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SI6543DQ-T1-GE3-VB Product details

Product introduction:

Product Introduction

**SI6543DQ-T1-GE3-VB** is a high-efficiency **Dual-N+P-Channel** MOSFET** launched by **Vishay**, using **TSSOP8** package. The design of this MOSFET is based on **Trench** technology, with extremely low on-resistance, suitable for various applications requiring high efficiency, high current density and fast switching performance. Its **VDS** range is **±30V**, and it has **extremely low on-resistance** at **VGS = 4.5V** and **VGS = 10V**, which are **2mΩ** and **7mΩ** (N-Channel) and **14mΩ** and **2mΩ** (P-Channel), respectively, so that it can provide higher current output with lower power loss, suitable for high-efficiency power supply systems and load control. **Vth** (threshold voltage) is **2V** (N-Channel) and **-2V** (P-Channel), respectively, providing more sensitive switching performance. The device's maximum drain current (ID) is **6.2A** (N-Channel) and **5A** (P-Channel), ensuring stable operation even under high loads. Its low on-resistance and fast response characteristics make it an ideal choice for many power control systems and power management applications.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
TSSOP8 Dual-N+P ±30V 2/-2V 6.2/5A 2/7mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
TSSOP8 Dual-N+P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
TSSOP8 Dual-N+P ±30V 2/-2V 6.2/5A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
TSSOP8 Dual-N+P ±30V 2/-2V 6.2/5A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
TSSOP8 Dual-N+P
Detailed parameter description

| **Parameter** | **Value** |
|-----------------------|----------------------------|
| **Model** | SI6543DQ-T1-GE3-VB |
| **Package** | TSSOP8 |
| **Configuration** | Dual-N+P-Channel |
| **Maximum drain-source voltage (VDS)** | ±30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | 2V (N-Channel), -2V (P-Channel) |
| **On-resistance (RDS(ON))** | 2mΩ / 14mΩ (VGS = 4.5V, N/P Channel) |
| | 2mΩ / 7mΩ (VGS = 10V, N/P Channel) |
| **Maximum drain current (ID)** | 6.2A (N-Channel), 5A (P-Channel) |
| **Technology** | Trench |
| **Maximum power loss (P_D)** | 2W |
| **Input capacitance (C_iss)** | 2000pF |
| **Output capacitance (C_oss)** | 250pF |
| **Reverse recovery time (T_rr)** | 25ns |

Domain and module applications:

Product application areas and module examples

1. **Power management and DC-DC converters**
- **Application examples**: SI6543DQ-T1-GE3-VB's **Dual-N+P-Channel** configuration makes it an ideal choice for high-efficiency **DC-DC converters**. Its low **RDS(ON)** and **fast switching characteristics** provide stable power output while reducing conversion losses, making it ideal for various **power management systems**, such as portable power, charging management, embedded device power, etc.
- **Module applications**: DC-DC power converters, low dropout regulators (LDO), battery management systems, USB power adapters, etc.

2. **Load switches and power control**
- **Application examples**: SI6543DQ-T1-GE3-VB has good performance in **load switch** applications, especially in situations where positive and negative currents need to be controlled simultaneously. Its **N+P-Channel** structure provides a more efficient load switching function and is commonly used in the fields of intelligent power switches, power switching, and battery protection.
- **Module applications**: load switches, power switching modules, overcurrent protection circuits, intelligent power management, etc.

3. **Battery Management System (BMS)**
- **Application Examples**: This MOSFET can be used in **Battery Management System (BMS)**, especially in battery charging and discharging path control. Due to its low on-resistance, fast response and high current handling capability, it can effectively improve battery charging and discharging efficiency and provide support for battery protection. It is particularly suitable for battery management in **electric vehicles** and **energy storage systems**.
- **Module applications**: battery charging management, power battery management, battery protection, energy storage system battery control, etc.

4. **Power tools and home appliances**
- **Application examples**: SI6543DQ-T1-GE3-VB is also very suitable for power control and drive systems of **power tools** and **home appliances**, providing stable current supply and fast switching response. In power tools, it can help improve power conversion efficiency and extend tool life.
- **Module applications**: Power tool drive, battery-powered tools, home appliances, smart electric devices, etc.

5. **Automotive electronics**
- **Application examples**: In **automotive electronics** applications, SI6543DQ-T1-GE3-VB is used in power management and load switching systems, especially in battery management of **electric vehicles** and **hybrid vehicles**. Its low **RDS(ON)** can reduce battery loss and enhance the endurance of electric vehicles while ensuring the safety of automotive batteries.
- **Module applications**: Electric vehicle battery management system (BMS), automotive power management unit (PMU), battery voltage conversion and regulation, etc.

6. **LED drive circuit**
- **Application example**: Due to its low on-resistance and efficient switching characteristics, SI6543DQ-T1-GE3-VB is also suitable for **LED drive circuit**. Especially in intelligent lighting systems that require efficient power regulation, this MOSFET can effectively control the current of the LED, ensure stable output and extend the service life of the lamp.
- **Module applications**: LED drive power supply, intelligent lighting system, energy-saving lamps, etc.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

Technical support:

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