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SI7108DN-T1-GE3-VB Product details

Product introduction:

SI7108DN-T1-GE3-VB Product Introduction

SI7108DN-T1-GE3-VB is a single N-channel MOSFET in a DFN8(3x3) package, designed for high-efficiency power management and load switching applications. This MOSFET has a maximum drain-source voltage (VDS) of 20V, a maximum gate-source voltage (VGS) of ±12V, and a very low on-resistance (RDS(ON) of 5.5mΩ, whether at VGS = 2.5V or 4.5V), which gives it excellent current carrying capability in higher current applications, with a maximum drain current (ID) of 58A. It uses a Trench process, which provides excellent switching performance and low power losses, making it an ideal choice for power conversion and control applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X3) Single-N 20V 0.5~1.5V 58A 5.5mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X3) Single-N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X3) Single-N 20V 0.5~1.5V 58A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X3) Single-N 20V 0.5~1.5V 58A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X3) Single-N
Detailed parameter description

| **Parameter** | **Value** |
|------------------------|---------------------------------|
| **Package** | DFN8 (3x3) |
| **Configuration** | Single N-type channel|
| **Maximum drain-source voltage (VDS)** | 20V |
| **Gate-source voltage (VGS)** | ±12V |
| **Threshold voltage (Vth)** | 0.5V ~ 1.5V |
| **On-resistance (RDS(ON))** | 5.5mΩ @ VGS = 2.5V |
| | 5.5mΩ @ VGS = 4.5V |
| **Maximum drain current (ID)** | 58A |
| **Technology** | Trench |

Domain and module applications:

Applicable fields and modules: 1. **DC-DC converter**: SI7108DN-T1-GE3-VB can be widely used in various DC-DC converters, especially in power systems that require high efficiency and high current output. Low RDS(ON) and high current carrying capacity make it an ideal switching element in power management systems, which can effectively improve conversion efficiency, reduce power loss, and increase battery life. It is suitable for use in communications, power tools, consumer electronics and other fields. 2. **Battery Management System (BMS): SI7108DN-T1-GE3-VB can be used as a battery charge and discharge control switch in battery management systems, especially in scenarios that require high current and efficient power control. Low on-resistance ensures efficient energy transmission during charging, reduces energy loss, and helps extend battery life. It is suitable for battery management applications in power tools, smartphones and other portable devices.

3. **Electric Vehicle (EV) Charging and Power Management**:
In the power system and charging equipment of electric vehicles, SI7108DN-T1-GE3-VB can be used in battery charging management, motor drive and power conversion systems. Its high current handling capability and low on-resistance make it particularly suitable for high-efficiency battery charging and discharging control of electric vehicles, improving charging efficiency and reducing energy loss.

4. **Industrial Automation and Power Control Modules**:
In industrial equipment, especially automation control systems, SI7108DN-T1-GE3-VB can be used in functional modules such as power converters, load switches and overcurrent protection. It has excellent performance in high current and high frequency switching applications, ensuring stable system operation and maximizing power management efficiency.

5. **Consumer Electronic Devices**:
SI7108DN-T1-GE3-VB is suitable for power management in various consumer electronic products, such as smartphones, tablets, laptops and other portable devices. Its low on-resistance and high current carrying capacity help achieve efficient power conversion and load management on compact circuit boards.

6. **Photovoltaic inverter and energy conversion system**:
This MOSFET is also suitable for applications such as inverters and power factor correction circuits in photovoltaic systems. The low on-resistance makes it play an important role in high-efficiency energy conversion and maximum power point tracking (MPPT) processes, which can effectively improve the overall efficiency of solar cell systems and reduce energy losses.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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