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SI6562DQ-T1-GE3-VB Product details
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Product Introduction: SI6562DQ-T1-GE3-VB
SI6562DQ-T1-GE3-VB is a bipolar N+P-type channel MOSFET in TSSOP8 package. This product combines the characteristics of N-type and P-type MOSFETs, with a drain-source voltage of ±30V and a gate-source voltage of ±20V. It is suitable for bipolar circuit design and provides a highly integrated solution that can significantly improve circuit efficiency and reduce the number of components. It uses Trench technology, which allows the MOSFET to still provide very low on-resistance at low gate-source voltage, making it particularly suitable for power conversion and power management applications. The combination of N-type and P-type channels enables the MOSFET to maintain high-efficiency performance in different operating modes, making it suitable for circuit designs that require bipolar current drive.
SI6562DQ-T1-GE3-VB is a bipolar N+P-type channel MOSFET in TSSOP8 package. This product combines the characteristics of N-type and P-type MOSFETs, with a drain-source voltage of ±30V and a gate-source voltage of ±20V. It is suitable for bipolar circuit design and provides a highly integrated solution that can significantly improve circuit efficiency and reduce the number of components. It uses Trench technology, which allows the MOSFET to still provide very low on-resistance at low gate-source voltage, making it particularly suitable for power conversion and power management applications. The combination of N-type and P-type channels enables the MOSFET to maintain high-efficiency performance in different operating modes, making it suitable for circuit designs that require bipolar current drive.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P | ±30V | 2/-2V | 6.2/5A | 2/7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P | ±30V | 2/-2V | 6.2/5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P | ±30V | 2/-2V | 6.2/5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P |
Detailed parameter description:
- **Package type**: TSSOP8
- **Configuration**: Bipolar N+P-Channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N-type: 2V
- P-type: -2V
- **On-resistance (RDS(ON))**:
- N-type (VGS = 10V): 2mΩ
- P-type (VGS = 10V): 7mΩ
- N-type (VGS = 4.5V): 2mΩ
- P-type (VGS = 4.5V): 14mΩ
- **Maximum drain current (ID)**:
- N-type: 6.2A
- P-type: 5A
- **Technology**: Trench technology
This MOSFET has a very low on-resistance, which can effectively reduce power losses, especially in high-frequency switching mode. In addition, the combination of N-type and P-type MOSFET makes it suitable for applications such as power management and inverters that require bidirectional current drive.
- **Package type**: TSSOP8
- **Configuration**: Bipolar N+P-Channel
- **Drain-source voltage (VDS)**: ±30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**:
- N-type: 2V
- P-type: -2V
- **On-resistance (RDS(ON))**:
- N-type (VGS = 10V): 2mΩ
- P-type (VGS = 10V): 7mΩ
- N-type (VGS = 4.5V): 2mΩ
- P-type (VGS = 4.5V): 14mΩ
- **Maximum drain current (ID)**:
- N-type: 6.2A
- P-type: 5A
- **Technology**: Trench technology
This MOSFET has a very low on-resistance, which can effectively reduce power losses, especially in high-frequency switching mode. In addition, the combination of N-type and P-type MOSFET makes it suitable for applications such as power management and inverters that require bidirectional current drive.
Domain and module applications：
Applications and modules:
1. **Power management and DC-DC converters**:
Due to its high efficiency and low on-resistance, the SI6562DQ-T1-GE3-VB is well suited for use in power management modules, especially DC-DC converters. In these applications, the combination of N-type and P-type MOSFETs enables efficient voltage conversion, reduces energy loss, and improves overall system efficiency.
2. **Bidirectional current conversion applications**:
This MOSFET uses an N+P bipolar configuration, which is particularly suitable for circuits with bidirectional current flow. For example, in inverters and charge management systems, the MOSFET can provide high-efficiency support in forward and reverse current conversion. It can achieve efficient energy conversion and reduce switching losses in inverters.
3. **Battery Management System (BMS)**:
In battery management systems, especially when it comes to charge and discharge control, the SI6562DQ-T1-GE3-VB can help achieve efficient battery voltage monitoring and current regulation. Because the MOSFET has excellent conduction characteristics under different voltage conditions, it can effectively protect the battery and optimize energy use.
4. **Motor Driver**:
For motor control systems, SI6562DQ-T1-GE3-VB provides an efficient solution, especially when bipolar current control is required. When N-type and P-type MOSFETs are used together, the response speed and energy efficiency of the motor driver can be improved, which is particularly useful in inverter and motor speed regulation applications.
5. **Power Electronics and Power Conversion Applications**:
In efficient power electronic systems, especially those requiring higher switching frequencies, such as solar inverters, wind power generation systems, etc., SI6562DQ-T1-GE3-VB can be used to efficiently convert electrical energy. In these applications, it can achieve lower power losses and higher energy efficiency by optimizing on-resistance and switching performance.
1. **Power management and DC-DC converters**:
Due to its high efficiency and low on-resistance, the SI6562DQ-T1-GE3-VB is well suited for use in power management modules, especially DC-DC converters. In these applications, the combination of N-type and P-type MOSFETs enables efficient voltage conversion, reduces energy loss, and improves overall system efficiency.
2. **Bidirectional current conversion applications**:
This MOSFET uses an N+P bipolar configuration, which is particularly suitable for circuits with bidirectional current flow. For example, in inverters and charge management systems, the MOSFET can provide high-efficiency support in forward and reverse current conversion. It can achieve efficient energy conversion and reduce switching losses in inverters.
3. **Battery Management System (BMS)**:
In battery management systems, especially when it comes to charge and discharge control, the SI6562DQ-T1-GE3-VB can help achieve efficient battery voltage monitoring and current regulation. Because the MOSFET has excellent conduction characteristics under different voltage conditions, it can effectively protect the battery and optimize energy use.
4. **Motor Driver**:
For motor control systems, SI6562DQ-T1-GE3-VB provides an efficient solution, especially when bipolar current control is required. When N-type and P-type MOSFETs are used together, the response speed and energy efficiency of the motor driver can be improved, which is particularly useful in inverter and motor speed regulation applications.
5. **Power Electronics and Power Conversion Applications**:
In efficient power electronic systems, especially those requiring higher switching frequencies, such as solar inverters, wind power generation systems, etc., SI6562DQ-T1-GE3-VB can be used to efficiently convert electrical energy. In these applications, it can achieve lower power losses and higher energy efficiency by optimizing on-resistance and switching performance.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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