中文
English
SI6469DQ-T1-GE3-VB Product details
Back to previous pageProduct introduction：
Product Introduction: SI6469DQ-T1-GE3-VB
SI6469DQ-T1-GE3-VB is a high-efficiency single P-channel MOSFET packaged in TSSOP8, suitable for -30V drain-source voltage (V_DS) and ±20V gate-source voltage (V_GS), and has a threshold voltage (V_th) of -1.7V. The device uses advanced Trench technology to achieve low on-resistance characteristics: 20mΩ at V_GS = 4.5V and 16mΩ at V_GS = 10V. The maximum drain current (I_D) of this MOSFET is -9A, which can provide stable performance in high-efficiency and low-power applications, and is very suitable for applications such as power management, load switching and reverse current protection.
SI6469DQ-T1-GE3-VB is a high-efficiency single P-channel MOSFET packaged in TSSOP8, suitable for -30V drain-source voltage (V_DS) and ±20V gate-source voltage (V_GS), and has a threshold voltage (V_th) of -1.7V. The device uses advanced Trench technology to achieve low on-resistance characteristics: 20mΩ at V_GS = 4.5V and 16mΩ at V_GS = 10V. The maximum drain current (I_D) of this MOSFET is -9A, which can provide stable performance in high-efficiency and low-power applications, and is very suitable for applications such as power management, load switching and reverse current protection.
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
Detailed parameter description
- **Package type**: TSSOP8
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (V_DS)**: -30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- 16mΩ @ V_GS = 10V
- 20mΩ @ V_GS = 4.5V
- **Maximum drain current (I_D)**: -9A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Package type**: TSSOP8
- **Configuration**: Single P-channel MOSFET
- **Drain-source voltage (V_DS)**: -30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: -1.7V
- **On-resistance (R_DS(ON))**:
- 16mΩ @ V_GS = 10V
- 20mΩ @ V_GS = 4.5V
- **Maximum drain current (I_D)**: -9A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
Applications and module examples
**1. Power management system **
SI6469DQ-T1-GE3-VB's P-channel configuration and low on-resistance make it ideal for various power management systems, especially when high-efficiency switching is required. For example, the device can act as a load switch in a power distribution module to ensure smooth current flow and effectively control voltage conversion. This feature is particularly important in portable devices and small appliances, which can effectively improve device energy efficiency and extend battery life.
**2. Reverse current protection **
In solar power management, vehicle power systems, and industrial equipment, SI6469DQ-T1-GE3-VB can be used as a reverse current protection device to prevent current from flowing in reverse to protect sensitive components and batteries in the system. The device can block reverse current from entering the system by responding quickly, providing stable protection for loads and power modules to ensure system safety.
**3. Battery management and load switching **
This MOSFET is suitable for use in battery-powered systems such as portable devices, smart homes, and IoT devices. Due to its low on-resistance and Trench technology, SI6469DQ-T1-GE3-VB can effectively control the current flow in the battery management system, reduce the loss during the switching process, and improve the efficiency of battery management. For example, in products such as smart bracelets and Bluetooth speakers, the device can be used as the main switch to manage the switching process of the power supply, helping to achieve precise power control and extend battery life.
**4. Industrial Automation and Control**
In industrial automation applications, such as motor control and control module drive, SI6469DQ-T1-GE3-VB can be used to drive and control loads. Its high efficiency and low power consumption make it an ideal choice for many industrial applications. The device can operate stably in the control module of industrial automation equipment, providing efficient power management and switching control for various control systems.
**5. Automotive Electronics**
SI6469DQ-T1-GE3-VB can also be used in automotive electronic systems to provide solutions for power supply management of vehicle-mounted equipment. For example, it can be used in automotive electronic control units (ECUs), power distribution modules, and power door and window systems. The high reliability and low on-resistance characteristics of MOSFET can provide stable power supply in automotive systems, reduce power loss under the demand for efficient switching, and ensure the stability of the equipment under various temperature conditions.
**1. Power management system **
SI6469DQ-T1-GE3-VB's P-channel configuration and low on-resistance make it ideal for various power management systems, especially when high-efficiency switching is required. For example, the device can act as a load switch in a power distribution module to ensure smooth current flow and effectively control voltage conversion. This feature is particularly important in portable devices and small appliances, which can effectively improve device energy efficiency and extend battery life.
**2. Reverse current protection **
In solar power management, vehicle power systems, and industrial equipment, SI6469DQ-T1-GE3-VB can be used as a reverse current protection device to prevent current from flowing in reverse to protect sensitive components and batteries in the system. The device can block reverse current from entering the system by responding quickly, providing stable protection for loads and power modules to ensure system safety.
**3. Battery management and load switching **
This MOSFET is suitable for use in battery-powered systems such as portable devices, smart homes, and IoT devices. Due to its low on-resistance and Trench technology, SI6469DQ-T1-GE3-VB can effectively control the current flow in the battery management system, reduce the loss during the switching process, and improve the efficiency of battery management. For example, in products such as smart bracelets and Bluetooth speakers, the device can be used as the main switch to manage the switching process of the power supply, helping to achieve precise power control and extend battery life.
**4. Industrial Automation and Control**
In industrial automation applications, such as motor control and control module drive, SI6469DQ-T1-GE3-VB can be used to drive and control loads. Its high efficiency and low power consumption make it an ideal choice for many industrial applications. The device can operate stably in the control module of industrial automation equipment, providing efficient power management and switching control for various control systems.
**5. Automotive Electronics**
SI6469DQ-T1-GE3-VB can also be used in automotive electronic systems to provide solutions for power supply management of vehicle-mounted equipment. For example, it can be used in automotive electronic control units (ECUs), power distribution modules, and power door and window systems. The high reliability and low on-resistance characteristics of MOSFET can provide stable power supply in automotive systems, reduce power loss under the demand for efficient switching, and ensure the stability of the equipment under various temperature conditions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
