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SI6946DQ-T1-E3-VB Product details
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SI6946DQ-T1-E3-VB Product Introduction
SI6946DQ-T1-E3-VB is a common drain N-type MOSFET in TSSOP8 package with two N-type channels, suitable for efficient power management and switching circuits. This MOSFET adopts Trench technology and has excellent electrical performance, especially in low-voltage and medium-current applications. Its maximum drain-source voltage (VDS) is 20V, the maximum gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) ranges from 0.5V to 1.5V, which is suitable for low-voltage drive environments. The on-resistance (RDS(ON)) of the MOSFET is very low, at 32mΩ (VGS = 2.5V) and 22mΩ (VGS = 4.5V), respectively, providing efficient power conversion. The maximum drain current (ID) is 6.6A, making it highly practical in multiple medium-power power management applications.
SI6946DQ-T1-E3-VB is a common drain N-type MOSFET in TSSOP8 package with two N-type channels, suitable for efficient power management and switching circuits. This MOSFET adopts Trench technology and has excellent electrical performance, especially in low-voltage and medium-current applications. Its maximum drain-source voltage (VDS) is 20V, the maximum gate-source voltage (VGS) is ±20V, and the threshold voltage (Vth) ranges from 0.5V to 1.5V, which is suitable for low-voltage drive environments. The on-resistance (RDS(ON)) of the MOSFET is very low, at 32mΩ (VGS = 2.5V) and 22mΩ (VGS = 4.5V), respectively, providing efficient power conversion. The maximum drain current (ID) is 6.6A, making it highly practical in multiple medium-power power management applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
| **Parameter** | **Value** |
|------------------------|---------------------------------|
| **Package** | TSSOP8 |
| **Configuration** | Common Drain N+N Channels|
| **Maximum Drain-Source Voltage (VDS)** | 20V |
| **Gate-Source Voltage (VGS)** | ±20V |
| **Threshold Voltage (Vth)** | 0.5V ~ 1.5V |
| **On-Resistance (RDS(ON))** | 32mΩ @ VGS = 2.5V |
| | 22mΩ @ VGS = 4.5V |
| **Maximum Drain Current (ID)** | 6.6A |
| **Technology** | Trench |
| **Parameter** | **Value** |
|------------------------|---------------------------------|
| **Package** | TSSOP8 |
| **Configuration** | Common Drain N+N Channels|
| **Maximum Drain-Source Voltage (VDS)** | 20V |
| **Gate-Source Voltage (VGS)** | ±20V |
| **Threshold Voltage (Vth)** | 0.5V ~ 1.5V |
| **On-Resistance (RDS(ON))** | 32mΩ @ VGS = 2.5V |
| | 22mΩ @ VGS = 4.5V |
| **Maximum Drain Current (ID)** | 6.6A |
| **Technology** | Trench |
Domain and module applications：
Applicable fields and modules
1. **DC-DC converter**:
Among DC-DC converters, SI6946DQ-T1-E3-VB is widely used in power management and voltage regulation. Due to its low RDS(ON) and high current handling capability, it can effectively reduce power loss and improve system efficiency. This makes it very suitable for various power converters in the low to medium voltage range, especially in portable devices and battery-driven devices.
2. **Load switch**:
Due to its excellent switching performance and low on-resistance, SI6946DQ-T1-E3-VB performs well in load switch applications. It can provide stable and reliable performance in situations where fast switching and efficient current control are required, and is widely used in power management systems, load switching and other fields.
3. **Battery Management System (BMS)**:
In the battery management system (BMS), the low on-resistance and high current carrying capacity of SI6946DQ-T1-E3-VB enable it to effectively control the battery charging and discharging process. In functions such as battery protection, overcurrent protection and cell balancing, this MOSFET can help optimize system performance, reduce energy loss and increase battery life.
4. **Power Adapter and Charger**:
In power adapters and chargers, SI6946DQ-T1-E3-VB can be used as an efficient switching element. Due to its low RDS(ON), it can reduce energy loss during switching and improve the overall efficiency of power adapters and chargers, especially in high-frequency switching applications, and can provide stable voltage and current output.
5. **Power Factor Correction (PFC) Circuit**:
SI6946DQ-T1-E3-VB can be widely used in power factor correction (PFC) circuits. Its efficient switching performance and low on-resistance can improve the efficiency of the power factor correction circuit, reduce energy loss, and ensure that the system maintains efficient operation over a wide load range. It is widely used in various power adapters and industrial power systems.
6. **Solar Photovoltaic Inverter**:
In inverter applications in solar photovoltaic systems, SI6946DQ-T1-E3-VB can be used in the power conversion link, especially in low-voltage and medium-power solar power generation systems. This MOSFET can provide efficient power conversion, helping the system to more efficiently convert solar energy into electrical energy and supply the load.
7. **Automotive Electronics and Electric Vehicle (EV) Applications**:
In electric vehicles (EVs) and their charging systems, SI6946DQ-T1-E3-VB can be used in modules such as battery voltage management, motor drive, and charging control. Due to its high current carrying capacity and low on-resistance, this MOSFET can improve the efficiency of electric vehicle power systems and charging equipment, ensuring that the system remains stable during high loads and fast charging.
1. **DC-DC converter**:
Among DC-DC converters, SI6946DQ-T1-E3-VB is widely used in power management and voltage regulation. Due to its low RDS(ON) and high current handling capability, it can effectively reduce power loss and improve system efficiency. This makes it very suitable for various power converters in the low to medium voltage range, especially in portable devices and battery-driven devices.
2. **Load switch**:
Due to its excellent switching performance and low on-resistance, SI6946DQ-T1-E3-VB performs well in load switch applications. It can provide stable and reliable performance in situations where fast switching and efficient current control are required, and is widely used in power management systems, load switching and other fields.
3. **Battery Management System (BMS)**:
In the battery management system (BMS), the low on-resistance and high current carrying capacity of SI6946DQ-T1-E3-VB enable it to effectively control the battery charging and discharging process. In functions such as battery protection, overcurrent protection and cell balancing, this MOSFET can help optimize system performance, reduce energy loss and increase battery life.
4. **Power Adapter and Charger**:
In power adapters and chargers, SI6946DQ-T1-E3-VB can be used as an efficient switching element. Due to its low RDS(ON), it can reduce energy loss during switching and improve the overall efficiency of power adapters and chargers, especially in high-frequency switching applications, and can provide stable voltage and current output.
5. **Power Factor Correction (PFC) Circuit**:
SI6946DQ-T1-E3-VB can be widely used in power factor correction (PFC) circuits. Its efficient switching performance and low on-resistance can improve the efficiency of the power factor correction circuit, reduce energy loss, and ensure that the system maintains efficient operation over a wide load range. It is widely used in various power adapters and industrial power systems.
6. **Solar Photovoltaic Inverter**:
In inverter applications in solar photovoltaic systems, SI6946DQ-T1-E3-VB can be used in the power conversion link, especially in low-voltage and medium-power solar power generation systems. This MOSFET can provide efficient power conversion, helping the system to more efficiently convert solar energy into electrical energy and supply the load.
7. **Automotive Electronics and Electric Vehicle (EV) Applications**:
In electric vehicles (EVs) and their charging systems, SI6946DQ-T1-E3-VB can be used in modules such as battery voltage management, motor drive, and charging control. Due to its high current carrying capacity and low on-resistance, this MOSFET can improve the efficiency of electric vehicle power systems and charging equipment, ensuring that the system remains stable during high loads and fast charging.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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