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SI6968DQ-T1-GE3-VB Product details
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1. Product Introduction - SI6968DQ-T1-GE3-VB
SI6968DQ-T1-GE3-VB is an N-channel MOSFET based on Trench technology with low RDS(on) and high current carrying capability, which is particularly suitable for low voltage applications. Its package type is TSSOP8, configured as Common Drain-N+N-Channel, and can support drain-source voltage (VDS) up to 20V. The gate drive voltage (VGS) of this MOSFET can reach ±12V, and the operating threshold voltage (Vth) ranges from 0.5V to 1.5V. Its low RDS(on) value of 18mΩ at 2.5V drive and 14mΩ at 4.5V drive makes it perform well in high-performance applications. The maximum continuous current (ID) is 7.6A, which is suitable for various high-performance and low-power design requirements.
SI6968DQ-T1-GE3-VB is an N-channel MOSFET based on Trench technology with low RDS(on) and high current carrying capability, which is particularly suitable for low voltage applications. Its package type is TSSOP8, configured as Common Drain-N+N-Channel, and can support drain-source voltage (VDS) up to 20V. The gate drive voltage (VGS) of this MOSFET can reach ±12V, and the operating threshold voltage (Vth) ranges from 0.5V to 1.5V. Its low RDS(on) value of 18mΩ at 2.5V drive and 14mΩ at 4.5V drive makes it perform well in high-performance applications. The maximum continuous current (ID) is 7.6A, which is suitable for various high-performance and low-power design requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
2. Detailed parameter description
- **Model**: SI6968DQ-T1-GE3-VB
- **Package type**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Operation threshold voltage (Vth)**: 0.5V to 1.5V
- **RDS(on)**:
- 18mΩ@VGS = 2.5V
- 14mΩ@VGS = 4.5V
- **Maximum current (ID)**: 7.6A
- **Technology**: Trench
- **Application areas**: high-efficiency power supplies, switching power supplies, low voltage load drive, battery-powered equipment, mobile devices, automotive electronics, etc.
- **Model**: SI6968DQ-T1-GE3-VB
- **Package type**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±12V
- **Operation threshold voltage (Vth)**: 0.5V to 1.5V
- **RDS(on)**:
- 18mΩ@VGS = 2.5V
- 14mΩ@VGS = 4.5V
- **Maximum current (ID)**: 7.6A
- **Technology**: Trench
- **Application areas**: high-efficiency power supplies, switching power supplies, low voltage load drive, battery-powered equipment, mobile devices, automotive electronics, etc.
Domain and module applications：
3. Applications and module examples
1. **Battery-driven devices**:
Due to the low RDS(on) characteristics of SI6968DQ-T1-GE3-VB, it is very suitable for battery-driven applications such as mobile devices or portable devices. In these devices, MOSFET can provide efficient current control and extend battery life.
2. **Switching power supply module**:
In switching power supplies (SMPS), MOSFET can be used for high-frequency switching operations, especially under low voltage and high current conditions. SI6968DQ-T1-GE3-VB can provide reliable support in the input and output current control of switching power supplies due to its efficient conduction performance and low power consumption characteristics, reduce switching losses, and improve overall efficiency.
3. **Power tools and drive systems**:
For power tools and electric drive systems, SI6968DQ-T1-GE3-VB provides efficient power conversion and load driving functions in the drive system with its excellent current carrying capacity and low RDS(on) characteristics, especially suitable for applications in high current and low voltage environments.
4. **Automotive electronics**:
In automotive electronic systems, MOSFET can be used in electric power steering, battery management systems, and various control modules. SI6968DQ-T1-GE3-VB's low on-resistance and high current carrying capacity make it more adaptable in electric vehicles and traditional automotive electronic systems, which can improve energy efficiency and reduce heat loss.
5. **Electric toys and small robots**:
Due to its high current carrying capacity of 7.6A and low gate voltage requirement, SI6968DQ-T1-GE3-VB is very suitable for small robots or electric toys to ensure efficient motor drive and extend the use time.
The above is a detailed parameter analysis and application field description for SI6968DQ-T1-GE3-VB MOSFET, which is suitable for various high-efficiency power management and load drive systems.
1. **Battery-driven devices**:
Due to the low RDS(on) characteristics of SI6968DQ-T1-GE3-VB, it is very suitable for battery-driven applications such as mobile devices or portable devices. In these devices, MOSFET can provide efficient current control and extend battery life.
2. **Switching power supply module**:
In switching power supplies (SMPS), MOSFET can be used for high-frequency switching operations, especially under low voltage and high current conditions. SI6968DQ-T1-GE3-VB can provide reliable support in the input and output current control of switching power supplies due to its efficient conduction performance and low power consumption characteristics, reduce switching losses, and improve overall efficiency.
3. **Power tools and drive systems**:
For power tools and electric drive systems, SI6968DQ-T1-GE3-VB provides efficient power conversion and load driving functions in the drive system with its excellent current carrying capacity and low RDS(on) characteristics, especially suitable for applications in high current and low voltage environments.
4. **Automotive electronics**:
In automotive electronic systems, MOSFET can be used in electric power steering, battery management systems, and various control modules. SI6968DQ-T1-GE3-VB's low on-resistance and high current carrying capacity make it more adaptable in electric vehicles and traditional automotive electronic systems, which can improve energy efficiency and reduce heat loss.
5. **Electric toys and small robots**:
Due to its high current carrying capacity of 7.6A and low gate voltage requirement, SI6968DQ-T1-GE3-VB is very suitable for small robots or electric toys to ensure efficient motor drive and extend the use time.
The above is a detailed parameter analysis and application field description for SI6968DQ-T1-GE3-VB MOSFET, which is suitable for various high-efficiency power management and load drive systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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