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SI6926ADQ-T1-GE3-VB Product details
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1. Product Introduction:
**SI6926ADQ-T1-GE3-VB** is an N+N channel MOSFET with a common drain configuration in a TSSOP8 package, designed for a variety of low-voltage, high-efficiency switching and power management applications. Its maximum drain-source voltage (VDS) is 20V and its maximum gate-source voltage (VGS) is ±20V, which is suitable for voltage-sensitive low-power devices. The gate-source threshold voltage (Vth) of this product is in the range of 0.5V to 1.5V, ensuring that it can be driven at a lower voltage. The on-resistance (RDS(ON)) of the MOSFET is 22mΩ at VGS = 4.5V, ensuring excellent low-power performance and efficient current transmission capability. Its maximum drain current (ID) is 6.6A, which is suitable for power systems and load management modules that require low loss and high efficiency.
**SI6926ADQ-T1-GE3-VB** is an N+N channel MOSFET with a common drain configuration in a TSSOP8 package, designed for a variety of low-voltage, high-efficiency switching and power management applications. Its maximum drain-source voltage (VDS) is 20V and its maximum gate-source voltage (VGS) is ±20V, which is suitable for voltage-sensitive low-power devices. The gate-source threshold voltage (Vth) of this product is in the range of 0.5V to 1.5V, ensuring that it can be driven at a lower voltage. The on-resistance (RDS(ON)) of the MOSFET is 22mΩ at VGS = 4.5V, ensuring excellent low-power performance and efficient current transmission capability. Its maximum drain current (ID) is 6.6A, which is suitable for power systems and load management modules that require low loss and high efficiency.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
2. Detailed parameter description:
- **Model**: SI6926ADQ-T1-GE3-VB
- **Package type**: TSSOP8
- **Configuration**: Common Drain N+N channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- At VGS=2.5V: 32mΩ
- At VGS=4.5V: 22mΩ
- **Maximum drain current (ID)**: 6.6A
- **Technology**: Trench technology
- **Model**: SI6926ADQ-T1-GE3-VB
- **Package type**: TSSOP8
- **Configuration**: Common Drain N+N channel
- **Maximum drain-source voltage (VDS)**: 20V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- At VGS=2.5V: 32mΩ
- At VGS=4.5V: 22mΩ
- **Maximum drain current (ID)**: 6.6A
- **Technology**: Trench technology
Domain and module applications：
### 3. Application fields and modules:
#### 1. **Low-power power management module**:
**SI6926ADQ-T1-GE3-VB** has low on-resistance and high current carrying capacity, which is very suitable for low-power power management systems. For example, in battery-powered devices, this MOSFET can be used as a power switch, load switch, and power switch in a voltage regulator. It can effectively reduce energy loss and improve the overall efficiency of the power system, especially in portable devices and rechargeable devices.
#### 2. **DC-DC converter**:
In DC-DC converters, SI6926ADQ-T1-GE3-VB is widely used in synchronous rectification or as a low-voltage switching element. The low RDS(ON) characteristic enables it to reduce switching losses in high-frequency operation and improve overall conversion efficiency. Especially in power tools, battery chargers, and embedded power management modules, it can effectively reduce conversion losses and optimize current transmission.
#### 3. **Load switch and battery protection circuit**:
As a load switch, SI6926ADQ-T1-GE3-VB can be used in battery protection circuits to ensure the safety of batteries under overcurrent, overvoltage and overtemperature conditions. The low RDS(ON) characteristics of MOSFET make it suitable for use as a current protection switch for batteries, providing efficient and low-loss current control. This is critical for battery management in mobile devices, drones and other rechargeable devices.
#### 4. **Consumer electronics**:
In consumer electronics such as smartphones, portable audio and other small electronic devices, SI6926ADQ-T1-GE3-VB can provide stable power switching for these devices due to its small TSSOP8 package and efficient power management capabilities, reducing energy loss, and improving the endurance and working stability of the device. It is particularly suitable for applications with high requirements for power management accuracy and reliability.
#### 5. **Automotive Electronic Module**:
This MOSFET can also be used in automotive electronic modules, such as on-board battery management, inverters, and on-board power supply systems. In on-board power management, it can effectively control the switching and regulation of power, optimize the energy conversion of the internal system of the car, and improve the overall efficiency of the automotive electronic system through low RDS(ON). For low-voltage automotive battery management systems, this MOSFET provides an ideal current switching solution.
### Summary:
SI6926ADQ-T1-GE3-VB is a low-voltage, low-power, high-current carrying N+N channel MOSFET suitable for various power management, load switching, battery protection, and synchronous rectification applications. Its low on-resistance and efficient switching characteristics make it an ideal choice for improving energy efficiency and reducing losses in mobile devices, power conversion, and consumer electronics.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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