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SI6955DQ-T1-GE3-VB Product details
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**SI6955DQ-T1-GE3-VB MOSFET Product Introduction**
**Model**: SI6955DQ-T1-GE3-VB
**Package Type**: TSSOP8
**Configuration**: Dual-P+P-Channel
**Technology**: Trench
**Maximum Drain-Source Voltage (VDS)**: -30V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: -1.7V
**On-Resistance (RDS(ON))**:
- **55mΩ** @VGS=4.5V
- **36mΩ** @VGS=10V
**Maximum Drain Current (ID)**: -5.2A
SI6955DQ-T1-GE3-VB is a low voltage, dual P+P-channel MOSFET based on Trench technology, packaged in TSSOP8, specially designed for efficient current control and low power consumption power management. It has low on-resistance and high current carrying capacity, and is very suitable for use in load switching, current control and power management circuits, especially in applications requiring reverse current flow, such as load switching, overcurrent protection and bidirectional current flow systems.
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**Model**: SI6955DQ-T1-GE3-VB
**Package Type**: TSSOP8
**Configuration**: Dual-P+P-Channel
**Technology**: Trench
**Maximum Drain-Source Voltage (VDS)**: -30V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: -1.7V
**On-Resistance (RDS(ON))**:
- **55mΩ** @VGS=4.5V
- **36mΩ** @VGS=10V
**Maximum Drain Current (ID)**: -5.2A
SI6955DQ-T1-GE3-VB is a low voltage, dual P+P-channel MOSFET based on Trench technology, packaged in TSSOP8, specially designed for efficient current control and low power consumption power management. It has low on-resistance and high current carrying capacity, and is very suitable for use in load switching, current control and power management circuits, especially in applications requiring reverse current flow, such as load switching, overcurrent protection and bidirectional current flow systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
**SI6955DQ-T1-GE3-VB MOSFET Detailed Parameter Description**
- **Package Type**: TSSOP8
- Using TSSOP8 package, it is suitable for use in space-constrained applications, can achieve high integration, and has good heat dissipation performance.
- **Configuration**: Dual-P+P-Channel
- The dual P+P-structure provides higher flexibility and can effectively support positive and negative current flow in some applications that require bidirectional control or reverse current flow. Common applications include reverse protection and bidirectional current switching.
- **VDS (drain-source voltage)**: -30V
- Supports a maximum drain-source voltage of -30V, suitable for low-voltage systems such as low-voltage power management and battery-powered devices.
- **VGS (gate-source voltage)**: ±20V
- Supports a wider gate voltage range, providing higher control flexibility and can adapt to different gate drive voltage conditions.
- **Vth (threshold voltage)**: -1.7V
- The lower threshold voltage allows the MOSFET to turn on at a lower gate voltage, increasing the switching speed and making it suitable for low-voltage operating systems.
- **RDS(ON)** (on-resistance):
- **55mΩ** @VGS=4.5V
- **36mΩ** @VGS=10V
- The lower on-resistance can effectively reduce power loss during switching and improve system efficiency.
- **ID (drain current)**: -5.2A
- The maximum drain current is -5.2A, which is suitable for medium current load applications and can meet the needs of some power switches and load control modules.
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- **Package Type**: TSSOP8
- Using TSSOP8 package, it is suitable for use in space-constrained applications, can achieve high integration, and has good heat dissipation performance.
- **Configuration**: Dual-P+P-Channel
- The dual P+P-structure provides higher flexibility and can effectively support positive and negative current flow in some applications that require bidirectional control or reverse current flow. Common applications include reverse protection and bidirectional current switching.
- **VDS (drain-source voltage)**: -30V
- Supports a maximum drain-source voltage of -30V, suitable for low-voltage systems such as low-voltage power management and battery-powered devices.
- **VGS (gate-source voltage)**: ±20V
- Supports a wider gate voltage range, providing higher control flexibility and can adapt to different gate drive voltage conditions.
- **Vth (threshold voltage)**: -1.7V
- The lower threshold voltage allows the MOSFET to turn on at a lower gate voltage, increasing the switching speed and making it suitable for low-voltage operating systems.
- **RDS(ON)** (on-resistance):
- **55mΩ** @VGS=4.5V
- **36mΩ** @VGS=10V
- The lower on-resistance can effectively reduce power loss during switching and improve system efficiency.
