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SI6926DQ-T1-GE3-VB Product details
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Product Introduction
**SI6926DQ-T1-GE3-VB** is a **dual N-channel MOSFET** in **TSSOP8** package, configured as **Common Drain** architecture, suitable for **low voltage switching** and **power control** applications. The maximum **drain-source voltage (VDS)** of this MOSFET is **20V**, which is suitable for small and medium power power management and current control circuits. Its **gate threshold voltage (Vth)** ranges from **0.5V to 1.5V**, which enables fast switching at lower gate voltages and has a low **on-resistance (RDS(ON)**, which is **32mΩ** at **VGS=2.5V** and **22mΩ** at **VGS=4.5V**, making it have excellent conductivity at a maximum drain current of **6.6A**. Adopt **Trench** technology to provide high-efficiency and low-power switching operation, widely used in various low-voltage power supply and load switch control scenarios.
**SI6926DQ-T1-GE3-VB** is a **dual N-channel MOSFET** in **TSSOP8** package, configured as **Common Drain** architecture, suitable for **low voltage switching** and **power control** applications. The maximum **drain-source voltage (VDS)** of this MOSFET is **20V**, which is suitable for small and medium power power management and current control circuits. Its **gate threshold voltage (Vth)** ranges from **0.5V to 1.5V**, which enables fast switching at lower gate voltages and has a low **on-resistance (RDS(ON)**, which is **32mΩ** at **VGS=2.5V** and **22mΩ** at **VGS=4.5V**, making it have excellent conductivity at a maximum drain current of **6.6A**. Adopt **Trench** technology to provide high-efficiency and low-power switching operation, widely used in various low-voltage power supply and load switch control scenarios.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
- **Model**: SI6926DQ-T1-GE3-VB
- **Package type**: TSSOP8
- **Configuration**: Common drain N+N channel
- **VDS (drain-source voltage)**: 20V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 0.5V to 1.5V
- **RDS(ON) on-resistance**:
- At VGS=2.5V: 32mΩ
- At VGS=4.5V: 22mΩ
- **ID (maximum drain current)**: 6.6A
- **Technology**: Trench (channel process)
- **Model**: SI6926DQ-T1-GE3-VB
- **Package type**: TSSOP8
- **Configuration**: Common drain N+N channel
- **VDS (drain-source voltage)**: 20V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: 0.5V to 1.5V
- **RDS(ON) on-resistance**:
- At VGS=2.5V: 32mΩ
- At VGS=4.5V: 22mΩ
- **ID (maximum drain current)**: 6.6A
- **Technology**: Trench (channel process)
Domain and module applications：
Applications and module examples
1. **Battery management system**:
In **Battery management system (BMS), **SI6926DQ-T1-GE3-VB**'s **low on-resistance** feature enables it to efficiently manage the battery charging and discharging process, especially for **battery driven systems such as **portable electronic devices, power tools**. MOSFET can work stably under different current and voltage conditions, and realize **load switching, overcurrent protection, charging and discharging control**.
2. **DC-DC converter**:
**SI6926DQ-T1-GE3-VB** is a **low power MOSFET**, which is widely used in **DC-DC converter**, especially in **Buck converter** and **Boost converter**, providing efficient current control and voltage conversion capabilities. In **small power modules, embedded systems, communication equipment** and other fields, by using this MOSFET, it can ensure that the converter operates in a low-loss and high-efficiency state.
3. **Power management and load switching**:
Since **SI6926DQ-T1-GE3-VB** has **lower on-resistance**, it is very suitable for **load switch control** and **power management applications**. It can be used in **intelligent power management systems, power distribution modules** to adjust power current and automatically switch power input to improve the overall efficiency and stability of the system. Especially in situations where high reliability and low power loss are required, it can effectively reduce the temperature rise of the power management module.
4. **LED drive circuit**:
In **LED drive circuit**, **SI6926DQ-T1-GE3-VB** provides **low RDS(ON)** and **higher drain current capability**, making it suitable for situations that require stable current, such as **LED lighting** systems. It can effectively regulate current, ensure the brightness consistency of LEDs, reduce power loss in the power system, and extend the service life of LED light sources.
