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SI6943BDQ-T1-GE3-VB Product details
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Product Introduction - SI6943BDQ-T1-GE3-VB
SI6943BDQ-T1-GE3-VB is a high-performance bipolar MOSFET in TSSOP8 package. It has P-type and N-type transistor configurations and is designed for low-voltage, high-efficiency power conversion and load switching applications. With its superior on-resistance and wide operating voltage range, SI6943BDQ-T1-GE3-VB is widely used in power electronics, communication equipment and consumer electronics.
This MOSFET supports a maximum VDS value of -30V, a VGS of ±20V, and a threshold voltage (Vth) of -1.7V. Its on-resistance (RDS(ON)) is 55mΩ at VGS = 4.5V, drops to 36mΩ at VGS = 10V, and the maximum drain current ID is -5.2A. Manufactured using Trench technology, it has excellent thermal performance and switching characteristics, making it excel in high-efficiency current control applications.
SI6943BDQ-T1-GE3-VB is a high-performance bipolar MOSFET in TSSOP8 package. It has P-type and N-type transistor configurations and is designed for low-voltage, high-efficiency power conversion and load switching applications. With its superior on-resistance and wide operating voltage range, SI6943BDQ-T1-GE3-VB is widely used in power electronics, communication equipment and consumer electronics.
This MOSFET supports a maximum VDS value of -30V, a VGS of ±20V, and a threshold voltage (Vth) of -1.7V. Its on-resistance (RDS(ON)) is 55mΩ at VGS = 4.5V, drops to 36mΩ at VGS = 10V, and the maximum drain current ID is -5.2A. Manufactured using Trench technology, it has excellent thermal performance and switching characteristics, making it excel in high-efficiency current control applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | 36mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P | -30V | -1.7V | -5.2A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-P+P |
Detailed parameter description
- **Package**: TSSOP8
- **Configuration**: Dual P+P-Channel
- **VDS (drain-source voltage)**: -30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -1.7V
- **RDS(ON)**:
- 55mΩ@VGS = 4.5V
- 36mΩ@VGS = 10V
- **ID (drain current)**: -5.2A
- **Technology**: Trench
- **Maximum power consumption**: Not provided (generally depends on the package and operating conditions)
- **Operating temperature range**: Not provided (typically -40°C to +150°C)
- **Package**: TSSOP8
- **Configuration**: Dual P+P-Channel
- **VDS (drain-source voltage)**: -30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (threshold voltage)**: -1.7V
- **RDS(ON)**:
- 55mΩ@VGS = 4.5V
- 36mΩ@VGS = 10V
- **ID (drain current)**: -5.2A
- **Technology**: Trench
- **Maximum power consumption**: Not provided (generally depends on the package and operating conditions)
- **Operating temperature range**: Not provided (typically -40°C to +150°C)
Domain and module applications：
Applications and module examples
1. **Battery-powered devices (such as portable electronic devices)**
SI6943BDQ-T1-GE3-VB is suitable for battery-powered devices, especially mobile devices, smart watches, portable audio, etc. These devices usually require efficient power conversion to improve battery life. The low RDS(ON) value of this MOSFET makes it very suitable in battery management and voltage regulation modules, which can reduce power consumption and provide longer battery life.
2. **DC-DC converter**
In DC-DC converters, this type of MOSFET is widely used in efficient power conversion designs. It maintains a low on-resistance under low voltage input conditions, which can reduce energy loss and improve conversion efficiency. This makes it particularly important in areas such as automotive power, industrial power, and home appliance power management.
3. **Load switch application**
SI6943BDQ-T1-GE3-VB can be used as a load switch, especially in load switch control systems, when frequent switching is required and current flow efficiency is ensured, the fast response and low conduction loss of MOSFET can effectively improve the reliability and performance of the system.
4. **Power management module**
This MOSFET is suitable for various power management modules, especially in scenarios where multiple loads need to be controlled in power electronic systems, such as power adapters, power tools, and power supply modules in computer systems. Its high efficiency and low heat generation characteristics help reduce the heat accumulation of the system and maintain stable operation.
5. **Communication equipment power management**
In communication equipment, especially applications that require high-frequency switching and efficient energy conversion, such as base stations, wireless communication equipment, etc., SI6943BDQ-T1-GE3-VB can provide power management solutions with low on-resistance and low power consumption to ensure stable operation of the equipment and improve overall system performance.
Through these applications, SI6943BDQ-T1-GE3-VB can provide reliable solutions for high-efficiency and energy-saving systems, adapting to markets with diverse demands.
1. **Battery-powered devices (such as portable electronic devices)**
SI6943BDQ-T1-GE3-VB is suitable for battery-powered devices, especially mobile devices, smart watches, portable audio, etc. These devices usually require efficient power conversion to improve battery life. The low RDS(ON) value of this MOSFET makes it very suitable in battery management and voltage regulation modules, which can reduce power consumption and provide longer battery life.
2. **DC-DC converter**
In DC-DC converters, this type of MOSFET is widely used in efficient power conversion designs. It maintains a low on-resistance under low voltage input conditions, which can reduce energy loss and improve conversion efficiency. This makes it particularly important in areas such as automotive power, industrial power, and home appliance power management.
3. **Load switch application**
SI6943BDQ-T1-GE3-VB can be used as a load switch, especially in load switch control systems, when frequent switching is required and current flow efficiency is ensured, the fast response and low conduction loss of MOSFET can effectively improve the reliability and performance of the system.
4. **Power management module**
This MOSFET is suitable for various power management modules, especially in scenarios where multiple loads need to be controlled in power electronic systems, such as power adapters, power tools, and power supply modules in computer systems. Its high efficiency and low heat generation characteristics help reduce the heat accumulation of the system and maintain stable operation.
5. **Communication equipment power management**
In communication equipment, especially applications that require high-frequency switching and efficient energy conversion, such as base stations, wireless communication equipment, etc., SI6943BDQ-T1-GE3-VB can provide power management solutions with low on-resistance and low power consumption to ensure stable operation of the equipment and improve overall system performance.
Through these applications, SI6943BDQ-T1-GE3-VB can provide reliable solutions for high-efficiency and energy-saving systems, adapting to markets with diverse demands.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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