中文
English
SI6544DQ-T1-GE3-VB Product details
Back to previous pageProduct introduction：
1. Product Introduction:
**SI6544DQ-T1-GE3-VB** is a dual-channel MOSFET in TSSOP8 package with N and P channel configurations. It supports bidirectional voltage operation with a maximum drain-source voltage (VDS) of ±30V, suitable for various power management and switching applications. The gate-source threshold voltage (Vth) of this product is 2V (N-Channel) and -2V (P-Channel), respectively, providing low on-resistance and high efficiency, suitable for power supply designs requiring low power loss and high efficiency. The on-resistance (RDS(ON)) of this MOSFET is 2mΩ (N-Channel) and 7mΩ (P-Channel) at VGS=10V, and the maximum drain current (ID) is 6.2A (N-Channel) and 5A (P-Channel). It is widely used in battery management, power conversion, synchronous rectification and other fields, and is particularly suitable for circuit designs requiring high efficiency and reliability.
**SI6544DQ-T1-GE3-VB** is a dual-channel MOSFET in TSSOP8 package with N and P channel configurations. It supports bidirectional voltage operation with a maximum drain-source voltage (VDS) of ±30V, suitable for various power management and switching applications. The gate-source threshold voltage (Vth) of this product is 2V (N-Channel) and -2V (P-Channel), respectively, providing low on-resistance and high efficiency, suitable for power supply designs requiring low power loss and high efficiency. The on-resistance (RDS(ON)) of this MOSFET is 2mΩ (N-Channel) and 7mΩ (P-Channel) at VGS=10V, and the maximum drain current (ID) is 6.2A (N-Channel) and 5A (P-Channel). It is widely used in battery management, power conversion, synchronous rectification and other fields, and is particularly suitable for circuit designs requiring high efficiency and reliability.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P | ±30V | 2/-2V | 6.2/5A | 2/7mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P | ±30V | 2/-2V | 6.2/5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P | ±30V | 2/-2V | 6.2/5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Dual-N+P |
2. Detailed parameter description:
- **Model**: SI6544DQ-T1-GE3-VB
- **Package type**: TSSOP8
- **Configuration**: Dual N+P channel
- **Maximum drain-source voltage (VDS)**: ±30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**:
- N-Channel: 2V
- P-Channel: -2V
- **On-resistance (RDS(ON))**:
- N-Channel:
- 2mΩ (at VGS=4.5V)
- 2mΩ (at VGS=10V)
- P-Channel:
- 14mΩ (at VGS=4.5V)
- 7mΩ (at VGS=10V)
- **Maximum drain current (ID)**:
- N-Channel: 6.2A
- P-Channel: 5A
- **Technology**: Trench process
- **Model**: SI6544DQ-T1-GE3-VB
- **Package type**: TSSOP8
- **Configuration**: Dual N+P channel
- **Maximum drain-source voltage (VDS)**: ±30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**:
- N-Channel: 2V
- P-Channel: -2V
- **On-resistance (RDS(ON))**:
- N-Channel:
- 2mΩ (at VGS=4.5V)
- 2mΩ (at VGS=10V)
- P-Channel:
- 14mΩ (at VGS=4.5V)
- 7mΩ (at VGS=10V)
- **Maximum drain current (ID)**:
- N-Channel: 6.2A
- P-Channel: 5A
- **Technology**: Trench process
Domain and module applications：
3. Application fields and modules:
#### 1. **Synchronous rectifier power module**:
**SI6544DQ-T1-GE3-VB** can be widely used in high-efficiency synchronous rectifier power modules. The dual MOSFET configuration of N-Channel and P-Channel makes it very suitable for use in power management circuits such as DC-DC converters, buck/boost converters, AC-DC power supplies, etc. Through low RDS(ON) and high current carrying capacity, it reduces power loss and improves power conversion efficiency, especially suitable for low-voltage and high-efficiency power supply design.
