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SI6928DQ-T1-E3-VB Product details
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**SI6928DQ-T1-E3-VB MOSFET Product Introduction**
**Model**: SI6928DQ-T1-E3-VB
**Package Type**: TSSOP8
**Configuration**: Common Drain-N+N-Channel
**Technology**: Trench
**Maximum Drain-Source Voltage (VDS)**: 30V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 1.7V
**On-Resistance (RDS(ON))**:
- **19mΩ** @VGS=4.5V
- **12mΩ** @VGS=10V
**Maximum Drain Current (ID)**: 8.6A
SI6928DQ-T1-E3-VB is a low voltage, high performance N+N-channel MOSFET based on Trench technology. It adopts TSSOP8 package and is suitable for applications such as efficient power management, load switching and current control. It has low on-resistance and high current carrying capacity, and is particularly suitable for circuits such as efficient power conversion, current transmission and switch control.
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**Model**: SI6928DQ-T1-E3-VB
**Package Type**: TSSOP8
**Configuration**: Common Drain-N+N-Channel
**Technology**: Trench
**Maximum Drain-Source Voltage (VDS)**: 30V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: 1.7V
**On-Resistance (RDS(ON))**:
- **19mΩ** @VGS=4.5V
- **12mΩ** @VGS=10V
**Maximum Drain Current (ID)**: 8.6A
SI6928DQ-T1-E3-VB is a low voltage, high performance N+N-channel MOSFET based on Trench technology. It adopts TSSOP8 package and is suitable for applications such as efficient power management, load switching and current control. It has low on-resistance and high current carrying capacity, and is particularly suitable for circuits such as efficient power conversion, current transmission and switch control.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
**SI6928DQ-T1-E3-VB MOSFET Detailed Parameter Description**
- **Package Type**: TSSOP8
- Using TSSOP8 package, it has compact size and high heat dissipation performance, suitable for circuit design with limited space, especially in high-density power management modules.
- **Configuration**: Common Drain-N+N-Channel
- This configuration has good current transmission capability and is suitable for power conversion and switch control. The N+N structure provides higher switching speed and lower on-resistance, which can effectively improve the performance of the overall circuit.
- **VDS (drain-source voltage)**: 30V
- Supports a maximum drain-source voltage of 30V, suitable for medium voltage power systems, such as low-voltage DC-DC converters.
- **VGS (gate-source voltage)**: ±20V
- Supports a wide gate-source voltage range, which is convenient for control under different working conditions, ensuring design flexibility and wide applicability.
- **Vth (threshold voltage)**: 1.7V
- The lower threshold voltage allows the MOSFET to be turned on at a lower gate voltage, improving the switching response speed and suitable for low-voltage working systems.
- **RDS(ON)** (on-resistance):
- **19mΩ** @VGS=4.5V
- **12mΩ** @VGS=10V
- The low on-resistance ensures that the MOSFET has lower losses in the on state, improving the overall efficiency of the system and reducing heat generation.
- **ID (drain current)**: 8.6A
- The maximum drain current is 8.6A, which is sufficient to meet many medium current load requirements and is suitable for use in power systems and high-efficiency current control applications.
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- **Package Type**: TSSOP8
- Using TSSOP8 package, it has compact size and high heat dissipation performance, suitable for circuit design with limited space, especially in high-density power management modules.
- **Configuration**: Common Drain-N+N-Channel
- This configuration has good current transmission capability and is suitable for power conversion and switch control. The N+N structure provides higher switching speed and lower on-resistance, which can effectively improve the performance of the overall circuit.
- **VDS (drain-source voltage)**: 30V
- Supports a maximum drain-source voltage of 30V, suitable for medium voltage power systems, such as low-voltage DC-DC converters.
- **VGS (gate-source voltage)**: ±20V
- Supports a wide gate-source voltage range, which is convenient for control under different working conditions, ensuring design flexibility and wide applicability.
- **Vth (threshold voltage)**: 1.7V
- The lower threshold voltage allows the MOSFET to be turned on at a lower gate voltage, improving the switching response speed and suitable for low-voltage working systems.
- **RDS(ON)** (on-resistance):
- **19mΩ** @VGS=4.5V
- **12mΩ** @VGS=10V
- The low on-resistance ensures that the MOSFET has lower losses in the on state, improving the overall efficiency of the system and reducing heat generation.
