SI6943DQ-T1-E3-VB Product details
Product introduction:
SI6943DQ-T1-E3-VB is a dual P-channel MOSFET produced by Vishay in TSSOP8 package. This product is specially designed for low voltage applications and can operate at a drain-source voltage of -30V. This model has a dual P+P configuration and is suitable for power management systems that require reverse current control. Its low on-resistance (RDS(ON) = 55mΩ @ VGS = 4.5V) and high current carrying capacity (ID = -5.2A) enable it to achieve low power consumption while providing efficient switching control.
SI6943DQ-T1-E3-VB uses Trench technology and has good switching performance and reliability. This MOSFET is mainly used in power management, load switching, DC-DC converters, battery management, and various power control modules. Its efficient conduction performance, low power consumption characteristics and compact packaging make it an ideal choice for portable devices and battery-powered applications.
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Product parameter:
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp(V) | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
- **Model**: SI6943DQ-T1-E3-VB
- **Package type**: TSSOP8
- **Configuration**: Dual P+P channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Switching threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- @VGS = 4.5V: 55mΩ
- @VGS = 10V: 36mΩ
- **Maximum leakage current (ID)**: -5.2A
- **Technology**: Trench technology
- **Maximum power dissipation**: 1.2W
- **Operating temperature range**: -55°C to +150°C
- **Package size**: TSSOP8
- **Other features**:
- High efficiency switching performance
- Low on-resistance
- Suitable for low voltage, high current applications
- Supports higher gate-source voltage (max ±20V)
Domain and module applications:
SI6943DQ-T1-E3-VB, as a dual P+P channel MOSFET, has a wide range of applications in multiple fields and modules. The following are typical application scenarios of this product:
1. **Power management system**
SI6943DQ-T1-E3-VB can be used as a load switch in a power management system, especially for scenarios that require reverse current control. Its low on-resistance and high current carrying capacity can efficiently switch current in a low-power environment, optimize the efficiency and stability of the power supply, and extend battery life.
2. **DC-DC converter**
This MOSFET is used for switching control in a DC-DC converter. Due to its low RDS(ON), it can significantly reduce power loss during the conversion process. It is particularly suitable for low-voltage, high-current output DC-DC conversion systems to provide efficient power conversion.
3. **Battery Management System (BMS)**
In the battery management system, SI6943DQ-T1-E3-VB can be used for battery charging and discharging control. Its efficient current switching capability and low on-resistance help improve the battery charging and discharging efficiency while ensuring the stability and safety of the system. It is particularly suitable for battery-driven applications such as power tools and electric bicycles.
4. **Consumer Electronic Devices**
In consumer electronic devices such as smartphones, tablets, and wearable devices, SI6943DQ-T1-E3-VB can be used as a switching element in the power management module. Its low power consumption and high current capability help improve battery efficiency and extend the use time of the device.
5. **LED Driver**
Due to its low on-resistance and high current carrying capacity, SI6943DQ-T1-E3-VB is an ideal choice for efficient LED driver power. In LED lighting systems, it can provide constant current, thereby improving the efficiency and service life of lamps.
6. **Load Switch and Power Path Control**
SI6943DQ-T1-E3-VB can be used as a load switch for power path control, especially in smart homes, consumer electronics and industrial equipment, for automatic switching of circuits or selection of power paths. Its high current carrying capacity makes it suitable for high-power load control.
7. **Automotive Electronics**
In automotive electronic systems, SI6943DQ-T1-E3-VB can be used for power path switch control, battery charging systems and power distribution networks. Due to its efficient switching characteristics, it can significantly improve the efficiency of automotive electrical systems and reduce power consumption.
8. **Power Tools and Electric Vehicles**
In applications such as power tools, electric bicycles or electric scooters, SI6943DQ-T1-E3-VB is used as a switching element to help regulate the output power of the battery and provide efficient energy transmission. Its high current carrying capacity and low power consumption ensure the efficient operation of these devices.
9. **Computer Hardware**
In computer hardware modules, especially motherboard power management and UPS power systems, SI6943DQ-T1-E3-VB is used to control power supply, optimize power efficiency, and protect circuits from overcurrent and overvoltage.
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