#### 2. **Battery Management System (BMS)**:
Due to its efficient switching performance, this MOSFET is particularly suitable for load switching and battery protection applications in battery management systems. It can provide reliable switching control during battery charging and discharging, protecting the battery from adverse conditions such as overcurrent and overcharging. The dual-channel structure provides more flexible control of the battery power system and supports more efficient battery voltage and current regulation.
#### 3. **Load Switch**:
As a load switch element, the SI6544DQ-T1-GE3-VB performs well in low-power load control. Its low on-resistance and high current capability make it suitable for use as a load switch in portable devices, embedded systems or consumer electronics. Through efficient switching operation, it can help the system reduce heat generation and improve the overall performance of the device.
#### 4. **Inverter and Power Tool Power Management**:
In applications such as inverters and power tools, the SI6544DQ-T1-GE3-VB provides stable power management and efficient switching operation. The combination of P-Channel and N-Channel MOSFETs helps provide more efficient current control and reduce energy loss. Especially in the switching and power conversion of high-power loads, it can improve the overall system efficiency.
#### 5. **Power Regulation and Conversion Systems**:
In power regulators (such as high-efficiency power modules), SI6544DQ-T1-GE3-VB can reduce losses during the conversion process and improve power conversion efficiency. Especially in the fields of power tools, home appliances, automotive electronics, and industrial automation, efficient energy conversion and current control are required. The use of this MOSFET can effectively reduce switching losses and improve system reliability and stability.
### Summary:
SI6544DQ-T1-GE3-VB is a dual-channel MOSFET with superior performance and low power consumption. It is suitable for various high-efficiency power management applications, especially synchronous rectification, battery management, power conversion, and load switch modules. Its low on-resistance, high current carrying capacity, and reliable switching characteristics make it an ideal choice for efficient and reliable circuit design in many fields.
#### 1. **Synchronous rectifier power module**:
**SI6544DQ-T1-GE3-VB** can be widely used in high-efficiency synchronous rectifier power modules. The dual MOSFET configuration of N-Channel and P-Channel makes it very suitable for use in power management circuits such as DC-DC converters, buck/boost converters, AC-DC power supplies, etc. Through low RDS(ON) and high current carrying capacity, it reduces power loss and improves power conversion efficiency, especially suitable for low-voltage and high-efficiency power supply design.
#### 2. **Battery Management System (BMS)**:
Due to its efficient switching performance, this MOSFET is particularly suitable for load switching and battery protection applications in battery management systems. It can provide reliable switching control during battery charging and discharging, protecting the battery from adverse conditions such as overcurrent and overcharging. The dual-channel structure provides more flexible control of the battery power system and supports more efficient battery voltage and current regulation.
#### 3. **Load Switch**:
As a load switch element, the SI6544DQ-T1-GE3-VB performs well in low-power load control. Its low on-resistance and high current capability make it suitable for use as a load switch in portable devices, embedded systems or consumer electronics. Through efficient switching operation, it can help the system reduce heat generation and improve the overall performance of the device.
#### 4. **Inverter and Power Tool Power Management**:
In applications such as inverters and power tools, the SI6544DQ-T1-GE3-VB provides stable power management and efficient switching operation. The combination of P-Channel and N-Channel MOSFETs helps provide more efficient current control and reduce energy loss. Especially in the switching and power conversion of high-power loads, it can improve the overall system efficiency.
#### 5. **Power Regulation and Conversion Systems**:
In power regulators (such as high-efficiency power modules), SI6544DQ-T1-GE3-VB can reduce losses during the conversion process and improve power conversion efficiency. Especially in the fields of power tools, home appliances, automotive electronics, and industrial automation, efficient energy conversion and current control are required. The use of this MOSFET can effectively reduce switching losses and improve system reliability and stability.
### Summary:
SI6544DQ-T1-GE3-VB is a dual-channel MOSFET with superior performance and low power consumption. It is suitable for various high-efficiency power management applications, especially synchronous rectification, battery management, power conversion, and load switch modules. Its low on-resistance, high current carrying capacity, and reliable switching characteristics make it an ideal choice for efficient and reliable circuit design in many fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
