中文
English
SI6880AEDQ-T1-GE3-VB Product details
Back to previous pageProduct introduction：
**SI6880AEDQ-T1-GE3-VB MOSFET Product Introduction**
**Model**: SI6880AEDQ-T1-GE3-VB
**Package Type**: TSSOP8
**Configuration**: Common Drain-N+N-Channel
**Technology**: Trench
**Maximum Drain-Source Voltage (VDS)**: 20V
**Maximum Gate-Source Voltage (VGS)**: ±12V
**Threshold Voltage (Vth)**: 0.5V~1.5V
**On-Resistance (RDS(ON))**:
- **18mΩ** @VGS=2.5V
- **14mΩ** @VGS=4.5V
**Maximum Drain Current (ID)**: 7.6A
SI6880AEDQ-T1-GE3-VB is a low voltage, high current, high efficiency common source N+N-channel MOSFET manufactured using Trench technology. It can be turned on at low gate voltage and has low RDS(ON), suitable for high efficiency and high power power switch applications, especially in low voltage systems and small devices. It is widely used in DC-DC converters, load switches, drive circuits and other occasions, and can provide excellent current control capabilities and low power consumption characteristics.
---
**Model**: SI6880AEDQ-T1-GE3-VB
**Package Type**: TSSOP8
**Configuration**: Common Drain-N+N-Channel
**Technology**: Trench
**Maximum Drain-Source Voltage (VDS)**: 20V
**Maximum Gate-Source Voltage (VGS)**: ±12V
**Threshold Voltage (Vth)**: 0.5V~1.5V
**On-Resistance (RDS(ON))**:
- **18mΩ** @VGS=2.5V
- **14mΩ** @VGS=4.5V
**Maximum Drain Current (ID)**: 7.6A
SI6880AEDQ-T1-GE3-VB is a low voltage, high current, high efficiency common source N+N-channel MOSFET manufactured using Trench technology. It can be turned on at low gate voltage and has low RDS(ON), suitable for high efficiency and high power power switch applications, especially in low voltage systems and small devices. It is widely used in DC-DC converters, load switches, drive circuits and other occasions, and can provide excellent current control capabilities and low power consumption characteristics.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | 18mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N | 20V | 0.5~1.5V | 7.6A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Common Drain-N+N |
**SI6880AEDQ-T1-GE3-VB MOSFET Detailed Parameter Description**
- **Package Type**: TSSOP8
- The package adopts TSSOP8 form, which is suitable for circuits with limited space and dense layout. It has good heat dissipation performance and small size, and is suitable for power management applications that require efficient heat dissipation and miniaturization design.
- **Configuration**: Common Drain-N+N-Channel
- This configuration gives it high input impedance and low output impedance, which is very suitable for efficient control in power converters, load switches and high current drive circuits.
- **VDS (drain-source voltage)**: 20V
- Supports a maximum drain-source voltage of 20V, suitable for low-voltage power systems, and provides good performance for power management and control applications.
- **VGS (gate-source voltage)**: ±12V
- Supporting gate-source voltage of ±12V makes the gate control voltage range wider, which is conducive to flexible circuit design and efficient current control.
- **Vth (threshold voltage)**: 0.5V~1.5V
- The lower threshold voltage allows the MOSFET to be turned on at a lower gate voltage, improving the switching speed and enabling the device to operate efficiently in low-voltage power systems.
- **RDS(ON)** (on-resistance):
- **18mΩ** @VGS=2.5V
- **14mΩ** @VGS=4.5V
- The very low on-resistance ensures that the power loss and heat generated when the MOSFET is working is minimized, which helps to improve the efficiency of the system.
- **ID (drain current)**: 7.6A
- The maximum drain current is 7.6A, which can withstand a large current load and is suitable for high-current power switches and drive circuits.
---
- **Package Type**: TSSOP8
- The package adopts TSSOP8 form, which is suitable for circuits with limited space and dense layout. It has good heat dissipation performance and small size, and is suitable for power management applications that require efficient heat dissipation and miniaturization design.
- **Configuration**: Common Drain-N+N-Channel
- This configuration gives it high input impedance and low output impedance, which is very suitable for efficient control in power converters, load switches and high current drive circuits.
- **VDS (drain-source voltage)**: 20V
- Supports a maximum drain-source voltage of 20V, suitable for low-voltage power systems, and provides good performance for power management and control applications.
- **VGS (gate-source voltage)**: ±12V
- Supporting gate-source voltage of ±12V makes the gate control voltage range wider, which is conducive to flexible circuit design and efficient current control.
