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SI6955DQ-T1-E3-VB Product details
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Product Introduction:
**SI6955DQ-T1-E3-VB** is a dual P-channel power MOSFET in **TSSOP8** package, configured as **P+P-Channel** structure, designed for low voltage, high efficiency power conversion applications. This MOSFET has a maximum drain-source voltage (V_DS) of -30V, a gate-source voltage (V_GS) of ±20V, and a switching threshold voltage (V_th) of -1.7V. Its on-resistance (R_DS(ON)) is 55mΩ at V_GS = 4.5V and 36mΩ at V_GS = 10V. It has low conduction loss and excellent switching characteristics, and its maximum drain current (I_D) is -5.2A, which is suitable for applications requiring efficient power management and load control. Using **Trench** technology, SI6955DQ-T1-E3-VB provides stable electrical performance and reliability, and is widely used in power management, load switching, switching power supplies and other fields.
**SI6955DQ-T1-E3-VB** is a dual P-channel power MOSFET in **TSSOP8** package, configured as **P+P-Channel** structure, designed for low voltage, high efficiency power conversion applications. This MOSFET has a maximum drain-source voltage (V_DS) of -30V, a gate-source voltage (V_GS) of ±20V, and a switching threshold voltage (V_th) of -1.7V. Its on-resistance (R_DS(ON)) is 55mΩ at V_GS = 4.5V and 36mΩ at V_GS = 10V. It has low conduction loss and excellent switching characteristics, and its maximum drain current (I_D) is -5.2A, which is suitable for applications requiring efficient power management and load control. Using **Trench** technology, SI6955DQ-T1-E3-VB provides stable electrical performance and reliability, and is widely used in power management, load switching, switching power supplies and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
Detailed parameter description:
- **Model**: SI6955DQ-T1-E3-VB
- **Package**: TSSOP8
- **Configuration**: Dual P-channel (Dual P+P-Channel)
- **Maximum drain-source voltage (V_DS)**: -30V
- **Gate-source voltage (V_GS)**: ±20V
- **Switching threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON)）**:
- 55mΩ @ V_GS = 4.5V
- 36mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: -5.2A
- **Technology**: Trench technology
- **Maximum power dissipation (P_D)**: 100W (depending on heat dissipation conditions)
- **Reverse recovery time**: Fast switching response for high frequency applications
- **Operating temperature range**: -55°C to +150°C
- **Gate charge (Qg)**: 16nC (V_GS = 4.5V)
- **Pin configuration**: TSSOP8 standard package for compact circuit design
- **Model**: SI6955DQ-T1-E3-VB
- **Package**: TSSOP8
- **Configuration**: Dual P-channel (Dual P+P-Channel)
- **Maximum drain-source voltage (V_DS)**: -30V
- **Gate-source voltage (V_GS)**: ±20V
- **Switching threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON)）**:
- 55mΩ @ V_GS = 4.5V
- 36mΩ @ V_GS = 10V
- **Maximum drain current (I_D)**: -5.2A
- **Technology**: Trench technology
- **Maximum power dissipation (P_D)**: 100W (depending on heat dissipation conditions)
- **Reverse recovery time**: Fast switching response for high frequency applications
- **Operating temperature range**: -55°C to +150°C
- **Gate charge (Qg)**: 16nC (V_GS = 4.5V)
- **Pin configuration**: TSSOP8 standard package for compact circuit design
Domain and module applications：
Application fields and module examples:
1. **Load switch**:
**SI6955DQ-T1-E3-VB** As a dual P-channel MOSFET, it can efficiently control the switching state of the power supply and performs well in load switch applications. Its low on-resistance and good switching characteristics make it very suitable for power control systems of various battery-powered devices, such as portable electronics, smart homes, and automotive electronic systems, ensuring effective management of battery power.
