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SI6925DQ-T1-GE3-VB Product details
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Product Introduction (SI6925DQ-T1-GE3-VB)
SI6925DQ-T1-GE3-VB is a common drain N-channel MOSFET produced by Vishay in TSSOP8 package. It has low on-resistance (RDS(ON)) and high current carrying capacity (ID = 6.6A), with a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of 20V (±V). SI6925DQ-T1-GE3-VB adopts Trench technology and is suitable for a variety of applications requiring efficient switching performance and low power consumption.
This model is particularly suitable for use in systems such as power management, load switching, low-voltage battery management, and battery-driven devices. Its efficient current carrying capacity and low power consumption make it an ideal choice for smartphones, tablets, portable electronics, and other consumer electronic devices. Through its optimized switching performance and low on-resistance, SI6925DQ-T1-GE3-VB provides a low power and high efficiency solution to meet a variety of application requirements.
SI6925DQ-T1-GE3-VB is a common drain N-channel MOSFET produced by Vishay in TSSOP8 package. It has low on-resistance (RDS(ON)) and high current carrying capacity (ID = 6.6A), with a drain-source voltage (VDS) of 20V and a gate-source voltage (VGS) of 20V (±V). SI6925DQ-T1-GE3-VB adopts Trench technology and is suitable for a variety of applications requiring efficient switching performance and low power consumption.
This model is particularly suitable for use in systems such as power management, load switching, low-voltage battery management, and battery-driven devices. Its efficient current carrying capacity and low power consumption make it an ideal choice for smartphones, tablets, portable electronics, and other consumer electronic devices. Through its optimized switching performance and low on-resistance, SI6925DQ-T1-GE3-VB provides a low power and high efficiency solution to meet a variety of application requirements.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | 32mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 6.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
- **Model**: SI6925DQ-T1-GE3-VB
- **Package type**: TSSOP8
- **Configuration**: Common Drain N+N channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Switching threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- @VGS = 2.5V: 32mΩ
- @VGS = 4.5V: 22mΩ
- **Maximum drain current (ID)**: 6.6A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation**: 1.2W
- **Package size**: TSSOP8
- **Other features**:
- High efficiency switching performance
- Low power consumption
- Suitable for low voltage and high current applications
- **Model**: SI6925DQ-T1-GE3-VB
- **Package type**: TSSOP8
- **Configuration**: Common Drain N+N channel
- **Drain-source voltage (VDS)**: 20V
- **Gate-source voltage (VGS)**: ±20V
- **Switching threshold voltage (Vth)**: 0.5V ~ 1.5V
- **On-resistance (RDS(ON))**:
- @VGS = 2.5V: 32mΩ
- @VGS = 4.5V: 22mΩ
- **Maximum drain current (ID)**: 6.6A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to +150°C
- **Maximum power dissipation**: 1.2W
- **Package size**: TSSOP8
- **Other features**:
- High efficiency switching performance
- Low power consumption
- Suitable for low voltage and high current applications
Domain and module applications：
Applications and modules
SI6925DQ-T1-GE3-VB is a common source-grounded N-channel MOSFET with wide applications in multiple fields and modules. Here are some typical application scenarios of this product:
1. **DC-DC converter**
SI6925DQ-T1-GE3-VB can be used in DC-DC converters, especially battery-driven systems. During the DC-DC conversion process, this MOSFET can efficiently switch current and provide stable power output. Due to its low on-resistance and high current carrying capacity, it is very suitable for use in low-voltage, high-efficiency conversion applications.
2. **Load switch and power management**
In portable devices, battery-powered systems and energy management systems, SI6925DQ-T1-GE3-VB is used as a load switch and power management component for switching and controlling power. The low RDS(ON) feature helps reduce power loss, improve battery efficiency, and extend battery life.
3. **Battery Management System (BMS)**
In the battery management system, SI6925DQ-T1-GE3-VB can be used for battery charge and discharge control, overcurrent protection and battery monitoring. Due to its low switching loss and high efficiency, it can optimize battery management and ensure long-term stable operation of the system.