- **Vth (threshold voltage)**: 0.5V~1.5V
- The lower threshold voltage allows the MOSFET to be turned on at a lower gate voltage, improving the switching speed and enabling the device to operate efficiently in low-voltage power systems.
- **RDS(ON)** (on-resistance):
- **18mΩ** @VGS=2.5V
- **14mΩ** @VGS=4.5V
- The very low on-resistance ensures that the power loss and heat generated when the MOSFET is working is minimized, which helps to improve the efficiency of the system.
- **ID (drain current)**: 7.6A
- The maximum drain current is 7.6A, which can withstand a large current load and is suitable for high-current power switches and drive circuits.
---
Domain and module applications：
**Application fields and modules of SI6880AEDQ-T1-GE3-VB MOSFET**
1. **DC-DC converter**:
In the DC-DC converter, SI6880AEDQ-T1-GE3-VB can be used as a switching element for efficient voltage conversion. Its low RDS(ON) can reduce energy loss and improve conversion efficiency, and is suitable for low-voltage and high-efficiency power management systems.
2. **Load switch circuit**:
In the load switch circuit, SI6880AEDQ-T1-GE3-VB can efficiently control the flow of current and is used in power management, battery protection and other fields. Low on-resistance makes current control more precise and stable while reducing power loss.
3. **Battery Management System (BMS)**:
This MOSFET is very suitable for battery charge and discharge control in battery management systems. It can respond quickly at low voltage, help achieve precise control of the battery, extend battery life and improve the energy efficiency of the entire system.
4. **Motor drive**:
In motor drive applications, SI6880AEDQ-T1-GE3-VB, as an efficient switching element, can effectively control current transmission and achieve precise control and efficient operation of the motor. Low on-resistance reduces current transmission loss and is suitable for efficient motor drive modules.
5. **Portable consumer electronics**:
In portable consumer electronic devices such as smartphones, tablets, notebooks, etc., SI6880AEDQ-T1-GE3-VB can be used in power management modules to provide efficient power switching, voltage reduction and voltage regulation functions. Its low power consumption and high efficiency help extend the battery life of the device.
6. **Load protection and overcurrent protection circuit**:
In load protection and overcurrent protection circuits, SI6880AEDQ-T1-GE3-VB can be used to monitor and control overcurrent conditions to ensure that the system is within the normal operating range and avoid overload damage to the circuit. It can be used as a switching element to cut off or limit current, improving the safety of the system.
7. **Automotive Electronics Application**:
SI6880AEDQ-T1-GE3-VB is also suitable for power control and protection modules in automotive electronic systems. Low on-resistance and high current carrying capacity enable it to work efficiently and stably in automotive power systems, and is suitable for use as key components such as battery management and power switches.
1. **DC-DC converter**:
In the DC-DC converter, SI6880AEDQ-T1-GE3-VB can be used as a switching element for efficient voltage conversion. Its low RDS(ON) can reduce energy loss and improve conversion efficiency, and is suitable for low-voltage and high-efficiency power management systems.
2. **Load switch circuit**:
In the load switch circuit, SI6880AEDQ-T1-GE3-VB can efficiently control the flow of current and is used in power management, battery protection and other fields. Low on-resistance makes current control more precise and stable while reducing power loss.
3. **Battery Management System (BMS)**:
This MOSFET is very suitable for battery charge and discharge control in battery management systems. It can respond quickly at low voltage, help achieve precise control of the battery, extend battery life and improve the energy efficiency of the entire system.
4. **Motor drive**:
In motor drive applications, SI6880AEDQ-T1-GE3-VB, as an efficient switching element, can effectively control current transmission and achieve precise control and efficient operation of the motor. Low on-resistance reduces current transmission loss and is suitable for efficient motor drive modules.
5. **Portable consumer electronics**:
In portable consumer electronic devices such as smartphones, tablets, notebooks, etc., SI6880AEDQ-T1-GE3-VB can be used in power management modules to provide efficient power switching, voltage reduction and voltage regulation functions. Its low power consumption and high efficiency help extend the battery life of the device.
6. **Load protection and overcurrent protection circuit**:
In load protection and overcurrent protection circuits, SI6880AEDQ-T1-GE3-VB can be used to monitor and control overcurrent conditions to ensure that the system is within the normal operating range and avoid overload damage to the circuit. It can be used as a switching element to cut off or limit current, improving the safety of the system.
7. **Automotive Electronics Application**:
SI6880AEDQ-T1-GE3-VB is also suitable for power control and protection modules in automotive electronic systems. Low on-resistance and high current carrying capacity enable it to work efficiently and stably in automotive power systems, and is suitable for use as key components such as battery management and power switches.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
