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SI6954DQ-T1-E3-VB Product details
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Product Introduction: SI6954DQ-T1-E3-VB
SI6954DQ-T1-E3-VB is a common drain-N+N-channel MOSFET (Common Drain-N+N-Channel) in TSSOP8 package. It has a drain-source voltage of 30V and a maximum drain current of 8.6A. It is designed for high-efficiency power switching and is widely used in power management and high-frequency current control. Using Trench technology, SI6954DQ-T1-E3-VB has a very low on-resistance (RDS(ON)), which can significantly reduce power loss and improve system efficiency. Its gate-source voltage range is ±20V and the operating threshold voltage (Vth) is 1.7V, which is suitable for low-power and high-frequency applications. Through optimized switching characteristics, SI6954DQ-T1-E3-VB can provide excellent performance in power conversion, load switching and motor control.
SI6954DQ-T1-E3-VB is a common drain-N+N-channel MOSFET (Common Drain-N+N-Channel) in TSSOP8 package. It has a drain-source voltage of 30V and a maximum drain current of 8.6A. It is designed for high-efficiency power switching and is widely used in power management and high-frequency current control. Using Trench technology, SI6954DQ-T1-E3-VB has a very low on-resistance (RDS(ON)), which can significantly reduce power loss and improve system efficiency. Its gate-source voltage range is ±20V and the operating threshold voltage (Vth) is 1.7V, which is suitable for low-power and high-frequency applications. Through optimized switching characteristics, SI6954DQ-T1-E3-VB can provide excellent performance in power conversion, load switching and motor control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description:
- **Package type**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- VGS = 10V: 12mΩ
- VGS = 4.5V: 19mΩ
- **Maximum drain current (ID)**: 8.6A
- **Technology**: Trench technology
This MOSFET adopts a low on-resistance design to ensure excellent current handling capability and power conversion efficiency even at lower gate voltages (such as VGS = 4.5V or 10V). It has a stable threshold voltage (Vth = 1.7V) and maintains high performance at low voltages, making it suitable for use in a variety of power management, load switching and motor drive applications.
- **Package type**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Drain-source voltage (VDS)**: 30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 1.7V
- **On-resistance (RDS(ON))**:
- VGS = 10V: 12mΩ
- VGS = 4.5V: 19mΩ
- **Maximum drain current (ID)**: 8.6A
- **Technology**: Trench technology
This MOSFET adopts a low on-resistance design to ensure excellent current handling capability and power conversion efficiency even at lower gate voltages (such as VGS = 4.5V or 10V). It has a stable threshold voltage (Vth = 1.7V) and maintains high performance at low voltages, making it suitable for use in a variety of power management, load switching and motor drive applications.
Domain and module applications：
Applications and modules:
1. **Power management and DC-DC converters**:
SI6954DQ-T1-E3-VB is very suitable for power management modules, especially DC-DC converters. Its low RDS(ON) can significantly reduce power loss and improve conversion efficiency. In high-efficiency power systems, especially for laptops, portable devices, TVs, power adapters and other products, it can effectively improve overall energy efficiency and reduce heat generation.
2. **Load switch and power switching**:
In load switch and power switching applications, SI6954DQ-T1-E3-VB as a switching element has extremely low on-resistance and high-frequency response, which can efficiently control current flow and reduce losses. It is widely used in products such as wireless power, smart battery management, consumer electronics, etc., especially in situations where frequent load current switching is required (such as portable devices, tablets, smart phones, etc.).
3. **Battery Management System (BMS)**:
In the battery management system (BMS), SI6954DQ-T1-E3-VB can effectively control the battery's charge and discharge process to ensure efficient operation and extended battery life. Its low on-resistance helps reduce energy loss during charging, and is particularly suitable for battery management in power tools, electric vehicles, drones and other fields.
4. **Motor Drive System**:
In the motor drive system, SI6954DQ-T1-E3-VB can be used as a current switching component to help optimize the motor's control and drive process. Whether it is stepper motor control, DC motor drive or other power tool drive systems, this MOSFET can improve the response speed and energy efficiency of motor drivers due to its efficient switching performance and low power loss, and is widely used in industrial automation, power tools, home appliances and other fields.
5. **High-frequency switching power supply applications**:
In power electronics applications that require high switching frequencies, such as solar inverters, power amplifiers, etc., the low RDS(ON) and fast switching capabilities of the SI6954DQ-T1-E3-VB enable it to efficiently convert electrical energy. In these applications, MOSFETs can reduce switching losses, improve overall system performance, and reduce heat.
1. **Power management and DC-DC converters**:
SI6954DQ-T1-E3-VB is very suitable for power management modules, especially DC-DC converters. Its low RDS(ON) can significantly reduce power loss and improve conversion efficiency. In high-efficiency power systems, especially for laptops, portable devices, TVs, power adapters and other products, it can effectively improve overall energy efficiency and reduce heat generation.
2. **Load switch and power switching**:
In load switch and power switching applications, SI6954DQ-T1-E3-VB as a switching element has extremely low on-resistance and high-frequency response, which can efficiently control current flow and reduce losses. It is widely used in products such as wireless power, smart battery management, consumer electronics, etc., especially in situations where frequent load current switching is required (such as portable devices, tablets, smart phones, etc.).
3. **Battery Management System (BMS)**:
In the battery management system (BMS), SI6954DQ-T1-E3-VB can effectively control the battery's charge and discharge process to ensure efficient operation and extended battery life. Its low on-resistance helps reduce energy loss during charging, and is particularly suitable for battery management in power tools, electric vehicles, drones and other fields.
4. **Motor Drive System**:
In the motor drive system, SI6954DQ-T1-E3-VB can be used as a current switching component to help optimize the motor's control and drive process. Whether it is stepper motor control, DC motor drive or other power tool drive systems, this MOSFET can improve the response speed and energy efficiency of motor drivers due to its efficient switching performance and low power loss, and is widely used in industrial automation, power tools, home appliances and other fields.
5. **High-frequency switching power supply applications**:
In power electronics applications that require high switching frequencies, such as solar inverters, power amplifiers, etc., the low RDS(ON) and fast switching capabilities of the SI6954DQ-T1-E3-VB enable it to efficiently convert electrical energy. In these applications, MOSFETs can reduce switching losses, improve overall system performance, and reduce heat.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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