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SI6968EADQ-T1-GE3-VB Product details
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SI6968EADQ-T1-GE3-VB Product Introduction
SI6968EADQ-T1-GE3-VB is a common drain N-type MOSFET in TSSOP8 package with two N-type channels, suitable for medium-power power management and switching circuits. This MOSFET adopts Trench technology to provide excellent electrical performance, especially in low-voltage, high-efficiency applications. Its maximum drain-source voltage (VDS) is 20V, the maximum gate-source voltage (VGS) is ±12V, and the threshold voltage (Vth) ranges from 0.5V to 1.5V, which is suitable for low-voltage drive systems. The on-resistance (RDS(ON)) of the MOSFET is very low, at 18mΩ (VGS = 2.5V) and 14mΩ (VGS = 4.5V), which can effectively reduce power loss and improve system efficiency. The maximum drain current (ID) is 7.6A, which is suitable for power supply and load switching applications in the medium power range.
SI6968EADQ-T1-GE3-VB is a common drain N-type MOSFET in TSSOP8 package with two N-type channels, suitable for medium-power power management and switching circuits. This MOSFET adopts Trench technology to provide excellent electrical performance, especially in low-voltage, high-efficiency applications. Its maximum drain-source voltage (VDS) is 20V, the maximum gate-source voltage (VGS) is ±12V, and the threshold voltage (Vth) ranges from 0.5V to 1.5V, which is suitable for low-voltage drive systems. The on-resistance (RDS(ON)) of the MOSFET is very low, at 18mΩ (VGS = 2.5V) and 14mΩ (VGS = 4.5V), which can effectively reduce power loss and improve system efficiency. The maximum drain current (ID) is 7.6A, which is suitable for power supply and load switching applications in the medium power range.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
| **Parameter** | **Value** |
|------------------------|---------------------------------|
| **Package** | TSSOP8 |
| **Configuration** | Common Drain N+N Channels|
| **Maximum Drain-Source Voltage (VDS)** | 20V |
| **Gate-Source Voltage (VGS)** | ±12V |
| **Threshold Voltage (Vth)** | 0.5V ~ 1.5V |
| **On-Resistance (RDS(ON))** | 18mΩ @ VGS = 2.5V |
| | 14mΩ @ VGS = 4.5V |
| **Maximum Drain Current (ID)** | 7.6A |
| **Technology** | Trench |
| **Parameter** | **Value** |
|------------------------|---------------------------------|
| **Package** | TSSOP8 |
| **Configuration** | Common Drain N+N Channels|
| **Maximum Drain-Source Voltage (VDS)** | 20V |
| **Gate-Source Voltage (VGS)** | ±12V |
| **Threshold Voltage (Vth)** | 0.5V ~ 1.5V |
| **On-Resistance (RDS(ON))** | 18mΩ @ VGS = 2.5V |
| | 14mΩ @ VGS = 4.5V |
| **Maximum Drain Current (ID)** | 7.6A |
| **Technology** | Trench |
Domain and module applications：
Applicable fields and modules
1. **DC-DC converter**:
SI6968EADQ-T1-GE3-VB is widely used in DC-DC converters, especially in power management systems in the low to medium voltage range. Due to its low RDS(ON) and high current carrying capacity, this MOSFET can reduce power loss while improving system conversion efficiency, and is suitable for power conversion designs of portable devices, industrial power supplies, and consumer electronic devices.
2. **Load switch application**:
Due to its excellent switching characteristics, SI6968EADQ-T1-GE3-VB is suitable for various load switching circuits. In load switching and current control applications, MOSFET can provide precise switching operation, reduce power loss, and improve system efficiency. This MOSFET is an ideal choice for efficient power management and load switching circuits.
3. **Battery Management System (BMS)**:
In the battery management system (BMS), SI6968EADQ-T1-GE3-VB can be used for battery charge and discharge management, overcurrent protection and battery balancing. Due to its low on-resistance and high current carrying capacity, this MOSFET helps improve the efficiency of the battery management system, extend battery life and ensure system stability.
