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SI6966EDQ-T1-GE3-VB Product details
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Product Introduction - SI6966EDQ-T1-GE3-VB
SI6966EDQ-T1-GE3-VB is a high-efficiency, low on-resistance dual MOSFET in TSSOP8 package with N+N channel common source configuration, suitable for a variety of low-voltage, high-efficiency power management and load switching applications. Its design adopts advanced Trench technology, which can achieve high performance at a lower drive voltage, and is very suitable for DC-DC converters, battery-powered devices and other occasions requiring efficient current control.
This model has a VDS of 20V, a VGS of ±20V, and a threshold voltage (Vth) range of 0.5V to 1.5V, which can adapt to a variety of different driving conditions. RDS(ON) is 32mΩ at VGS=2.5V and 22mΩ at VGS=4.5V, respectively, ensuring low power consumption and high current carrying capacity, and the maximum ID (drain current) can reach 6.6A. SI6966EDQ-T1-GE3-VB is very suitable for high-efficiency, energy-saving and miniaturized power supply systems.
SI6966EDQ-T1-GE3-VB is a high-efficiency, low on-resistance dual MOSFET in TSSOP8 package with N+N channel common source configuration, suitable for a variety of low-voltage, high-efficiency power management and load switching applications. Its design adopts advanced Trench technology, which can achieve high performance at a lower drive voltage, and is very suitable for DC-DC converters, battery-powered devices and other occasions requiring efficient current control.
This model has a VDS of 20V, a VGS of ±20V, and a threshold voltage (Vth) range of 0.5V to 1.5V, which can adapt to a variety of different driving conditions. RDS(ON) is 32mΩ at VGS=2.5V and 22mΩ at VGS=4.5V, respectively, ensuring low power consumption and high current carrying capacity, and the maximum ID (drain current) can reach 6.6A. SI6966EDQ-T1-GE3-VB is very suitable for high-efficiency, energy-saving and miniaturized power supply systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
- **Package**: TSSOP8
- **Configuration**: Common source N+N channel
- **VDS (drain-source voltage)**: 20V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 0.5V ~ 1.5V
- **RDS(ON)**:
- 32mΩ@VGS = 2.5V
- 22mΩ@VGS = 4.5V
- **ID (drain current)**: 6.6A
- **Technology**: Trench
- **Maximum power consumption**: Not provided (depends on the specific operating environment and cooling conditions)
- **Operating temperature range**: Typically -40°C to +150°C
- **Package**: TSSOP8
- **Configuration**: Common source N+N channel
- **VDS (drain-source voltage)**: 20V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: 0.5V ~ 1.5V
- **RDS(ON)**:
- 32mΩ@VGS = 2.5V
- 22mΩ@VGS = 4.5V
- **ID (drain current)**: 6.6A
- **Technology**: Trench
- **Maximum power consumption**: Not provided (depends on the specific operating environment and cooling conditions)
- **Operating temperature range**: Typically -40°C to +150°C
Domain and module applications：
Applications and module examples
1. **DC-DC converters and power management modules**
SI6966EDQ-T1-GE3-VB is widely used in DC-DC converters, especially in applications that require high efficiency and low loss. The low RDS(ON) and high drain current carrying capacity of this MOSFET enable it to provide higher efficiency in power modules, especially suitable for use in power adapters, switching power supplies, and battery-powered devices. It can reduce energy loss and heat while improving conversion efficiency.
2. **Battery management and portable devices**
In battery-powered portable devices, SI6966EDQ-T1-GE3-VB can efficiently control current flow, optimize battery energy usage, and extend battery life. Due to its low on-resistance, this MOSFET can reduce battery current loss and effectively improve the efficiency of the entire battery management system. It is widely used in consumer electronics such as smartphones, laptops, and wireless headphones.
3. **Load switch and current limiting applications**
In load switch and current protection circuits, SI6966EDQ-T1-GE3-VB can provide efficient switch control with low power consumption and high reliability, and is suitable for power tools, home appliance power switches, and low voltage protection circuits. Its low RDS(ON) and large current carrying capacity ensure that no excessive heat is generated during high-frequency switching, keeping the system stable.
4. **Electric vehicles and power tools**
In the power management system of power tools and electric vehicles, SI6966EDQ-T1-GE3-VB can also provide efficient current control and power conversion to optimize overall energy efficiency. It is suitable for battery management and power systems of power tools, and through its excellent current carrying capacity and high efficiency, it helps reduce power consumption and ensure long-term operation of the system.
5. **Communication equipment power supply system**
In the power supply system of wireless communication base stations, routers and other communication equipment, SI6966EDQ-T1-GE3-VB ensures stable power supply through its efficient power conversion capability to meet the needs of high-frequency switching and load changes. This MOSFET can help improve the reliability and efficiency of the power supply system, especially in environments that require long-term continuous operation.
In summary, SI6966EDQ-T1-GE3-VB is suitable for a variety of high-efficiency power management and conversion fields. With its low on-resistance and good thermal performance, it provides an ideal solution in applications in multiple industries.
1. **DC-DC converters and power management modules**
SI6966EDQ-T1-GE3-VB is widely used in DC-DC converters, especially in applications that require high efficiency and low loss. The low RDS(ON) and high drain current carrying capacity of this MOSFET enable it to provide higher efficiency in power modules, especially suitable for use in power adapters, switching power supplies, and battery-powered devices. It can reduce energy loss and heat while improving conversion efficiency.
2. **Battery management and portable devices**
In battery-powered portable devices, SI6966EDQ-T1-GE3-VB can efficiently control current flow, optimize battery energy usage, and extend battery life. Due to its low on-resistance, this MOSFET can reduce battery current loss and effectively improve the efficiency of the entire battery management system. It is widely used in consumer electronics such as smartphones, laptops, and wireless headphones.
3. **Load switch and current limiting applications**
In load switch and current protection circuits, SI6966EDQ-T1-GE3-VB can provide efficient switch control with low power consumption and high reliability, and is suitable for power tools, home appliance power switches, and low voltage protection circuits. Its low RDS(ON) and large current carrying capacity ensure that no excessive heat is generated during high-frequency switching, keeping the system stable.
4. **Electric vehicles and power tools**
In the power management system of power tools and electric vehicles, SI6966EDQ-T1-GE3-VB can also provide efficient current control and power conversion to optimize overall energy efficiency. It is suitable for battery management and power systems of power tools, and through its excellent current carrying capacity and high efficiency, it helps reduce power consumption and ensure long-term operation of the system.
5. **Communication equipment power supply system**
In the power supply system of wireless communication base stations, routers and other communication equipment, SI6966EDQ-T1-GE3-VB ensures stable power supply through its efficient power conversion capability to meet the needs of high-frequency switching and load changes. This MOSFET can help improve the reliability and efficiency of the power supply system, especially in environments that require long-term continuous operation.
In summary, SI6966EDQ-T1-GE3-VB is suitable for a variety of high-efficiency power management and conversion fields. With its low on-resistance and good thermal performance, it provides an ideal solution in applications in multiple industries.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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