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SI6973DQ-T1-GE3-VB Product details
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**SI6973DQ-T1-GE3-VB MOSFET Product Introduction**
**Model**: SI6973DQ-T1-GE3-VB
**Package Type**: TSSOP8
**Configuration**: Dual-P+P-Channel
**Technology**: Trench
**Maximum Drain-Source Voltage (VDS)**: -20V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: -1.2V
**On-Resistance (RDS(ON))**:
- **18mΩ** @VGS=4.5V
- **13mΩ** @VGS=10V
**Maximum Drain Current (ID)**: -7.5A
SI6973DQ-T1-GE3-VB is a dual P+P-channel MOSFET using Trench technology, with low on-resistance and high current carrying capacity, especially suitable for low voltage power management systems. It has a wide gate voltage control range and low conduction loss, which is very suitable for applications such as battery management, power switching, load control, etc., and can provide high-efficiency current control and switching performance.
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**Model**: SI6973DQ-T1-GE3-VB
**Package Type**: TSSOP8
**Configuration**: Dual-P+P-Channel
**Technology**: Trench
**Maximum Drain-Source Voltage (VDS)**: -20V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: -1.2V
**On-Resistance (RDS(ON))**:
- **18mΩ** @VGS=4.5V
- **13mΩ** @VGS=10V
**Maximum Drain Current (ID)**: -7.5A
SI6973DQ-T1-GE3-VB is a dual P+P-channel MOSFET using Trench technology, with low on-resistance and high current carrying capacity, especially suitable for low voltage power management systems. It has a wide gate voltage control range and low conduction loss, which is very suitable for applications such as battery management, power switching, load control, etc., and can provide high-efficiency current control and switching performance.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | 13mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
**SI6973DQ-T1-GE3-VB MOSFET Detailed Parameter Description**
- **Package Type**: TSSOP8
- The TSSOP8 package design is suitable for use in applications with compact space and heat dissipation requirements.
- **Configuration**: Dual-P+P-Channel
- This configuration enables the MOSFET to support reverse current flow, suitable for bidirectional current control occasions, especially in power management and load switching.
- **VDS (drain-source voltage)**: -20V
- The maximum drain-source voltage supported is -20V, suitable for low-voltage power systems, especially mobile devices or low-voltage electronic products.
- **VGS (gate-source voltage)**: ±20V
- The wide range of gate voltage (±20V) is suitable for various control voltage environments and can flexibly drive various power systems.
- **Vth (Threshold Voltage)**: -1.2V
- The relatively low threshold voltage enables the MOSFET to turn on at a lower gate voltage, increasing the switching speed and being suitable for low voltage control systems.
- **RDS(ON) (On-Resistance)**:
- **18mΩ** @VGS=4.5V
- **13mΩ** @VGS=10V
- Low on-resistance means less power loss in the on state, which helps improve system efficiency and reduce heat generation.
- **ID (Drain Current)**: -7.5A
- The maximum drain current is -7.5A, which is suitable for medium current load applications, especially power management or load control circuits that require higher current carrying capacity.
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- **Package Type**: TSSOP8
- The TSSOP8 package design is suitable for use in applications with compact space and heat dissipation requirements.
- **Configuration**: Dual-P+P-Channel
- This configuration enables the MOSFET to support reverse current flow, suitable for bidirectional current control occasions, especially in power management and load switching.
- **VDS (drain-source voltage)**: -20V
- The maximum drain-source voltage supported is -20V, suitable for low-voltage power systems, especially mobile devices or low-voltage electronic products.
- **VGS (gate-source voltage)**: ±20V
- The wide range of gate voltage (±20V) is suitable for various control voltage environments and can flexibly drive various power systems.
- **Vth (Threshold Voltage)**: -1.2V
- The relatively low threshold voltage enables the MOSFET to turn on at a lower gate voltage, increasing the switching speed and being suitable for low voltage control systems.
- **RDS(ON) (On-Resistance)**:
- **18mΩ** @VGS=4.5V
- **13mΩ** @VGS=10V
- Low on-resistance means less power loss in the on state, which helps improve system efficiency and reduce heat generation.
- **ID (Drain Current)**: -7.5A
- The maximum drain current is -7.5A, which is suitable for medium current load applications, especially power management or load control circuits that require higher current carrying capacity.