4. **Power Adapter and Charger**:
As a switching element in power adapters and chargers, SI6968EADQ-T1-GE3-VB performs well in high-speed switching and efficient power conversion. This MOSFET can reduce power loss during switching and improve the overall efficiency of power adapters and chargers, especially in applications with high efficiency requirements, such as laptop battery charging and charging management of portable devices.
5. **Power Factor Correction (PFC) Circuit**:
SI6968EADQ-T1-GE3-VB can improve the conversion efficiency of power supply in power factor correction (PFC) circuit. Its low RDS(ON) and high current handling capability can effectively reduce losses and ensure that the PFC circuit provides high efficiency performance over a wide load range. It is suitable for use in industrial power supplies, home appliances, computer power supplies and other equipment.
6. **Inverter and Solar Photovoltaic System**:
In solar photovoltaic systems, SI6968EADQ-T1-GE3-VB can be used as a key switching element in the inverter. Its low on-resistance and high current carrying capacity enable it to efficiently convert solar energy into electrical energy and transmit it to the grid or load, and is widely used in power conversion and load regulation of solar photovoltaic systems.
7. **Electric Vehicles (EV) and Automotive Electronics**:
In electric vehicles (EV) and their charging systems, SI6968EADQ-T1-GE3-VB can be used for battery voltage management, charging control, and motor drive modules. Its high current carrying capacity and low on-resistance make it suitable for efficient power management, charging control, and power systems in electric vehicles.
1. **DC-DC converter**:
SI6968EADQ-T1-GE3-VB is widely used in DC-DC converters, especially in power management systems in the low to medium voltage range. Due to its low RDS(ON) and high current carrying capacity, this MOSFET can reduce power loss while improving system conversion efficiency, and is suitable for power conversion designs of portable devices, industrial power supplies, and consumer electronic devices.
2. **Load switch application**:
Due to its excellent switching characteristics, SI6968EADQ-T1-GE3-VB is suitable for various load switching circuits. In load switching and current control applications, MOSFET can provide precise switching operation, reduce power loss, and improve system efficiency. This MOSFET is an ideal choice for efficient power management and load switching circuits.
3. **Battery Management System (BMS)**:
In the battery management system (BMS), SI6968EADQ-T1-GE3-VB can be used for battery charge and discharge management, overcurrent protection and battery balancing. Due to its low on-resistance and high current carrying capacity, this MOSFET helps improve the efficiency of the battery management system, extend battery life and ensure system stability.
4. **Power Adapter and Charger**:
As a switching element in power adapters and chargers, SI6968EADQ-T1-GE3-VB performs well in high-speed switching and efficient power conversion. This MOSFET can reduce power loss during switching and improve the overall efficiency of power adapters and chargers, especially in applications with high efficiency requirements, such as laptop battery charging and charging management of portable devices.
5. **Power Factor Correction (PFC) Circuit**:
SI6968EADQ-T1-GE3-VB can improve the conversion efficiency of power supply in power factor correction (PFC) circuit. Its low RDS(ON) and high current handling capability can effectively reduce losses and ensure that the PFC circuit provides high efficiency performance over a wide load range. It is suitable for use in industrial power supplies, home appliances, computer power supplies and other equipment.
6. **Inverter and Solar Photovoltaic System**:
In solar photovoltaic systems, SI6968EADQ-T1-GE3-VB can be used as a key switching element in the inverter. Its low on-resistance and high current carrying capacity enable it to efficiently convert solar energy into electrical energy and transmit it to the grid or load, and is widely used in power conversion and load regulation of solar photovoltaic systems.
7. **Electric Vehicles (EV) and Automotive Electronics**:
In electric vehicles (EV) and their charging systems, SI6968EADQ-T1-GE3-VB can be used for battery voltage management, charging control, and motor drive modules. Its high current carrying capacity and low on-resistance make it suitable for efficient power management, charging control, and power systems in electric vehicles.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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