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SI6969BDQ-T1-GE3-VB Product details
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Product Introduction: SI6969BDQ-T1-GE3-VB
SI6969BDQ-T1-GE3-VB is a dual P-type MOSFET (Dual-P+P-Channel) in TSSOP8 package. It has a drain-source voltage of 20V and a maximum drain current of 7.5A, and is designed for low-power, high-efficiency current switching applications. Using Trench technology, this MOSFET provides low on-resistance (RDS(ON)), which can maintain high efficiency performance at lower gate-source voltages, significantly reducing system power losses. Its threshold voltage (Vth) is -1.2V, which is suitable for occasions that require precise control of current flow and high-frequency switching. SI6969BDQ-T1-GE3-VB is particularly suitable for applications such as load switching, power management and battery drive.
SI6969BDQ-T1-GE3-VB is a dual P-type MOSFET (Dual-P+P-Channel) in TSSOP8 package. It has a drain-source voltage of 20V and a maximum drain current of 7.5A, and is designed for low-power, high-efficiency current switching applications. Using Trench technology, this MOSFET provides low on-resistance (RDS(ON)), which can maintain high efficiency performance at lower gate-source voltages, significantly reducing system power losses. Its threshold voltage (Vth) is -1.2V, which is suitable for occasions that require precise control of current flow and high-frequency switching. SI6969BDQ-T1-GE3-VB is particularly suitable for applications such as load switching, power management and battery drive.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | 13mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -20V | -1.2V | -7.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
Detailed parameter description:
- **Package type**: TSSOP8
- **Configuration**: Dual-P+P-Channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.2V
- **On-resistance (RDS(ON))**:
- VGS = 10V: 13mΩ
- VGS = 4.5V: 18mΩ
- **Maximum drain current (ID)**: -7.5A
- **Technology**: Trench technology
This MOSFET has excellent switching performance and low on-resistance at low gate voltage, which can reduce power loss during current switching and improve the efficiency of the overall system. Its lower threshold voltage (Vth) enables it to operate at a lower drive voltage, suitable for low-power applications.
- **Package type**: TSSOP8
- **Configuration**: Dual-P+P-Channel
- **Drain-source voltage (VDS)**: -20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.2V
- **On-resistance (RDS(ON))**:
- VGS = 10V: 13mΩ
- VGS = 4.5V: 18mΩ
- **Maximum drain current (ID)**: -7.5A
- **Technology**: Trench technology
This MOSFET has excellent switching performance and low on-resistance at low gate voltage, which can reduce power loss during current switching and improve the efficiency of the overall system. Its lower threshold voltage (Vth) enables it to operate at a lower drive voltage, suitable for low-power applications.
Domain and module applications：
Applications and modules:
1. **Load Switching and Power Switching**:
SI6969BDQ-T1-GE3-VB is very effective in load switching and power switching applications, especially where fast switching and low power loss are required. Its dual P-type configuration makes it very suitable for H-bridge circuits, bidirectional current control, and power switching in battery management systems. Its low on-resistance and high switching frequency response make it excellent in consumer electronics, battery-powered devices, and mobile devices.
2. **Battery Management System (BMS)**:
In the battery management system, SI6969BDQ-T1-GE3-VB acts as a current control switch, which can efficiently control the battery charging and discharging process to ensure the safety and long life of the battery. Especially in products that require precise battery management, such as power tools, electric vehicles, and smart home devices, this MOSFET can effectively improve the efficiency of the system and reduce losses and heat.
3. **Power Management and DC-DC Converters**:
In DC-DC converters and other power management systems, the low RDS(ON) and excellent switching performance of SI6969BDQ-T1-GE3-VB make it an ideal switching element. Its efficient current switching capability is suitable for various power modules, such as power adapters, LED drivers, and battery chargers, which can improve conversion efficiency, reduce power loss, and reduce heat generation.
4. **Motor Drive System**:
In motor control and drive systems, SI6969BDQ-T1-GE3-VB provides low on-resistance and fast switching capability, which is suitable for drive control of stepper motors, DC motors, and other motors. Especially in applications such as automation equipment, power tools, and electric toys, it can significantly improve the efficiency of the drive system and reduce power loss and heat generation.
5. **High-frequency switching power supply applications**:
SI6969BDQ-T1-GE3-VB is also suitable for applications that require high-frequency switching, such as solar inverters, reactive power compensation, communication power supplies, and computer power supplies. In these applications, MOSFETs can quickly switch currents, reduce switching losses, improve system efficiency, and reduce heat.
1. **Load Switching and Power Switching**:
SI6969BDQ-T1-GE3-VB is very effective in load switching and power switching applications, especially where fast switching and low power loss are required. Its dual P-type configuration makes it very suitable for H-bridge circuits, bidirectional current control, and power switching in battery management systems. Its low on-resistance and high switching frequency response make it excellent in consumer electronics, battery-powered devices, and mobile devices.
2. **Battery Management System (BMS)**:
In the battery management system, SI6969BDQ-T1-GE3-VB acts as a current control switch, which can efficiently control the battery charging and discharging process to ensure the safety and long life of the battery. Especially in products that require precise battery management, such as power tools, electric vehicles, and smart home devices, this MOSFET can effectively improve the efficiency of the system and reduce losses and heat.
3. **Power Management and DC-DC Converters**:
In DC-DC converters and other power management systems, the low RDS(ON) and excellent switching performance of SI6969BDQ-T1-GE3-VB make it an ideal switching element. Its efficient current switching capability is suitable for various power modules, such as power adapters, LED drivers, and battery chargers, which can improve conversion efficiency, reduce power loss, and reduce heat generation.
4. **Motor Drive System**:
In motor control and drive systems, SI6969BDQ-T1-GE3-VB provides low on-resistance and fast switching capability, which is suitable for drive control of stepper motors, DC motors, and other motors. Especially in applications such as automation equipment, power tools, and electric toys, it can significantly improve the efficiency of the drive system and reduce power loss and heat generation.
5. **High-frequency switching power supply applications**:
SI6969BDQ-T1-GE3-VB is also suitable for applications that require high-frequency switching, such as solar inverters, reactive power compensation, communication power supplies, and computer power supplies. In these applications, MOSFETs can quickly switch currents, reduce switching losses, improve system efficiency, and reduce heat.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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