中文
English
SI6880EDQ-VB Product details
Back to previous pageProduct introduction：
Product Introduction: SI6880EDQ-VB
SI6880EDQ-VB is a high-efficiency common drain connected (Common Drain) N+N channel MOSFET, using TSSOP8 package, suitable for 30V drain-source voltage (V_DS) and ±20V gate-source voltage (V_GS), with a threshold voltage (V_th) of 1.7V. This MOSFET adopts advanced Trench technology to achieve low on-resistance characteristics: 19mΩ at V_GS = 4.5V and 12mΩ at V_GS = 10V. Its maximum drain current (I_D) is 8.6A, which is very suitable for applications such as efficient power management, motor drive, load switching, etc. that require low conduction loss and high power handling capabilities.
SI6880EDQ-VB is a high-efficiency common drain connected (Common Drain) N+N channel MOSFET, using TSSOP8 package, suitable for 30V drain-source voltage (V_DS) and ±20V gate-source voltage (V_GS), with a threshold voltage (V_th) of 1.7V. This MOSFET adopts advanced Trench technology to achieve low on-resistance characteristics: 19mΩ at V_GS = 4.5V and 12mΩ at V_GS = 10V. Its maximum drain current (I_D) is 8.6A, which is very suitable for applications such as efficient power management, motor drive, load switching, etc. that require low conduction loss and high power handling capabilities.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 30V | 1.7V | 8.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
Detailed parameter description
- **Package type**: TSSOP8
- **Configuration**: Conventional drain connected N+N channel MOSFET
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 12mΩ @ V_GS = 10V
- 19mΩ @ V_GS = 4.5V
- **Maximum drain current (I_D)**: 8.6A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Package type**: TSSOP8
- **Configuration**: Conventional drain connected N+N channel MOSFET
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 12mΩ @ V_GS = 10V
- 19mΩ @ V_GS = 4.5V
- **Maximum drain current (I_D)**: 8.6A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
Applications and module examples
**1. Power management and switching power supplies **
SI6880EDQ-VB is an ideal choice for power management applications, especially in switching power supplies that require low on-resistance and high efficiency. This MOSFET can be used as an efficient load switch, which can effectively reduce power loss in current flow and provide higher power efficiency. In portable devices, home appliances and industrial power systems, SI6880EDQ-VB as a switching element can reduce power consumption while improving the overall system efficiency, and is suitable for use in DC-DC converters, power amplifiers and other scenarios.
**2. Motor drive and control system **
In motor drive and control applications, SI6880EDQ-VB can be used as an efficient switching element to drive motor loads. Its low on-resistance characteristics can reduce switching losses and improve the energy efficiency of the motor system. For example, in power tools, electric vehicle drives, and robot drive control systems, MOSFETs can be used to achieve precise motor control, improve drive performance and reduce temperature rise.
**3. Load Switch and Battery Management**
Due to its low on-resistance and high current capacity, the SI6880EDQ-VB is ideal for use as a load switch in battery management systems. In mobile devices, laptops, and other portable electronic devices, this MOSFET can help achieve more efficient battery power management, reduce power loss, and improve battery life. As part of the battery protection circuit, the SI6880EDQ-VB can effectively manage the current flow during battery charging and discharging.
**4. Industrial Automation and Power Control**
SI6880EDQ-VB can be widely used in power control systems in the field of industrial automation, such as industrial drives, PLC power modules, and industrial robot control systems. In these applications, the MOSFET can be used as a fast switch to regulate the stability and efficiency of power transmission, ensuring that the equipment operates under high loads while maintaining low power consumption and high efficiency.
**5. Reverse Current Protection**
In applications that require efficient current protection, the SI6880EDQ-VB can also be used for reverse current protection. For example, in solar power systems or electric vehicle charging modules, MOSFETs can effectively prevent current from flowing in reverse and avoid damage to the battery or system circuit. By adopting a conventional drain connection configuration, the SI6880EDQ-VB can quickly cut off the current when the current reverses, protecting the system safety.
**1. Power management and switching power supplies **
SI6880EDQ-VB is an ideal choice for power management applications, especially in switching power supplies that require low on-resistance and high efficiency. This MOSFET can be used as an efficient load switch, which can effectively reduce power loss in current flow and provide higher power efficiency. In portable devices, home appliances and industrial power systems, SI6880EDQ-VB as a switching element can reduce power consumption while improving the overall system efficiency, and is suitable for use in DC-DC converters, power amplifiers and other scenarios.
**2. Motor drive and control system **
In motor drive and control applications, SI6880EDQ-VB can be used as an efficient switching element to drive motor loads. Its low on-resistance characteristics can reduce switching losses and improve the energy efficiency of the motor system. For example, in power tools, electric vehicle drives, and robot drive control systems, MOSFETs can be used to achieve precise motor control, improve drive performance and reduce temperature rise.
**3. Load Switch and Battery Management**
Due to its low on-resistance and high current capacity, the SI6880EDQ-VB is ideal for use as a load switch in battery management systems. In mobile devices, laptops, and other portable electronic devices, this MOSFET can help achieve more efficient battery power management, reduce power loss, and improve battery life. As part of the battery protection circuit, the SI6880EDQ-VB can effectively manage the current flow during battery charging and discharging.
**4. Industrial Automation and Power Control**
SI6880EDQ-VB can be widely used in power control systems in the field of industrial automation, such as industrial drives, PLC power modules, and industrial robot control systems. In these applications, the MOSFET can be used as a fast switch to regulate the stability and efficiency of power transmission, ensuring that the equipment operates under high loads while maintaining low power consumption and high efficiency.
**5. Reverse Current Protection**
In applications that require efficient current protection, the SI6880EDQ-VB can also be used for reverse current protection. For example, in solar power systems or electric vehicle charging modules, MOSFETs can effectively prevent current from flowing in reverse and avoid damage to the battery or system circuit. By adopting a conventional drain connection configuration, the SI6880EDQ-VB can quickly cut off the current when the current reverses, protecting the system safety.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
