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SI6969DQ-T1-GE3-VB Product details
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Product Introduction:
**SI6969DQ-T1-GE3-VB** is a dual P-channel power MOSFET in **TSSOP8** package, configured as **P+P-Channel** structure. This MOSFET has a maximum drain-source voltage (V_DS) of -30V, a gate-source voltage (V_GS) of ±20V, and a switching threshold voltage (V_th) of -1.7V, which can effectively realize load control and power management. Its on-resistance (R_DS(ON)) is 55mΩ at V_GS = 4.5V and 36mΩ at V_GS = 10V, with low conduction loss and good switching characteristics. The maximum drain current (I_D) of this MOSFET is -5.2A. It adopts **Trench** technology, has good electrical performance and high efficiency, and is suitable for various power management and load switching applications.
**SI6969DQ-T1-GE3-VB** is a dual P-channel power MOSFET in **TSSOP8** package, configured as **P+P-Channel** structure. This MOSFET has a maximum drain-source voltage (V_DS) of -30V, a gate-source voltage (V_GS) of ±20V, and a switching threshold voltage (V_th) of -1.7V, which can effectively realize load control and power management. Its on-resistance (R_DS(ON)) is 55mΩ at V_GS = 4.5V and 36mΩ at V_GS = 10V, with low conduction loss and good switching characteristics. The maximum drain current (I_D) of this MOSFET is -5.2A. It adopts **Trench** technology, has good electrical performance and high efficiency, and is suitable for various power management and load switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
Detailed parameter description:
- **Model**: SI6969DQ-T1-GE3-VB
- **Package**: TSSOP8
- **Configuration**: Dual P+P-Channel
- **Maximum drain-source voltage (V_DS)**: -30V
- **Gate-source voltage (V_GS)**: ±20V
- **Switching threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON)）**:
- 55mΩ @ V_GS = 4.5V
- 36mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: -5.2A
- **Technology**: Trench technology
- **Maximum power dissipation (P_D)**: 100W (depending on heat dissipation conditions)
- **Reverse recovery time**: Fast switching response for high frequency applications
- **Operating temperature range**: -55°C to +150°C
- **Gate charge (Qg)**: 16nC (V_GS = 4.5V)
- **Pin configuration**: TSSOP8 package for compact circuit design
- **Model**: SI6969DQ-T1-GE3-VB
- **Package**: TSSOP8
- **Configuration**: Dual P+P-Channel
- **Maximum drain-source voltage (V_DS)**: -30V
- **Gate-source voltage (V_GS)**: ±20V
- **Switching threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON)）**:
- 55mΩ @ V_GS = 4.5V
- 36mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: -5.2A
- **Technology**: Trench technology
- **Maximum power dissipation (P_D)**: 100W (depending on heat dissipation conditions)
- **Reverse recovery time**: Fast switching response for high frequency applications
- **Operating temperature range**: -55°C to +150°C
- **Gate charge (Qg)**: 16nC (V_GS = 4.5V)
- **Pin configuration**: TSSOP8 package for compact circuit design
Domain and module applications：
Application fields and module examples:
1. **Load switch and power management**:
**SI6969DQ-T1-GE3-VB** As a dual P-channel MOSFET, it performs well in load switching and power management applications. Its low on-resistance and excellent switching characteristics make it very suitable for battery-powered devices such as portable electronic devices, smart homes, and power control in automotive electronic systems. It is particularly suitable as an efficient switching element in battery management and battery charging circuits to ensure accurate regulation of battery voltage.
2. **Battery charger and battery management system**:
In the **battery management** system, the dual P-channel MOSFET can effectively control the battery charging process, prevent overcharging and over-discharging, and improve charging efficiency. Due to its low on-resistance characteristics, this MOSFET is widely used in battery charging systems of power tool chargers, smart phones, tablets and other devices to provide efficient power transmission.
3. **DC-DC converter**:
In **DC-DC converter**, dual P-channel MOSFET can be used as an efficient switching element, especially in low voltage and high efficiency applications. By reducing the on-resistance, MOSFET can minimize power loss and is widely used in various power modules, such as computer power supplies, LED driver power supplies, etc., to ensure efficient voltage conversion of the system.
4. **Electric vehicle charging system**:
**SI6969DQ-T1-GE3-VB** is suitable for **electric vehicle charging system**, acting as a switch and current control element in electric vehicle charging piles. The MOSFET can efficiently manage the current flow, ensuring that the battery is not overstressed during the charging process, thereby extending the battery life and improving the charging efficiency.
5. **LED drive and lighting control**:
In **LED driver power supply**, the low on-resistance MOSFET can effectively control the driving current of the LED lamp and improve efficiency. In smart lighting systems, commercial lighting and other lighting control modules, **SI6969DQ-T1-GE3-VB** can provide stable current and voltage control for LED modules, ensuring long life and high efficiency of lighting systems.
6. **Automotive electronic systems**:
**SI6969DQ-T1-GE3-VB** is also suitable for **automotive electronic systems**, especially in battery management and load control applications. In the power distribution, power system and battery management system of the car, it can provide reliable power switching and load control, support the efficient operation of automotive electronic equipment, reduce power consumption and extend service life.
1. **Load switch and power management**:
**SI6969DQ-T1-GE3-VB** As a dual P-channel MOSFET, it performs well in load switching and power management applications. Its low on-resistance and excellent switching characteristics make it very suitable for battery-powered devices such as portable electronic devices, smart homes, and power control in automotive electronic systems. It is particularly suitable as an efficient switching element in battery management and battery charging circuits to ensure accurate regulation of battery voltage.
2. **Battery charger and battery management system**:
In the **battery management** system, the dual P-channel MOSFET can effectively control the battery charging process, prevent overcharging and over-discharging, and improve charging efficiency. Due to its low on-resistance characteristics, this MOSFET is widely used in battery charging systems of power tool chargers, smart phones, tablets and other devices to provide efficient power transmission.
3. **DC-DC converter**:
In **DC-DC converter**, dual P-channel MOSFET can be used as an efficient switching element, especially in low voltage and high efficiency applications. By reducing the on-resistance, MOSFET can minimize power loss and is widely used in various power modules, such as computer power supplies, LED driver power supplies, etc., to ensure efficient voltage conversion of the system.
4. **Electric vehicle charging system**:
**SI6969DQ-T1-GE3-VB** is suitable for **electric vehicle charging system**, acting as a switch and current control element in electric vehicle charging piles. The MOSFET can efficiently manage the current flow, ensuring that the battery is not overstressed during the charging process, thereby extending the battery life and improving the charging efficiency.
5. **LED drive and lighting control**:
In **LED driver power supply**, the low on-resistance MOSFET can effectively control the driving current of the LED lamp and improve efficiency. In smart lighting systems, commercial lighting and other lighting control modules, **SI6969DQ-T1-GE3-VB** can provide stable current and voltage control for LED modules, ensuring long life and high efficiency of lighting systems.
6. **Automotive electronic systems**:
**SI6969DQ-T1-GE3-VB** is also suitable for **automotive electronic systems**, especially in battery management and load control applications. In the power distribution, power system and battery management system of the car, it can provide reliable power switching and load control, support the efficient operation of automotive electronic equipment, reduce power consumption and extend service life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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