2. **Power management system**:
This MOSFET is widely used in **power management** systems, especially in switching control of low-voltage power supplies. Due to its high efficiency and low on-resistance, it can effectively reduce losses during power conversion and improve the overall efficiency of the system. It is particularly suitable for power modules such as **DC-DC converters** and **AC-DC adapters**, which helps reduce heat generation and power loss in power adapters.
3. **Battery Chargers**:
In **battery charge management** systems, **SI6955DQ-T1-E3-VB** can be used to efficiently control the battery charge and discharge process. Its dual P-channel configuration is very suitable for use as a reverse current protection and high-efficiency switching element in chargers, ensuring the stability and safety of the battery charging process. Common applications include mobile phone chargers, tablet chargers, and power tool chargers.
4. **DC-DC Converters and Power Modules**:
In **DC-DC Converters**, dual P-channel MOSFETs can be used for efficient power conversion, especially in low-voltage, high-efficiency applications. By reducing the on-resistance, the MOSFET can minimize power loss and is widely used in computer power supplies, telecommunications equipment, and power modules in consumer electronics to ensure efficient voltage conversion and power management.
5. **Automotive electronics and electric vehicle charging**:
**SI6955DQ-T1-E3-VB** is also suitable for **automotive electronic systems**, especially in power management applications in battery management and electric vehicle (EV) charging piles. This MOSFET can provide precise current control in electric vehicle charging systems and maintain efficient power conversion when charging the battery, ensuring efficient charging of the battery and extending its service life.
6. **LED driver power supply**:
In the **LED driver power supply** module, **SI6955DQ-T1-E3-VB** excels in high-frequency switching and low-power loss LED drive systems through its low R_DS(ON) and high switching efficiency. It is particularly suitable for smart lighting systems, home lighting and commercial lighting fields, and can ensure the stability and high efficiency of LED modules.
1. **Load switch**:
**SI6955DQ-T1-E3-VB** As a dual P-channel MOSFET, it can efficiently control the switching state of the power supply and performs well in load switch applications. Its low on-resistance and good switching characteristics make it very suitable for power control systems of various battery-powered devices, such as portable electronics, smart homes, and automotive electronic systems, ensuring effective management of battery power.
2. **Power management system**:
This MOSFET is widely used in **power management** systems, especially in switching control of low-voltage power supplies. Due to its high efficiency and low on-resistance, it can effectively reduce losses during power conversion and improve the overall efficiency of the system. It is particularly suitable for power modules such as **DC-DC converters** and **AC-DC adapters**, which helps reduce heat generation and power loss in power adapters.
3. **Battery Chargers**:
In **battery charge management** systems, **SI6955DQ-T1-E3-VB** can be used to efficiently control the battery charge and discharge process. Its dual P-channel configuration is very suitable for use as a reverse current protection and high-efficiency switching element in chargers, ensuring the stability and safety of the battery charging process. Common applications include mobile phone chargers, tablet chargers, and power tool chargers.
4. **DC-DC Converters and Power Modules**:
In **DC-DC Converters**, dual P-channel MOSFETs can be used for efficient power conversion, especially in low-voltage, high-efficiency applications. By reducing the on-resistance, the MOSFET can minimize power loss and is widely used in computer power supplies, telecommunications equipment, and power modules in consumer electronics to ensure efficient voltage conversion and power management.
5. **Automotive electronics and electric vehicle charging**:
**SI6955DQ-T1-E3-VB** is also suitable for **automotive electronic systems**, especially in power management applications in battery management and electric vehicle (EV) charging piles. This MOSFET can provide precise current control in electric vehicle charging systems and maintain efficient power conversion when charging the battery, ensuring efficient charging of the battery and extending its service life.
6. **LED driver power supply**:
In the **LED driver power supply** module, **SI6955DQ-T1-E3-VB** excels in high-frequency switching and low-power loss LED drive systems through its low R_DS(ON) and high switching efficiency. It is particularly suitable for smart lighting systems, home lighting and commercial lighting fields, and can ensure the stability and high efficiency of LED modules.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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