SI6981DQ-T1-GE3-VB Product details
Product introduction:
**SI6981DQ-T1-GE3-VB** is a dual P-Channel MOSFET in TSSOP8 package with Trench technology, designed for high-efficiency power management applications. It has low R_DS(on), low switching loss and high current carrying capacity, suitable for battery drive systems, power conversion, load switching and other fields. This model provides a maximum drain voltage of -20V, a maximum drain current of -7.5A, and can maintain low on-resistance at low gate-source voltage, ensuring high efficiency and reliability in various applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | 13mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
- **Package**: TSSOP8
- **Configuration**: Dual P-Channel MOSFET (Dual-P+P-Channel)
- **V_DS (drain to source voltage)**: -20V
- **V_GS (gate to source voltage)**: ±20V
- **V_th (gate threshold voltage)**: -1.2V
- **R_DS(on) (on-resistance)**:
- 18mΩ @ V_GS = 4.5V
- 13mΩ @ V_GS = 10V
- **I_D (drain current)**: -7.5A
- **Technology**: Trench technology
- **Operating temperature range**: -40°C to 125°C
- **Application areas**: power management, load switching, battery management, electric vehicles, etc.
Domain and module applications:
**SI6981DQ-T1-GE3-VB** is widely used in many power management systems and high-efficiency switch modules. The following are several major application areas of this model:
1. **Battery Management System (BMS)**:
- In battery management systems, especially in applications such as lithium battery charge and discharge control and balancing circuits, SI6981DQ-T1-GE3-VB can effectively control battery current flow, improve battery efficiency and extend battery life with its low on-resistance and high current capability.
2. **DC-DC Converter**:
- As a switching element in a DC-DC converter, this MOSFET can effectively reduce energy loss at high switching frequencies and provide high-efficiency voltage conversion, suitable for various voltage regulation and power conversion applications.
3. **Power Supplies and Regulators**:
- In power supplies and regulators, the SI6981DQ-T1-GE3-VB is suitable for high-efficiency power rail switching, which can optimize the power management system, reduce power loss, and improve overall system efficiency. The low R_DS(on) feature helps reduce heat generation and ensure system stability.
4. **Electric Vehicles (EV)**:
- This MOSFET is used for high-efficiency current switching in the battery power management system of electric vehicles. It is particularly suitable for electric vehicle charging control and battery power scheduling, which can improve the range of electric vehicles by reducing heat loss through improved efficiency.
5. **High-efficiency Load Switch**:
- In power switch modules, the SI6981DQ-T1-GE3-VB can be used as a high-efficiency load switch, which can quickly switch current to ensure stable operation of the device, especially in high-frequency switching applications, where its low on-resistance can significantly improve system efficiency.
6. **Smart home appliances and wearable devices**:
- In smart home devices, smart watches and other wearable devices, SI6981DQ-T1-GE3-VB is a key component for power switching and battery management applications, which can effectively improve battery performance and extend battery life.
In summary, **SI6981DQ-T1-GE3-VB** MOSFET has low on-resistance, low power consumption, high efficiency and reliability, and is widely used in many fields that require fast switching and efficient power management. It is particularly suitable for use in efficient power management, battery management and green energy systems.
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