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SI6955ADQ-T1-GE3-VB Product details
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Product Introduction
**SI6955ADQ-T1-GE3-VB** is a **dual P-channel MOSFET** in **TSSOP8** package, designed with **Trench technology**, suitable for use in various **load switches** and **power management systems**. The maximum **drain-source voltage (VDS)** of this MOSFET is **-30V**, and it has a low **on-resistance (RDS(ON))**, which is **55mΩ** at **VGS=4.5V** and **36mΩ** at **VGS=10V**, which can effectively reduce power loss and improve system efficiency. The maximum **drain current (ID)** is **-5.2A**, which is suitable for applications with high current requirements. Its **gate threshold voltage (Vth)** is **-1.7V**, which can start at a lower gate voltage, making it very suitable for **low-voltage control systems**.
**SI6955ADQ-T1-GE3-VB** is a **dual P-channel MOSFET** in **TSSOP8** package, designed with **Trench technology**, suitable for use in various **load switches** and **power management systems**. The maximum **drain-source voltage (VDS)** of this MOSFET is **-30V**, and it has a low **on-resistance (RDS(ON))**, which is **55mΩ** at **VGS=4.5V** and **36mΩ** at **VGS=10V**, which can effectively reduce power loss and improve system efficiency. The maximum **drain current (ID)** is **-5.2A**, which is suitable for applications with high current requirements. Its **gate threshold voltage (Vth)** is **-1.7V**, which can start at a lower gate voltage, making it very suitable for **low-voltage control systems**.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
Detailed parameter description
- **Model**: SI6955ADQ-T1-GE3-VB
- **Package type**: TSSOP8
- **Configuration**: Dual P channel
- **VDS (drain-source voltage)**: -30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: -1.7V
- **RDS(ON) on-resistance**:
- At **VGS=4.5V**: 55mΩ
- At **VGS=10V**: 36mΩ
- **ID (maximum drain current)**: -5.2A
- **Technology**: Trench (channel process)
- **Model**: SI6955ADQ-T1-GE3-VB
- **Package type**: TSSOP8
- **Configuration**: Dual P channel
- **VDS (drain-source voltage)**: -30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: -1.7V
- **RDS(ON) on-resistance**:
- At **VGS=4.5V**: 55mΩ
- At **VGS=10V**: 36mΩ
- **ID (maximum drain current)**: -5.2A
- **Technology**: Trench (channel process)
Domain and module applications：
Applications and module examples
1. **Battery Management System (BMS)**:
**SI6955ADQ-T1-GE3-VB**'s low on-resistance and good current control characteristics make it an ideal choice for battery management systems. MOSFET can be used for **battery charge and discharge management**, effectively realizing battery protection, overcurrent protection and current switching. Due to its low current loss, it can effectively improve the overall efficiency of battery management, especially for applications such as portable devices, power tools and electric vehicles.
2. **DC-DC Converter**:
The low **RDS(ON)** and high-efficiency switching characteristics of this MOSFET make it very effective in **DC-DC converters**, especially **boost (Boost) and buck (Buck) converters**. In these applications, SI6955ADQ-T1-GE3-VB can provide efficient power conversion, reduce energy waste and improve system efficiency. It can meet the power conversion needs of **communication equipment, embedded systems and small electronic devices**.
3. **Intelligent Power Management**:
In the **Intelligent Power Management System**, **SI6955ADQ-T1-GE3-VB** can be used to achieve **efficient load switching** and **power monitoring**. Due to its **dual P-channel configuration**, it can efficiently switch between **positive and negative power inputs**, and is suitable for intelligent power systems, network equipment, battery-powered embedded devices, etc., providing stable and reliable power management.
4. **Load Switch**:
Due to the **low RDS(ON)** of this MOSFET, it can be effectively used in **load switching applications**, such as **low voltage switching power supplies, battery-powered devices, overload protection systems**. It can work stably when the load current changes, and ensures the stability and long life of the equipment through efficient switching characteristics. It is especially suitable for **power tools, mobile devices and power management modules**.
