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SI6467DQ-VB Product details
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**SI6467DQ-VB MOSFET Product Introduction**
**Model**: SI6467DQ-VB
**Package Type**: TSSOP8
**Configuration**: Single-P-Channel
**Technology**: Trench
**Maximum Drain-Source Voltage (VDS)**: -30V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: -1.7V
**On-Resistance (RDS(ON))**:
- **16mΩ** @VGS=10V
- **20mΩ** @VGS=4.5V
**Maximum Drain Current (ID)**: -9A
SI6467DQ-VB It is a single P-channel MOSFET manufactured using Trench technology, designed for low voltage power switching and high-efficiency power management applications. It can be turned on at a low gate voltage and has a very low on-resistance, making it suitable for power systems that require high efficiency and low power consumption.
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**Model**: SI6467DQ-VB
**Package Type**: TSSOP8
**Configuration**: Single-P-Channel
**Technology**: Trench
**Maximum Drain-Source Voltage (VDS)**: -30V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: -1.7V
**On-Resistance (RDS(ON))**:
- **16mΩ** @VGS=10V
- **20mΩ** @VGS=4.5V
**Maximum Drain Current (ID)**: -9A
SI6467DQ-VB It is a single P-channel MOSFET manufactured using Trench technology, designed for low voltage power switching and high-efficiency power management applications. It can be turned on at a low gate voltage and has a very low on-resistance, making it suitable for power systems that require high efficiency and low power consumption.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
**SI6467DQ-VB MOSFET Detailed Parameter Description**
- **Package Type**: TSSOP8
- The TSSOP8 package has a compact size and high packaging density, suitable for applications with limited space but requiring efficient heat dissipation.
- **Configuration**: Single-P-Channel
- This configuration makes it very suitable for negative voltage control systems, especially in negative power systems, reverse current protection and battery management, and can effectively handle the direction of current flow.
- **VDS (drain-source voltage)**: -30V
- This MOSFET supports a maximum drain-source voltage of -30V, which is suitable for low-voltage power systems and can work efficiently in circuits with different voltage requirements.
- **VGS (gate-source voltage)**: ±20V
- Supports a gate voltage of ±20V to ensure that the MOSFET works stably in a variety of power control circuits.
- **Vth (threshold voltage)**: -1.7V
- With a lower threshold voltage, it can be turned on at a lower gate voltage, suitable for fast response switching applications.
- **RDS(ON)** (on-resistance):
- **16mΩ** @VGS=10V
- **20mΩ** @VGS=4.5V
- The extremely low on-resistance greatly reduces the heat and power loss generated during operation, ensuring high efficiency and reliability of the system.
- **ID (drain current)**:
- **-9A**
- Supports drain currents up to 9A, suitable for use in applications with higher power requirements, providing reliable current carrying capacity.
---
- **Package Type**: TSSOP8
- The TSSOP8 package has a compact size and high packaging density, suitable for applications with limited space but requiring efficient heat dissipation.
- **Configuration**: Single-P-Channel
- This configuration makes it very suitable for negative voltage control systems, especially in negative power systems, reverse current protection and battery management, and can effectively handle the direction of current flow.
- **VDS (drain-source voltage)**: -30V
- This MOSFET supports a maximum drain-source voltage of -30V, which is suitable for low-voltage power systems and can work efficiently in circuits with different voltage requirements.
- **VGS (gate-source voltage)**: ±20V
- Supports a gate voltage of ±20V to ensure that the MOSFET works stably in a variety of power control circuits.
- **Vth (threshold voltage)**: -1.7V
- With a lower threshold voltage, it can be turned on at a lower gate voltage, suitable for fast response switching applications.
- **RDS(ON)** (on-resistance):
- **16mΩ** @VGS=10V
- **20mΩ** @VGS=4.5V
- The extremely low on-resistance greatly reduces the heat and power loss generated during operation, ensuring high efficiency and reliability of the system.