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Domain and module applications：
**Application fields and modules of SI6973DQ-T1-GE3-VB MOSFET**
1. **Battery Management System (BMS)**:
In the battery management system, SI6973DQ-T1-GE3-VB can be used as an overcurrent protection, charging control and load switching element for the battery. Its low on-resistance and high current carrying capacity make it an ideal choice for the battery charging and discharging process, which can effectively extend the battery life and ensure the safe operation of the battery.
2. **Power Management System**:
This MOSFET is very suitable for use in efficient power management circuits, and can effectively control the switching and load management of the power supply. It can provide precise current control in low voltage environments and is widely used in portable electronic devices, mobile power supplies, power adapters and other fields to help improve power conversion efficiency and reduce power loss.
3. **DC-DC Converter**:
In the DC-DC converter, SI6973DQ-T1-GE3-VB can be used as an efficient switching element, providing low RDS(ON) to reduce power loss and improve the overall efficiency of the system. It can be used for applications such as lowering voltage, raising voltage or current switching, and is suitable for a wide range of power conversion applications, such as use in voltage regulation modules, photovoltaic power systems and other fields.
4. **Load Switch Application**:
In load switch applications, SI6973DQ-T1-GE3-VB can be used to automatically switch loads to ensure the accuracy and reliability of load connection. Due to its low on-resistance, it can effectively reduce power loss during load switching and is suitable for load switching in home appliances, consumer electronics, automotive electronics and other equipment.
5. **Intelligent power supply and protection circuit**:
In intelligent power supply and protection circuit, this MOSFET can be used for power switch control, especially in battery-powered systems, it can provide over-current protection, over-temperature protection and other functions to ensure the safety and efficiency of batteries and power systems during long-term use.
6. **Automotive electronics and battery management**:
In automotive electronic systems, SI6973DQ-T1-GE3-VB can be used for vehicle battery management systems, battery charge and discharge control, electric vehicle power systems and other battery-related applications. It can accurately control the flow of current during battery charging, improve battery charging efficiency and safety, and ensure the reliable operation of automotive electronic systems.
7. **Consumer electronic devices**:
In consumer electronic products such as smartphones, portable chargers, etc., SI6973DQ-T1-GE3-VB can be used for power management and battery control. While ensuring the efficient operation of the equipment, it can also effectively reduce energy loss, extend battery life and improve user experience.
1. **Battery Management System (BMS)**:
In the battery management system, SI6973DQ-T1-GE3-VB can be used as an overcurrent protection, charging control and load switching element for the battery. Its low on-resistance and high current carrying capacity make it an ideal choice for the battery charging and discharging process, which can effectively extend the battery life and ensure the safe operation of the battery.
2. **Power Management System**:
This MOSFET is very suitable for use in efficient power management circuits, and can effectively control the switching and load management of the power supply. It can provide precise current control in low voltage environments and is widely used in portable electronic devices, mobile power supplies, power adapters and other fields to help improve power conversion efficiency and reduce power loss.
3. **DC-DC Converter**:
In the DC-DC converter, SI6973DQ-T1-GE3-VB can be used as an efficient switching element, providing low RDS(ON) to reduce power loss and improve the overall efficiency of the system. It can be used for applications such as lowering voltage, raising voltage or current switching, and is suitable for a wide range of power conversion applications, such as use in voltage regulation modules, photovoltaic power systems and other fields.
4. **Load Switch Application**:
In load switch applications, SI6973DQ-T1-GE3-VB can be used to automatically switch loads to ensure the accuracy and reliability of load connection. Due to its low on-resistance, it can effectively reduce power loss during load switching and is suitable for load switching in home appliances, consumer electronics, automotive electronics and other equipment.
5. **Intelligent power supply and protection circuit**:
In intelligent power supply and protection circuit, this MOSFET can be used for power switch control, especially in battery-powered systems, it can provide over-current protection, over-temperature protection and other functions to ensure the safety and efficiency of batteries and power systems during long-term use.
6. **Automotive electronics and battery management**:
In automotive electronic systems, SI6973DQ-T1-GE3-VB can be used for vehicle battery management systems, battery charge and discharge control, electric vehicle power systems and other battery-related applications. It can accurately control the flow of current during battery charging, improve battery charging efficiency and safety, and ensure the reliable operation of automotive electronic systems.
7. **Consumer electronic devices**:
In consumer electronic products such as smartphones, portable chargers, etc., SI6973DQ-T1-GE3-VB can be used for power management and battery control. While ensuring the efficient operation of the equipment, it can also effectively reduce energy loss, extend battery life and improve user experience.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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