4. **Consumer Electronics Devices**
SI6925DQ-T1-GE3-VB is suitable for power management modules of consumer electronics such as smartphones, tablets, and wearable devices. The MOSFET can control the power path, provide more efficient battery power, help extend battery life and reduce power consumption.
5. **LED Driver Power Supply**
In the LED driver power supply, SI6925DQ-T1-GE3-VB can effectively control the current to ensure that the LED lamps obtain constant current output. Its low on-resistance characteristics help improve the efficiency of the LED driver and are suitable for high-efficiency LED lighting systems.
6. **Power Tools and Electric Vehicles**
In electric vehicles such as power tools, e-bikes, and e-scooters, the SI6925DQ-T1-GE3-VB acts as a switching element to control energy transfer between the battery and the motor. Its high current carrying capacity and low power consumption make it suitable for use in these high-performance applications.
7. **Automotive Power Management**
In automotive electronic systems, the SI6925DQ-T1-GE3-VB can be used for functions such as power switching, load control, and battery management. Its efficient switching and low power consumption characteristics help optimize the use of the car battery and improve the overall efficiency of the electrical system.
8. **Computer Hardware and Communication Equipment**
In computer hardware (such as motherboards, UPS power supplies) and communication equipment (such as routers, base stations), the SI6925DQ-T1-GE3-VB is used in power management modules to achieve stable power control and low power conversion. Its low RDS(ON) and high current carrying capacity ensure the stability of the system during long-term operation.
SI6925DQ-T1-GE3-VB is a common source-grounded N-channel MOSFET with wide applications in multiple fields and modules. Here are some typical application scenarios of this product:
1. **DC-DC converter**
SI6925DQ-T1-GE3-VB can be used in DC-DC converters, especially battery-driven systems. During the DC-DC conversion process, this MOSFET can efficiently switch current and provide stable power output. Due to its low on-resistance and high current carrying capacity, it is very suitable for use in low-voltage, high-efficiency conversion applications.
2. **Load switch and power management**
In portable devices, battery-powered systems and energy management systems, SI6925DQ-T1-GE3-VB is used as a load switch and power management component for switching and controlling power. The low RDS(ON) feature helps reduce power loss, improve battery efficiency, and extend battery life.
3. **Battery Management System (BMS)**
In the battery management system, SI6925DQ-T1-GE3-VB can be used for battery charge and discharge control, overcurrent protection and battery monitoring. Due to its low switching loss and high efficiency, it can optimize battery management and ensure long-term stable operation of the system.
4. **Consumer Electronics Devices**
SI6925DQ-T1-GE3-VB is suitable for power management modules of consumer electronics such as smartphones, tablets, and wearable devices. The MOSFET can control the power path, provide more efficient battery power, help extend battery life and reduce power consumption.
5. **LED Driver Power Supply**
In the LED driver power supply, SI6925DQ-T1-GE3-VB can effectively control the current to ensure that the LED lamps obtain constant current output. Its low on-resistance characteristics help improve the efficiency of the LED driver and are suitable for high-efficiency LED lighting systems.
6. **Power Tools and Electric Vehicles**
In electric vehicles such as power tools, e-bikes, and e-scooters, the SI6925DQ-T1-GE3-VB acts as a switching element to control energy transfer between the battery and the motor. Its high current carrying capacity and low power consumption make it suitable for use in these high-performance applications.
7. **Automotive Power Management**
In automotive electronic systems, the SI6925DQ-T1-GE3-VB can be used for functions such as power switching, load control, and battery management. Its efficient switching and low power consumption characteristics help optimize the use of the car battery and improve the overall efficiency of the electrical system.
8. **Computer Hardware and Communication Equipment**
In computer hardware (such as motherboards, UPS power supplies) and communication equipment (such as routers, base stations), the SI6925DQ-T1-GE3-VB is used in power management modules to achieve stable power control and low power conversion. Its low RDS(ON) and high current carrying capacity ensure the stability of the system during long-term operation.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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