other high-efficiency power management applications.
2. **Electric Vehicles (EV) and Battery Management Systems (BMS)**
Due to its high current capability and low on-resistance, SI7116DN-T1-GE3-VB is an ideal choice in electric vehicles (EV) and battery management systems (BMS). During the battery charging and discharging process, this MOSFET can efficiently control the current flow, provide the necessary power control functions, and ensure the safety and efficient operation of the battery.
3. **DC-DC Converter and Power Management**
In DC-DC converters and power management modules, SI7116DN-T1-GE3-VB is widely used to provide stable power conversion and management. Its low on-resistance and high current handling capability enable it to provide precise and efficient current transmission in various power demand applications, especially in power-sensitive devices.
4. **Industrial Power Control and Switching Circuits**
SI7116DN-T1-GE3-VB can be widely used in industrial power control systems such as power tools, power drive equipment, industrial automation systems, etc. These systems usually need to handle high currents and require efficient and stable power conversion. SI7116DN-T1-GE3-VB perfectly meets these needs.
5. **Computer hardware and data centers**
In computer hardware and data centers, especially in power management modules for servers, storage devices, and network devices, SI7116DN-T1-GE3-VB is used in high-frequency, high-current switching power supply designs. It can efficiently convert input power into stable output power to meet the needs of high-performance hardware.
6. **Consumer electronic devices**
In consumer electronic devices (such as TVs, audio, game consoles, etc.), SI7116DN-T1-GE3-VB can be used as an efficient power management component to improve the energy efficiency of the overall equipment, reduce heat loss, and provide efficient and stable power support.
7. **LED drive and lighting control system**
SI7116DN-T1-GE3-VB is widely used in LED drivers, especially in systems that require high current drive and efficient power conversion. It can provide stable power for LED lighting while ensuring low heat loss, and is suitable for commercial lighting, automotive lighting, home lighting and other fields.
8. **Mobile devices and battery-powered systems**
In mobile devices and battery-powered systems, SI7116DN-T1-GE3-VB can be used for battery charging and discharging control, as well as battery protection circuits to ensure safe operation of the battery under high current loads.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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