5. **Electric Vehicles and Smart Battery Systems**:
**SI6926DQ-T1-GE3-VB** can be widely used in **electric vehicles** and **smart battery systems** due to its **high efficiency and low power loss** characteristics, especially in **battery current management, charging control, inverter system** and other fields of electric vehicles. It can stably control the charging and discharging process of the battery pack and help reduce energy waste and improve the endurance of electric vehicles.
6. **Load Switching and Protection Circuits**:
In applications that require precise **load switching and current protection**, such as **overload protection circuits, battery protection circuits, and communication power supplies**, **SI6926DQ-T1-GE3-VB** provides efficient control and protection through its **common drain configuration**, ensuring stable operation of the system under different working conditions. Its **low RDS(ON)** and **fast switching** characteristics enable it to respond to overload or power fluctuations in a short time to avoid system damage.
7. **Communications and embedded systems**:
In **communications equipment** (such as **wireless base stations, routers, power modules**), **SI6926DQ-T1-GE3-VB**'s high efficiency and **fast switching characteristics** make it an ideal choice for **communication module power management**. This MOSFET can effectively manage the power input and output of communication equipment, ensuring stability and low-power operation of the equipment under high load.
1. **Battery management system**:
In **Battery management system (BMS), **SI6926DQ-T1-GE3-VB**'s **low on-resistance** feature enables it to efficiently manage the battery charging and discharging process, especially for **battery driven systems such as **portable electronic devices, power tools**. MOSFET can work stably under different current and voltage conditions, and realize **load switching, overcurrent protection, charging and discharging control**.
2. **DC-DC converter**:
**SI6926DQ-T1-GE3-VB** is a **low power MOSFET**, which is widely used in **DC-DC converter**, especially in **Buck converter** and **Boost converter**, providing efficient current control and voltage conversion capabilities. In **small power modules, embedded systems, communication equipment** and other fields, by using this MOSFET, it can ensure that the converter operates in a low-loss and high-efficiency state.
3. **Power management and load switching**:
Since **SI6926DQ-T1-GE3-VB** has **lower on-resistance**, it is very suitable for **load switch control** and **power management applications**. It can be used in **intelligent power management systems, power distribution modules** to adjust power current and automatically switch power input to improve the overall efficiency and stability of the system. Especially in situations where high reliability and low power loss are required, it can effectively reduce the temperature rise of the power management module.
4. **LED drive circuit**:
In **LED drive circuit**, **SI6926DQ-T1-GE3-VB** provides **low RDS(ON)** and **higher drain current capability**, making it suitable for situations that require stable current, such as **LED lighting** systems. It can effectively regulate current, ensure the brightness consistency of LEDs, reduce power loss in the power system, and extend the service life of LED light sources.
5. **Electric Vehicles and Smart Battery Systems**:
**SI6926DQ-T1-GE3-VB** can be widely used in **electric vehicles** and **smart battery systems** due to its **high efficiency and low power loss** characteristics, especially in **battery current management, charging control, inverter system** and other fields of electric vehicles. It can stably control the charging and discharging process of the battery pack and help reduce energy waste and improve the endurance of electric vehicles.
6. **Load Switching and Protection Circuits**:
In applications that require precise **load switching and current protection**, such as **overload protection circuits, battery protection circuits, and communication power supplies**, **SI6926DQ-T1-GE3-VB** provides efficient control and protection through its **common drain configuration**, ensuring stable operation of the system under different working conditions. Its **low RDS(ON)** and **fast switching** characteristics enable it to respond to overload or power fluctuations in a short time to avoid system damage.
7. **Communications and embedded systems**:
In **communications equipment** (such as **wireless base stations, routers, power modules**), **SI6926DQ-T1-GE3-VB**'s high efficiency and **fast switching characteristics** make it an ideal choice for **communication module power management**. This MOSFET can effectively manage the power input and output of communication equipment, ensuring stability and low-power operation of the equipment under high load.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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