SI6963BDQ-T1-GE3-VB Product details
Product introduction:
**SI6963BDQ-T1-GE3-VB** is a bipolar field effect transistor (Dual P-Channel MOSFET) with TSSOP-8 package and high-efficiency Trench technology, designed for low-voltage, high-efficiency power switching applications. This model has a dual P-Channel configuration and is suitable for various applications in power management and power conversion. It supports a maximum operating voltage of -30V, can provide low on-resistance (R_DS(on)), and has a high current carrying capacity with a maximum drain current of -5.2A. Its low R_DS(on) provides higher switching efficiency, reduces heat generation in the system, and improves the overall efficiency of the power supply.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
- **Package**: TSSOP8
- **Configuration**: Dual P-Channel MOSFET (Dual-P+P-Channel)
- **V_DS (drain to source voltage)**: -30V
- **V_GS (gate to source voltage)**: ±20V
- **V_th (gate threshold voltage)**: -1.7V
- **R_DS(on) (on-resistance)**:
- 55mΩ @ V_GS = 4.5V
- 36mΩ @ V_GS = 10V
- **I_D (drain current)**: -5.2A
- **Technology**: Trench technology
- **Operating temperature range**: -40°C to 125°C
- **Application areas**: power management, DC-DC conversion, battery management, etc.
Domain and module applications:
**SI6963BDQ-T1-GE3-VB** is suitable for various power management applications that require high efficiency, high switching frequency and low heat generation. Here are some specific application areas and modules:
1. **DC-DC Converter**:
- Due to its low R_DS(on) and high current carrying capacity, SI6963BDQ-T1-GE3-VB is an ideal choice in DC-DC converters, especially for voltage regulator modules (VRM) and battery-powered systems. Its high efficiency characteristics help reduce energy loss and heat dissipation, improving the overall performance of the system.
2. **Battery Management System (BMS)**:
- Suitable for lithium battery management and charging management systems. The low on-resistance of the MOSFET ensures low power loss during battery charging, improving charging efficiency and battery life.
3. **Power Supply System**:
- In high-efficiency power supply systems, SI6963BDQ-T1-GE3-VB can be used for load switches, regulators or power rail switching applications. Its high switching speed and low power consumption make it particularly suitable for intelligent power supply systems, reducing system temperature rise and improving overall energy efficiency.
4. **Electric Vehicles and Green Energy**:
- In electric vehicle battery drive systems, solar inverters and other green energy applications, this model MOSFET can provide stable and reliable current switching to ensure efficient energy conversion.
5. **Power Conversion Module**:
- SI6963BDQ-T1-GE3-VB is suitable for low-side switches in various power conversion modules (such as AC-DC, DC-AC converters, etc.) to provide smooth current output to the load.
Through these applications, SI6963BDQ-T1-GE3-VB can optimize power supply design, reduce system heat generation, and improve overall system efficiency and reliability.
Technical support:
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