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SI6552DQ-T1-E3-VB Product details
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SI6552DQ-T1-E3-VB Product Introduction
SI6552DQ-T1-E3-VB is a bipolar N-type and P-type MOSFET in a TSSOP8 package, suitable for efficient power management and switching circuits. The product has a dual-channel design, which includes an N-type and a P-type channel MOSFET, which can provide high switching speed and low on-resistance. It supports VDS maximum ±30V and VGS maximum ±20V, and is suitable for various medium and high voltage power conversion, battery management, inverters and other power control applications. Due to the use of Trench technology, SI6552DQ-T1-E3-VB excels in low on-resistance and high current handling capabilities, and is an ideal choice for application scenarios that require efficient power conversion.
SI6552DQ-T1-E3-VB is a bipolar N-type and P-type MOSFET in a TSSOP8 package, suitable for efficient power management and switching circuits. The product has a dual-channel design, which includes an N-type and a P-type channel MOSFET, which can provide high switching speed and low on-resistance. It supports VDS maximum ±30V and VGS maximum ±20V, and is suitable for various medium and high voltage power conversion, battery management, inverters and other power control applications. Due to the use of Trench technology, SI6552DQ-T1-E3-VB excels in low on-resistance and high current handling capabilities, and is an ideal choice for application scenarios that require efficient power conversion.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P | ±30V | 2/-2V | 6.2/5A | 2/7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P | ±30V | 2/-2V | 6.2/5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P | ±30V | 2/-2V | 6.2/5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P |
Detailed parameter description
| **Parameter** | **Value** |
|------------------------|---------------------------------|
| **Package** | TSSOP8 |
| **Configuration** | Dual N-type + P-type channels|
| **Maximum drain-source voltage (VDS)** | ±30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 2V / -2V |
| **On-resistance (RDS(ON))** | N-type: 2mΩ @ VGS=4.5V, 2mΩ @ VGS=10V |
| | P-type: 14mΩ @ VGS=4.5V, 7mΩ @ VGS=10V |
| **Maximum drain current (ID)** | N-type: 6.2A, P-type: 5A |
| **Technology** | Trench |
| **Parameter** | **Value** |
|------------------------|---------------------------------|
| **Package** | TSSOP8 |
| **Configuration** | Dual N-type + P-type channels|
| **Maximum drain-source voltage (VDS)** | ±30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 2V / -2V |
| **On-resistance (RDS(ON))** | N-type: 2mΩ @ VGS=4.5V, 2mΩ @ VGS=10V |
| | P-type: 14mΩ @ VGS=4.5V, 7mΩ @ VGS=10V |
| **Maximum drain current (ID)** | N-type: 6.2A, P-type: 5A |
| **Technology** | Trench |
Domain and module applications：
Application fields and modules
1. **DC-DC converter**:
In DC-DC converters, SI6552DQ-T1-E3-VB is widely used as a dual-channel MOSFET. Its low RDS(ON) and high current carrying capacity enable it to reduce energy loss and provide stable voltage output in efficient power conversion. Especially in battery-driven devices (such as portable electronic devices, laptops, etc.), the use of this MOSFET can significantly improve the efficiency of the power supply.
2. **Battery Management System (BMS)**:
In the battery management system (BMS), the high efficiency performance of this MOSFET can help control the charging and discharging process of the battery. Especially in the functions of voltage regulation, overcharge protection and cell balancing of the battery pack, the performance of the battery management system and the battery life can be improved through efficient power switch control. The combination design of N-type and P-type enables the battery management system to remain stable under high efficiency and complex load conditions.
3. **Electric Vehicle (EV) Drive Control System**:
In the drive control system of electric vehicles (EVs), SI6552DQ-T1-E3-VB can be used for battery voltage conversion, motor drive, and other power management modules. This MOSFET has excellent switching performance in the inverter and charging control system of electric vehicles, and can withstand high currents and voltages to ensure efficient and stable operation of the power system.
4. **Power Factor Correction (PFC) Circuit**:
In the power factor correction circuit, SI6552DQ-T1-E3-VB can be used for efficient power conversion. By achieving low RDS(ON) in high-frequency switching applications, it can reduce energy loss in the conversion process and improve the overall efficiency of the system. Especially in the fields of high power factor power adapters, switching power supplies, and UPS power supplies, the performance of this MOSFET is very suitable for providing precise power management.
5. **Inverter and Solar Photovoltaic Applications**:
In solar photovoltaic systems, SI6552DQ-T1-E3-VB can be used as a dual-channel MOSFET for power regulation and conversion in inverters. With its low on-resistance and high current handling capability, the MOSFET can operate at maximum efficiency, ensuring efficient energy conversion in solar systems.
6. **Power Adapter and Charger**:
This MOSFET is suitable for a variety of power adapter and charger designs, especially in applications that require high efficiency and low energy loss. Due to its low RDS(ON), it can reduce power loss, improve conversion efficiency, and maintain stable current output under high load conditions.
By combining its low RDS(ON) characteristics and bipolar channel configuration, SI6552DQ-T1-E3-VB can provide stable and efficient solutions for a variety of modern power management systems, and is widely used in battery management, power conversion, inverters, and electric vehicles and other efficient power management fields.
1. **DC-DC converter**:
In DC-DC converters, SI6552DQ-T1-E3-VB is widely used as a dual-channel MOSFET. Its low RDS(ON) and high current carrying capacity enable it to reduce energy loss and provide stable voltage output in efficient power conversion. Especially in battery-driven devices (such as portable electronic devices, laptops, etc.), the use of this MOSFET can significantly improve the efficiency of the power supply.
2. **Battery Management System (BMS)**:
In the battery management system (BMS), the high efficiency performance of this MOSFET can help control the charging and discharging process of the battery. Especially in the functions of voltage regulation, overcharge protection and cell balancing of the battery pack, the performance of the battery management system and the battery life can be improved through efficient power switch control. The combination design of N-type and P-type enables the battery management system to remain stable under high efficiency and complex load conditions.
3. **Electric Vehicle (EV) Drive Control System**:
In the drive control system of electric vehicles (EVs), SI6552DQ-T1-E3-VB can be used for battery voltage conversion, motor drive, and other power management modules. This MOSFET has excellent switching performance in the inverter and charging control system of electric vehicles, and can withstand high currents and voltages to ensure efficient and stable operation of the power system.
4. **Power Factor Correction (PFC) Circuit**:
In the power factor correction circuit, SI6552DQ-T1-E3-VB can be used for efficient power conversion. By achieving low RDS(ON) in high-frequency switching applications, it can reduce energy loss in the conversion process and improve the overall efficiency of the system. Especially in the fields of high power factor power adapters, switching power supplies, and UPS power supplies, the performance of this MOSFET is very suitable for providing precise power management.
5. **Inverter and Solar Photovoltaic Applications**:
In solar photovoltaic systems, SI6552DQ-T1-E3-VB can be used as a dual-channel MOSFET for power regulation and conversion in inverters. With its low on-resistance and high current handling capability, the MOSFET can operate at maximum efficiency, ensuring efficient energy conversion in solar systems.
6. **Power Adapter and Charger**:
This MOSFET is suitable for a variety of power adapter and charger designs, especially in applications that require high efficiency and low energy loss. Due to its low RDS(ON), it can reduce power loss, improve conversion efficiency, and maintain stable current output under high load conditions.
By combining its low RDS(ON) characteristics and bipolar channel configuration, SI6552DQ-T1-E3-VB can provide stable and efficient solutions for a variety of modern power management systems, and is widely used in battery management, power conversion, inverters, and electric vehicles and other efficient power management fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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