- **ID (drain current)**: -5.2A
- The maximum drain current is -5.2A, which is suitable for medium current load applications and can meet the needs of some power switches and load control modules.
---
Domain and module applications：
**SI6955DQ-T1-GE3-VB MOSFET Applications and Modules**
1. **Load Switching and Current Control**:
SI6955DQ-T1-GE3-VB is suitable for various load switching applications, especially where reverse current flow or bidirectional control is required. For example, it can be used to switch loads between different voltage sources or battery modules to ensure accurate control and safe disconnection of current.
2. **Power Management System**:
In power management systems, SI6955DQ-T1-GE3-VB can be used for switching load power supplies, especially in applications that require efficient power management. Its low RDS(ON) and high current carrying capacity make it very suitable for use as an efficient switching element to improve power conversion efficiency.
3. **Battery Management System (BMS)**:
In battery management systems, this MOSFET can be used for battery overcharge protection, current limiting, and load switching. Its high efficiency helps reduce battery loss and improve battery life, and it can accurately control current flow to ensure safe operation of the system.
4. **Communication equipment**:
In some communication equipment (such as routers, switches, etc.), SI6955DQ-T1-GE3-VB can be used as a switching element in circuits such as power switching, overcurrent protection or reverse current protection. Due to its low on-resistance, it helps reduce energy loss and improve equipment operation efficiency.
5. **Automotive electronic systems**:
In automotive power management and load switching systems, SI6955DQ-T1-GE3-VB can also provide excellent performance. It can be used in applications such as switching of automotive batteries, on-board load management, and bidirectional current flow control to help improve the power management efficiency and reliability of automotive electronic systems.
6. **Consumer electronics**:
In portable consumer electronic devices, SI6955DQ-T1-GE3-VB is often used in modules such as power switching, current control and overcurrent protection, and is especially suitable for mobile devices that require high performance and long battery life. Its low on-resistance can reduce system power loss and extend battery life.
7. **Solar panels and energy management**:
In solar panels or other renewable energy management systems, SI6955DQ-T1-GE3-VB can be used as a battery charge and discharge control and current switching module to help achieve bidirectional current flow and efficient energy conversion. This makes it play an important role in solar systems, especially in applications that require reverse current flow.
1. **Load Switching and Current Control**:
SI6955DQ-T1-GE3-VB is suitable for various load switching applications, especially where reverse current flow or bidirectional control is required. For example, it can be used to switch loads between different voltage sources or battery modules to ensure accurate control and safe disconnection of current.
2. **Power Management System**:
In power management systems, SI6955DQ-T1-GE3-VB can be used for switching load power supplies, especially in applications that require efficient power management. Its low RDS(ON) and high current carrying capacity make it very suitable for use as an efficient switching element to improve power conversion efficiency.
3. **Battery Management System (BMS)**:
In battery management systems, this MOSFET can be used for battery overcharge protection, current limiting, and load switching. Its high efficiency helps reduce battery loss and improve battery life, and it can accurately control current flow to ensure safe operation of the system.
4. **Communication equipment**:
In some communication equipment (such as routers, switches, etc.), SI6955DQ-T1-GE3-VB can be used as a switching element in circuits such as power switching, overcurrent protection or reverse current protection. Due to its low on-resistance, it helps reduce energy loss and improve equipment operation efficiency.
5. **Automotive electronic systems**:
In automotive power management and load switching systems, SI6955DQ-T1-GE3-VB can also provide excellent performance. It can be used in applications such as switching of automotive batteries, on-board load management, and bidirectional current flow control to help improve the power management efficiency and reliability of automotive electronic systems.
6. **Consumer electronics**:
In portable consumer electronic devices, SI6955DQ-T1-GE3-VB is often used in modules such as power switching, current control and overcurrent protection, and is especially suitable for mobile devices that require high performance and long battery life. Its low on-resistance can reduce system power loss and extend battery life.
7. **Solar panels and energy management**:
In solar panels or other renewable energy management systems, SI6955DQ-T1-GE3-VB can be used as a battery charge and discharge control and current switching module to help achieve bidirectional current flow and efficient energy conversion. This makes it play an important role in solar systems, especially in applications that require reverse current flow.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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