5. **LED drive circuit**:
**SI6955ADQ-T1-GE3-VB** can be widely used in **LED drive circuit** for **current regulation** and **switch control** to ensure the current stability and improve the efficiency of LED lighting. Through its low on-resistance, MOSFET can effectively reduce power loss, improve driving efficiency, and extend the service life of LED lamps.
6. **Electric vehicle battery management system**:
In **electric vehicles**, **SI6955ADQ-T1-GE3-VB** can be used as a key component of **battery management system (BMS)** to monitor the battery charging and discharging process. Its **low on-resistance** and **high current carrying capacity** can effectively manage high current charging and discharging operations, improve battery life, reduce power consumption and heat accumulation, and help optimize the overall efficiency and range of electric vehicles.
7. **Computer and communication equipment**:
In **computer power systems** or **communication equipment**, **SI6955ADQ-T1-GE3-VB** can be used for **power distribution, load protection, power switching and current control**. It can effectively achieve **stable power switching operation** and **low loss** functions, and is particularly suitable for **switches, routers, wireless base stations and other equipment**, ensuring the reliability and stability of these devices in long-term operation.
1. **Battery Management System (BMS)**:
**SI6955ADQ-T1-GE3-VB**'s low on-resistance and good current control characteristics make it an ideal choice for battery management systems. MOSFET can be used for **battery charge and discharge management**, effectively realizing battery protection, overcurrent protection and current switching. Due to its low current loss, it can effectively improve the overall efficiency of battery management, especially for applications such as portable devices, power tools and electric vehicles.
2. **DC-DC Converter**:
The low **RDS(ON)** and high-efficiency switching characteristics of this MOSFET make it very effective in **DC-DC converters**, especially **boost (Boost) and buck (Buck) converters**. In these applications, SI6955ADQ-T1-GE3-VB can provide efficient power conversion, reduce energy waste and improve system efficiency. It can meet the power conversion needs of **communication equipment, embedded systems and small electronic devices**.
3. **Intelligent Power Management**:
In the **Intelligent Power Management System**, **SI6955ADQ-T1-GE3-VB** can be used to achieve **efficient load switching** and **power monitoring**. Due to its **dual P-channel configuration**, it can efficiently switch between **positive and negative power inputs**, and is suitable for intelligent power systems, network equipment, battery-powered embedded devices, etc., providing stable and reliable power management.
4. **Load Switch**:
Due to the **low RDS(ON)** of this MOSFET, it can be effectively used in **load switching applications**, such as **low voltage switching power supplies, battery-powered devices, overload protection systems**. It can work stably when the load current changes, and ensures the stability and long life of the equipment through efficient switching characteristics. It is especially suitable for **power tools, mobile devices and power management modules**.
5. **LED drive circuit**:
**SI6955ADQ-T1-GE3-VB** can be widely used in **LED drive circuit** for **current regulation** and **switch control** to ensure the current stability and improve the efficiency of LED lighting. Through its low on-resistance, MOSFET can effectively reduce power loss, improve driving efficiency, and extend the service life of LED lamps.
6. **Electric vehicle battery management system**:
In **electric vehicles**, **SI6955ADQ-T1-GE3-VB** can be used as a key component of **battery management system (BMS)** to monitor the battery charging and discharging process. Its **low on-resistance** and **high current carrying capacity** can effectively manage high current charging and discharging operations, improve battery life, reduce power consumption and heat accumulation, and help optimize the overall efficiency and range of electric vehicles.
7. **Computer and communication equipment**:
In **computer power systems** or **communication equipment**, **SI6955ADQ-T1-GE3-VB** can be used for **power distribution, load protection, power switching and current control**. It can effectively achieve **stable power switching operation** and **low loss** functions, and is particularly suitable for **switches, routers, wireless base stations and other equipment**, ensuring the reliability and stability of these devices in long-term operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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