- **ID (drain current)**:
- **-9A**
- Supports drain currents up to 9A, suitable for use in applications with higher power requirements, providing reliable current carrying capacity.
---
Domain and module applications：
**Application fields and modules of SI6467DQ-VB MOSFET**
1. **Battery Management System (BMS)**:
SI6467DQ-VB can be used in battery charge and discharge control and protection circuits in battery management systems, especially in portable battery devices and battery protection modules. Low on-resistance and stable switching characteristics help improve battery efficiency, extend battery life, and protect batteries from overcurrent and overvoltage.
2. **Load Switch Circuit**:
In load switch circuits, the low RDS(ON) of this MOSFET ensures high efficiency of power control. In systems requiring efficient power management and low power operation, it can be used as a power switch to perform switching control efficiently and stably in low voltage applications.
3. **DC-DC Converter**:
In DC-DC converters, SI6467DQ-VB can be used as a synchronous rectification switch to provide efficient power conversion. Its low on-resistance helps reduce heat and power loss during the conversion process, allowing the system to convert voltage more efficiently.
4. **Consumer Electronics**:
In smartphones, tablets, portable audio and other consumer electronics, SI6467DQ-VB can be used for switching and protecting the power path. Its excellent switching performance and low power consumption ensure high efficiency and long battery life of these devices during operation.
5. **Power Control and Protection Module**:
SI6467DQ-VB is suitable for load switching, overcurrent protection and reverse current protection circuits in power control and protection modules. It can effectively prevent short circuits, overcurrent and other problems, and improve the stability and reliability of the entire power system.
6. **High-efficiency power management module**:
In scenarios where high-efficiency power management is required, such as communication base stations, power tools, and vehicle power supplies, the SI6467DQ-VB MOSFET can be used as an efficient power control element to reduce energy loss and optimize the efficiency of the entire power system.
7. **Automotive electronics**:
This MOSFET is also suitable for automotive electronics, especially in battery management, power switching, load control, etc. The low on-resistance and high current carrying capacity enable it to work effectively in the automotive power system and provide a stable power supply.
1. **Battery Management System (BMS)**:
SI6467DQ-VB can be used in battery charge and discharge control and protection circuits in battery management systems, especially in portable battery devices and battery protection modules. Low on-resistance and stable switching characteristics help improve battery efficiency, extend battery life, and protect batteries from overcurrent and overvoltage.
2. **Load Switch Circuit**:
In load switch circuits, the low RDS(ON) of this MOSFET ensures high efficiency of power control. In systems requiring efficient power management and low power operation, it can be used as a power switch to perform switching control efficiently and stably in low voltage applications.
3. **DC-DC Converter**:
In DC-DC converters, SI6467DQ-VB can be used as a synchronous rectification switch to provide efficient power conversion. Its low on-resistance helps reduce heat and power loss during the conversion process, allowing the system to convert voltage more efficiently.
4. **Consumer Electronics**:
In smartphones, tablets, portable audio and other consumer electronics, SI6467DQ-VB can be used for switching and protecting the power path. Its excellent switching performance and low power consumption ensure high efficiency and long battery life of these devices during operation.
5. **Power Control and Protection Module**:
SI6467DQ-VB is suitable for load switching, overcurrent protection and reverse current protection circuits in power control and protection modules. It can effectively prevent short circuits, overcurrent and other problems, and improve the stability and reliability of the entire power system.
6. **High-efficiency power management module**:
In scenarios where high-efficiency power management is required, such as communication base stations, power tools, and vehicle power supplies, the SI6467DQ-VB MOSFET can be used as an efficient power control element to reduce energy loss and optimize the efficiency of the entire power system.
7. **Automotive electronics**:
This MOSFET is also suitable for automotive electronics, especially in battery management, power switching, load control, etc. The low on-resistance and high current carrying capacity enable it to work effectively in the automotive power system and provide a stable power supply.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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