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SI6963BDQ-T1-GE3-VB Product details

Product introduction:

SI6963BDQ-T1-GE3-VB Product Introduction

**SI6963BDQ-T1-GE3-VB** is a bipolar field effect transistor (Dual P-Channel MOSFET) with TSSOP-8 package and high-efficiency Trench technology, designed for low-voltage, high-efficiency power switching applications. This model has a dual P-Channel configuration and is suitable for various applications in power management and power conversion. It supports a maximum operating voltage of -30V, can provide low on-resistance (R_DS(on)), and has a high current carrying capacity with a maximum drain current of -5.2A. Its low R_DS(on) provides higher switching efficiency, reduces heat generation in the system, and improves the overall efficiency of the power supply.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TSSOP8 Dual-P+P -30V -1.7V -5.2A 36mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TSSOP8 Dual-P+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TSSOP8 Dual-P+P -30V -1.7V -5.2A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TSSOP8 Dual-P+P -30V -1.7V -5.2A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TSSOP8 Dual-P+P
Detailed parameter description

- **Package**: TSSOP8
- **Configuration**: Dual P-Channel MOSFET (Dual-P+P-Channel)
- **V_DS (drain to source voltage)**: -30V
- **V_GS (gate to source voltage)**: ±20V
- **V_th (gate threshold voltage)**: -1.7V
- **R_DS(on) (on-resistance)**:
- 55mΩ @ V_GS = 4.5V
- 36mΩ @ V_GS = 10V
- **I_D (drain current)**: -5.2A
- **Technology**: Trench technology
- **Operating temperature range**: -40°C to 125°C
- **Application areas**: power management, DC-DC conversion, battery management, etc.

Domain and module applications:

Applications and Modules

**SI6963BDQ-T1-GE3-VB** is suitable for various power management applications that require high efficiency, high switching frequency and low heat generation. Here are some specific application areas and modules:

1. **DC-DC Converter**:
- Due to its low R_DS(on) and high current carrying capacity, SI6963BDQ-T1-GE3-VB is an ideal choice in DC-DC converters, especially for voltage regulator modules (VRM) and battery-powered systems. Its high efficiency characteristics help reduce energy loss and heat dissipation, improving the overall performance of the system.

2. **Battery Management System (BMS)**:
- Suitable for lithium battery management and charging management systems. The low on-resistance of the MOSFET ensures low power loss during battery charging, improving charging efficiency and battery life.

3. **Power Supply System**:
- In high-efficiency power supply systems, SI6963BDQ-T1-GE3-VB can be used for load switches, regulators or power rail switching applications. Its high switching speed and low power consumption make it particularly suitable for intelligent power supply systems, reducing system temperature rise and improving overall energy efficiency.

4. **Electric Vehicles and Green Energy**:
- In electric vehicle battery drive systems, solar inverters and other green energy applications, this model MOSFET can provide stable and reliable current switching to ensure efficient energy conversion.

5. **Power Conversion Module**:
- SI6963BDQ-T1-GE3-VB is suitable for low-side switches in various power conversion modules (such as AC-DC, DC-AC converters, etc.) to provide smooth current output to the load.

Through these applications, SI6963BDQ-T1-GE3-VB can optimize power supply design, reduce system heat generation, and improve overall system efficiency and reliability.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours

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