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SI6969DQ-T1-E3-VB Product details
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Product Introduction
**SI6969DQ-T1-E3-VB** is a **tssop8** packaged **dual p-channel MOSFET**, designed with **trench technology**, with **low on-resistance (RDS(ON))**, suitable for high-efficiency power control and switching applications. The **maximum drain-source voltage (VDS)** of this model is **-30V**, and it can withstand higher load voltages. The **RDS(ON)** of this MOSFET is **55mΩ** at **VGS=4.5V**, and the on-resistance is further reduced to **36mΩ** at **VGS=10V**, showing excellent current conduction performance and low power loss. Its **maximum drain current (ID)** is **-5.2A**, which is very suitable for load switching and power management applications in low-voltage systems.
**SI6969DQ-T1-E3-VB** is a **tssop8** packaged **dual p-channel MOSFET**, designed with **trench technology**, with **low on-resistance (RDS(ON))**, suitable for high-efficiency power control and switching applications. The **maximum drain-source voltage (VDS)** of this model is **-30V**, and it can withstand higher load voltages. The **RDS(ON)** of this MOSFET is **55mΩ** at **VGS=4.5V**, and the on-resistance is further reduced to **36mΩ** at **VGS=10V**, showing excellent current conduction performance and low power loss. Its **maximum drain current (ID)** is **-5.2A**, which is very suitable for load switching and power management applications in low-voltage systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
Detailed parameter description
- **Model**: SI6969DQ-T1-E3-VB
- **Package type**: TSSOP8
- **Configuration**: Dual P channel
- **VDS (drain-source voltage)**: -30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: -1.7V
- **RDS(ON) on-resistance**:
- At **VGS=4.5V**: 55mΩ
- At **VGS=10V**: 36mΩ
- **ID (maximum drain current)**: -5.2A
- **Technology**: Trench (channel process)
- **Model**: SI6969DQ-T1-E3-VB
- **Package type**: TSSOP8
- **Configuration**: Dual P channel
- **VDS (drain-source voltage)**: -30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: -1.7V
- **RDS(ON) on-resistance**:
- At **VGS=4.5V**: 55mΩ
- At **VGS=10V**: 36mΩ
- **ID (maximum drain current)**: -5.2A
- **Technology**: Trench (channel process)
Domain and module applications：
Applications and module examples
1. **Battery Management System (BMS)**:
**SI6969DQ-T1-E3-VB**'s low **RDS(ON)** characteristics and **low gate voltage startup requirements** make it ideal for **Battery Management System (BMS)**, especially in **Battery charge and discharge control**. The MOSFET can operate stably at high currents and is very suitable for battery protection, overcurrent protection and other functions in **portable battery devices, power tools** and **electric vehicles**.
2. **DC-DC Converter**:
Due to its **low on-resistance**, this MOSFET performs well in **DC-DC converters** (such as **boost and buck converters**). The MOSFET can maintain low losses at high switching frequencies and is suitable for **power supplies**, **power management modules** or **embedded systems** to ensure stable current output and high-efficiency power conversion.
3. **Power Management and Switching Power Supply**:
In **power management systems**, **SI6969DQ-T1-E3-VB** can be used as a load switch to achieve efficient **power switching**. Its superior **RDS(ON)** value can reduce power loss and is suitable for **communication equipment, consumer electronic devices** and **embedded power modules**, improving system stability and operating efficiency.
4. **Load Switch Application**:
**SI6969DQ-T1-E3-VB** can be widely used in **load switches** to control the switching process of current, especially for **low voltage controlled load switching** (such as **low power electronic devices**, **portable devices**) and other scenarios with high requirements. Due to its low on-resistance, MOSFET can effectively reduce switching losses, extend the service life of equipment and improve work efficiency.
5. **Power switch**:
In **power switch applications**, **SI6969DQ-T1-E3-VB** can be used in **switching power supplies, LED driver circuits** and other fields to ensure stability under high current and high frequency conditions. It can operate in low voltage environments and provide good current control, which is very suitable for **intelligent power management, power amplifier power systems, and LED lighting systems**.
6. **Automotive electronics**:
In **automotive electronic systems**, **SI6969DQ-T1-E3-VB** can be used in **battery protection and power management modules**, which can ensure stable power supply in vehicle power systems, especially under high load conditions, and reduce heat generation through its low power loss characteristics. It is suitable for **electric vehicle charging systems** and **automotive battery management systems** to ensure efficient power conversion and management.
7. **Power tools and household appliances**:
In **power tools** or **household appliances**, MOSFET is used as **current control and load switching** to help improve power transmission efficiency, reduce unnecessary power loss, and improve the performance and durability of the equipment. It is particularly suitable for **low-power and high-efficiency electronic devices** such as **handheld power tools and kitchen appliances.
1. **Battery Management System (BMS)**:
**SI6969DQ-T1-E3-VB**'s low **RDS(ON)** characteristics and **low gate voltage startup requirements** make it ideal for **Battery Management System (BMS)**, especially in **Battery charge and discharge control**. The MOSFET can operate stably at high currents and is very suitable for battery protection, overcurrent protection and other functions in **portable battery devices, power tools** and **electric vehicles**.
2. **DC-DC Converter**:
Due to its **low on-resistance**, this MOSFET performs well in **DC-DC converters** (such as **boost and buck converters**). The MOSFET can maintain low losses at high switching frequencies and is suitable for **power supplies**, **power management modules** or **embedded systems** to ensure stable current output and high-efficiency power conversion.
3. **Power Management and Switching Power Supply**:
In **power management systems**, **SI6969DQ-T1-E3-VB** can be used as a load switch to achieve efficient **power switching**. Its superior **RDS(ON)** value can reduce power loss and is suitable for **communication equipment, consumer electronic devices** and **embedded power modules**, improving system stability and operating efficiency.
4. **Load Switch Application**:
**SI6969DQ-T1-E3-VB** can be widely used in **load switches** to control the switching process of current, especially for **low voltage controlled load switching** (such as **low power electronic devices**, **portable devices**) and other scenarios with high requirements. Due to its low on-resistance, MOSFET can effectively reduce switching losses, extend the service life of equipment and improve work efficiency.
5. **Power switch**:
In **power switch applications**, **SI6969DQ-T1-E3-VB** can be used in **switching power supplies, LED driver circuits** and other fields to ensure stability under high current and high frequency conditions. It can operate in low voltage environments and provide good current control, which is very suitable for **intelligent power management, power amplifier power systems, and LED lighting systems**.
6. **Automotive electronics**:
In **automotive electronic systems**, **SI6969DQ-T1-E3-VB** can be used in **battery protection and power management modules**, which can ensure stable power supply in vehicle power systems, especially under high load conditions, and reduce heat generation through its low power loss characteristics. It is suitable for **electric vehicle charging systems** and **automotive battery management systems** to ensure efficient power conversion and management.
7. **Power tools and household appliances**:
In **power tools** or **household appliances**, MOSFET is used as **current control and load switching** to help improve power transmission efficiency, reduce unnecessary power loss, and improve the performance and durability of the equipment. It is particularly suitable for **low-power and high-efficiency electronic devices** such as **handheld power tools and kitchen appliances.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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