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SI6926AEDQ-T1-GE3-VB Product details
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Product Introduction: SI6926AEDQ-T1-GE3-VB
SI6926AEDQ-T1-GE3-VB is a common drain-N+N-Channel dual-channel MOSFET in TSSOP8 package. This MOSFET has a drain-source voltage of 20V and a maximum drain current of 6.6A. It uses Trench technology to provide low on-resistance (RDS(ON)) for efficient current control and power conversion. Its gate-source voltage range is ±20V, which is suitable for applications requiring high switching frequency and low power loss. This MOSFET adopts a moderate threshold voltage (Vth) that varies between 0.5V and 1.5V. It can operate at a lower gate voltage and is suitable for low-power applications, especially in scenarios that require parallel drive.
SI6926AEDQ-T1-GE3-VB is a common drain-N+N-Channel dual-channel MOSFET in TSSOP8 package. This MOSFET has a drain-source voltage of 20V and a maximum drain current of 6.6A. It uses Trench technology to provide low on-resistance (RDS(ON)) for efficient current control and power conversion. Its gate-source voltage range is ±20V, which is suitable for applications requiring high switching frequency and low power loss. This MOSFET adopts a moderate threshold voltage (Vth) that varies between 0.5V and 1.5V. It can operate at a lower gate voltage and is suitable for low-power applications, especially in scenarios that require parallel drive.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description:
- **Package type**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- VGS = 2.5V: 32mΩ
- VGS = 4.5V: 22mΩ
- **Maximum drain current (ID)**: 6.6A
- **Technology**: Trench technology
The RDS(ON) of this MOSFET remains low at a lower VGS voltage, which is suitable for high-frequency switching and current drive applications. Its efficient current handling capability and low loss characteristics make it ideal for power management and load driving.
- **Package type**: TSSOP8
- **Configuration**: Common Drain-N+N-Channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- VGS = 2.5V: 32mΩ
- VGS = 4.5V: 22mΩ
- **Maximum drain current (ID)**: 6.6A
- **Technology**: Trench technology
The RDS(ON) of this MOSFET remains low at a lower VGS voltage, which is suitable for high-frequency switching and current drive applications. Its efficient current handling capability and low loss characteristics make it ideal for power management and load driving.
Domain and module applications：
Applications and modules:
1. **Power management and DC-DC converters**:
SI6926AEDQ-T1-GE3-VB performs well in power management systems, especially in DC-DC converters. It has low RDS(ON), which can reduce switching losses and improve conversion efficiency. In these applications, this MOSFET can effectively improve the energy efficiency of the system, reduce heat, and is suitable for various portable devices, battery-powered devices, computer power supplies, and LED drivers.
2. **Load switch and power switching applications**:
In load switches and power switching modules, SI6926AEDQ-T1-GE3-VB can be used as a high-efficiency switching element. Its low on-resistance and high switching frequency response make it an ideal choice for various industrial and consumer devices. This MOSFET can be used in switching power supplies, wireless power adapters, TVs, computer power supplies, and other fields.
3. **Battery Management System (BMS)**:
In the battery management system, especially when it comes to battery charge and discharge control, SI6926AEDQ-T1-GE3-VB has reliable and efficient performance, can accurately control the battery charge and discharge process, and improve battery life and safety. By reducing power loss, it can achieve efficient energy management and extend battery life, which is particularly suitable for battery management of electric vehicles, power tools and other products.
4. **Motor Control System**:
In motor control applications, such as stepper motor drive and DC motor drive, SI6926AEDQ-T1-GE3-VB provides efficient current switching capabilities, which can reduce energy loss in the drive system and improve efficiency. It is particularly suitable for applications in power tools, electric locomotives, automation equipment and other fields.
5. **Low-power load drive**:
For some low-power load drive applications, SI6926AEDQ-T1-GE3-VB can provide fast current switching and efficient load drive capabilities, suitable for low-power electronic devices and consumer products, such as smart home devices, wearable devices and wireless sensors.
1. **Power management and DC-DC converters**:
SI6926AEDQ-T1-GE3-VB performs well in power management systems, especially in DC-DC converters. It has low RDS(ON), which can reduce switching losses and improve conversion efficiency. In these applications, this MOSFET can effectively improve the energy efficiency of the system, reduce heat, and is suitable for various portable devices, battery-powered devices, computer power supplies, and LED drivers.
2. **Load switch and power switching applications**:
In load switches and power switching modules, SI6926AEDQ-T1-GE3-VB can be used as a high-efficiency switching element. Its low on-resistance and high switching frequency response make it an ideal choice for various industrial and consumer devices. This MOSFET can be used in switching power supplies, wireless power adapters, TVs, computer power supplies, and other fields.
3. **Battery Management System (BMS)**:
In the battery management system, especially when it comes to battery charge and discharge control, SI6926AEDQ-T1-GE3-VB has reliable and efficient performance, can accurately control the battery charge and discharge process, and improve battery life and safety. By reducing power loss, it can achieve efficient energy management and extend battery life, which is particularly suitable for battery management of electric vehicles, power tools and other products.
4. **Motor Control System**:
In motor control applications, such as stepper motor drive and DC motor drive, SI6926AEDQ-T1-GE3-VB provides efficient current switching capabilities, which can reduce energy loss in the drive system and improve efficiency. It is particularly suitable for applications in power tools, electric locomotives, automation equipment and other fields.
5. **Low-power load drive**:
For some low-power load drive applications, SI6926AEDQ-T1-GE3-VB can provide fast current switching and efficient load drive capabilities, suitable for low-power electronic devices and consumer products, such as smart home devices, wearable devices and wireless sensors.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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