- **ID (drain current)**: 8.6A
- The maximum drain current is 8.6A, which is sufficient to meet many medium current load requirements and is suitable for use in power systems and high-efficiency current control applications.
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Domain and module applications：
**SI6928DQ-T1-E3-VB MOSFET Application Fields and Modules**
1. **DC-DC Converter**:
SI6928DQ-T1-E3-VB is very suitable for low voltage DC-DC converters. Its low RDS(ON) characteristic makes it produce less power loss during the switching process, which helps to improve the conversion efficiency. It can be used as an efficient switching element in buck or boost circuits.
2. **Load Switch and Current Control**:
In load switch and current control circuits, SI6928DQ-T1-E3-VB can be used as an efficient switching element to achieve precise current control. Its low on-resistance helps to reduce the power loss generated during the switching process, extend battery life and improve system reliability.
3. **Battery Management System (BMS)**:
In the battery management system, SI6928DQ-T1-E3-VB is suitable for modules such as battery charge and discharge management and overcurrent protection. Its lower RDS(ON) makes energy transfer during battery charging and discharging more efficient, improving the overall efficiency of the system and extending battery life.
4. **Power Management**:
Suitable for various power management applications, especially those requiring low power consumption and efficient power conversion. SI6928DQ-T1-E3-VB can be used in switching power supplies, voltage regulators and other power regulation circuits to optimize power supply performance and reduce heat loss.
5. **Consumer Electronics**:
In portable consumer electronic devices such as smartphones and tablets, SI6928DQ-T1-E3-VB can be used in power switching circuits. Its low on-resistance characteristics help reduce standby power consumption, improve the battery life of the device, and provide efficient current control for the power module.
6. **Automotive Electronic Systems**:
In the field of automotive electronics, SI6928DQ-T1-E3-VB can be used in systems such as automotive power management, load switching and battery charging management. Its excellent current control characteristics can help to stably and efficiently manage the vehicle battery and power supply, ensuring the reliable operation of the automotive electronic system.
7. **Communication equipment**:
In communication equipment, such as wireless base stations, routers, switches, etc., SI6928DQ-T1-E3-VB can be used as an efficient power switch to help achieve power conversion, voltage regulation and regulation, improve system efficiency and reduce power consumption.
1. **DC-DC Converter**:
SI6928DQ-T1-E3-VB is very suitable for low voltage DC-DC converters. Its low RDS(ON) characteristic makes it produce less power loss during the switching process, which helps to improve the conversion efficiency. It can be used as an efficient switching element in buck or boost circuits.
2. **Load Switch and Current Control**:
In load switch and current control circuits, SI6928DQ-T1-E3-VB can be used as an efficient switching element to achieve precise current control. Its low on-resistance helps to reduce the power loss generated during the switching process, extend battery life and improve system reliability.
3. **Battery Management System (BMS)**:
In the battery management system, SI6928DQ-T1-E3-VB is suitable for modules such as battery charge and discharge management and overcurrent protection. Its lower RDS(ON) makes energy transfer during battery charging and discharging more efficient, improving the overall efficiency of the system and extending battery life.
4. **Power Management**:
Suitable for various power management applications, especially those requiring low power consumption and efficient power conversion. SI6928DQ-T1-E3-VB can be used in switching power supplies, voltage regulators and other power regulation circuits to optimize power supply performance and reduce heat loss.
5. **Consumer Electronics**:
In portable consumer electronic devices such as smartphones and tablets, SI6928DQ-T1-E3-VB can be used in power switching circuits. Its low on-resistance characteristics help reduce standby power consumption, improve the battery life of the device, and provide efficient current control for the power module.
6. **Automotive Electronic Systems**:
In the field of automotive electronics, SI6928DQ-T1-E3-VB can be used in systems such as automotive power management, load switching and battery charging management. Its excellent current control characteristics can help to stably and efficiently manage the vehicle battery and power supply, ensuring the reliable operation of the automotive electronic system.
7. **Communication equipment**:
In communication equipment, such as wireless base stations, routers, switches, etc., SI6928DQ-T1-E3-VB can be used as an efficient power switch to help achieve power conversion, voltage regulation and regulation, improve system efficiency and reduce power consumption.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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