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SI6874EDQ-T1-E3-VB Product details

Product introduction:

Product Introduction

**SI6874EDQ-T1-E3-VB** is a **dual N-channel MOSFET**, packaged as **SOP8**, using advanced **Trench technology**, with **low on-resistance** and **high current carrying capacity**. The **maximum drain-source voltage (VDS)** of this MOSFET is **20V**, and supports **±12V** gate-source voltage (VGS). Its **gate threshold voltage (Vth)** ranges from **0.5V to 1.5V**, which can ensure a lower switching threshold and provide a fast response. The on-resistance of this MOSFET is **26mΩ** at **4.5V gate voltage**, **19mΩ** at **10V gate voltage**, and the maximum drain current is **7.1A**, which is suitable for various applications requiring high efficiency and low power loss.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A 19mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
SOP8 Dual-N+N Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
SOP8 Dual-N+N 20V 0.5~1.5V 7.1A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
SOP8 Dual-N+N
Detailed parameter description

- **Model**: SI6874EDQ-T1-E3-VB
- **Package type**: SOP8
- **Configuration**: Dual N-channel
- **VDS (drain-source voltage)**: 20V
- **VGS (gate-source voltage)**: ±12V
- **Vth (gate threshold voltage)**: 0.5V ~ 1.5V
- **RDS(ON) on-resistance**:
- At 4.5V gate voltage: 26mΩ
- At 10V gate voltage: 19mΩ
- **ID (maximum drain current)**: 7.1A
- **Technology**: Trench (channel process)

Domain and module applications:

Applications and module examples

1. **DC-DC converter**:
Due to **low on-resistance** and **high current carrying capacity**, **SI6874EDQ-T1-E3-VB** performs particularly well in current switching functions in **DC-DC converter**. It is particularly suitable for **buck** and **boost** converters, and can provide efficient power conversion in low-voltage, high-current applications such as **power modules, battery management systems**.

2. **Load switch**:
The low on-resistance of this MOSFET makes it very suitable for **load switching applications**, especially in environments that require fast switching and stable current control. It can be used in applications such as **power distribution circuits, energy management systems** and **battery protection circuits** to provide efficient current regulation, reduce energy loss, and ensure stable system operation.

3. **Automotive power management system**:
In **automotive electronic systems**, especially battery management and power management modules, **SI6874EDQ-T1-E3-VB** provides ideal load switching and current control capabilities. It can meet the high-efficiency control requirements of **on-board power systems, smart charging modules** and **battery charging circuits**, ensuring stability and efficiency during battery charging and discharging.

4. **LED drive circuit**:
**SI6874EDQ-T1-E3-VB** is also very suitable for **LED drive circuits** due to its low on-resistance and high current capacity, especially in **LED lighting systems**, providing precise current regulation. Both **dimming systems** and **high-efficiency lighting devices** can use this MOSFET to achieve fast response and stable performance.

5. **Intelligent Power Management**:
In the **Intelligent Power Management** system, **SI6874EDQ-T1-E3-VB** can be used for **battery power management, power switching, over-current protection** and other functions. It can efficiently switch the power input and provide stable power output, which is especially suitable for **portable devices, power tools, lead-free battery chargers** and other products to improve the operating efficiency and extend the service life of the equipment.

6. **Portable Electronic Devices**:
**SI6874EDQ-T1-E3-VB** is very suitable for **portable electronic devices**, such as **smartphones, tablets, wearable devices**, etc., due to its good switching performance and low on-resistance. These devices usually require small and efficient power switching solutions, **SI6874EDQ-T1-E3-VB** provides ideal features to reduce battery consumption and increase the working time of the device.

7. **High-efficiency power control system**:
In the **high-efficiency power control system**, **SI6874EDQ-T1-E3-VB** can provide precise current control, especially in power regulation and load switching. It is suitable for **industrial automation systems, power supply modules, instrumentation and equipment** and other fields that require stable power regulation, improving overall energy efficiency and reducing energy loss.

8. **Communication equipment power management**:
In **communication equipment** (such as routers, switches, base station power systems), **SI6874EDQ-T1-E3-VB** is suitable for **power management modules**. It can be used as a switching element to efficiently control power input and output, reduce energy loss, improve system stability, and ensure the reliability of communication equipment under long-term operation.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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