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SI6463BDQ-T1-E3-VB Product details
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Product Introduction
**SI6463BDQ-T1-E3-VB** is a **single P-channel MOSFET**, packaged as **TSSOP8**, using **Trench process**, with **low on-resistance** and **high current carrying capacity**. The **maximum drain-source voltage (VDS)** of this MOSFET is **-30V**, and supports **±20V** gate-source voltage (VGS). Its gate threshold voltage (Vth) is **-1.7V**, and the on-resistance is **20mΩ** at a **4.5V** gate voltage, and **16mΩ** at a **10V** gate voltage. The maximum drain current of this MOSFET is **-9A**, which is suitable for various low-power applications, especially in **battery management, power switching** and **load switching**, providing high-efficiency current regulation and protection functions.
**SI6463BDQ-T1-E3-VB** is a **single P-channel MOSFET**, packaged as **TSSOP8**, using **Trench process**, with **low on-resistance** and **high current carrying capacity**. The **maximum drain-source voltage (VDS)** of this MOSFET is **-30V**, and supports **±20V** gate-source voltage (VGS). Its gate threshold voltage (Vth) is **-1.7V**, and the on-resistance is **20mΩ** at a **4.5V** gate voltage, and **16mΩ** at a **10V** gate voltage. The maximum drain current of this MOSFET is **-9A**, which is suitable for various low-power applications, especially in **battery management, power switching** and **load switching**, providing high-efficiency current regulation and protection functions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
Detailed parameter description
- **Model**: SI6463BDQ-T1-E3-VB
- **Package type**: TSSOP8
- **Configuration**: Single P channel
- **VDS (drain-source voltage)**: -30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: -1.7V
- **RDS(ON) on-resistance**:
- At 4.5V gate voltage: 20mΩ
- At 10V gate voltage: 16mΩ
- **ID (maximum drain current)**: -9A
- **Technology**: Trench (channel process)
- **Model**: SI6463BDQ-T1-E3-VB
- **Package type**: TSSOP8
- **Configuration**: Single P channel
- **VDS (drain-source voltage)**: -30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: -1.7V
- **RDS(ON) on-resistance**:
- At 4.5V gate voltage: 20mΩ
- At 10V gate voltage: 16mΩ
- **ID (maximum drain current)**: -9A
- **Technology**: Trench (channel process)
Domain and module applications：
Applications and module examples
1. **Battery Management System (BMS)**: **SI6463BDQ-T1-E3-VB** is a **P-channel MOSFET**, which is very suitable for **battery management systems**, especially in **battery protection** and **charging circuits**, to ensure the stability of the battery during charging and discharging. Its low on-resistance characteristics can effectively reduce power loss and extend battery life, and is particularly suitable for **power tools, electric bicycles, lead-free battery chargers** and other equipment.
2. **Power Switching and Load Switching**: **SI6463BDQ-T1-E3-VB** can be used as an efficient switching element in **power switching** and **load switching** applications. In **DC-DC converters, regulators** and **power management modules**, it provides stable power output through low on-resistance and high current carrying capacity. This makes this MOSFET an ideal choice for power management in consumer electronics such as **computer power supplies, TV power supplies**.
3. **LED drive circuit**: In **LED drive circuit**, **SI6463BDQ-T1-E3-VB** can be used for current regulation, especially for efficient current control in **LED lighting systems**. Its low on-resistance ensures efficient current switching, which improves overall lighting efficiency while extending **LED lighting** life.
4. **DC-DC converter**: This MOSFET is suitable for current switching and voltage regulation in **DC-DC converter**, especially in **Buck** and **Boost** converters. **SI6463BDQ-T1-E3-VB**'s low on-resistance reduces power loss and improves conversion efficiency, and performs well in **portable devices, automotive power modules** and other applications.
5. **Automotive electronic systems**: In **automotive electronic systems**, **SI6463BDQ-T1-E3-VB** can be used in **battery management, automotive power control, overcurrent protection** and other modules. Its stable current control capability makes it an ideal choice for **electric vehicle battery management systems, vehicle power management modules** and other applications.
6. **Industrial control and automation**: This MOSFET can be used for **power switching, load regulation, switching power supply** and other functions in **industrial automation control systems**. With its high efficiency and low on-resistance, it can effectively implement power management in **industrial equipment, PLC control systems, and automated production lines**, reduce energy loss, and improve overall system efficiency.
7. **Communication equipment power management**: **SI6463BDQ-T1-E3-VB** is widely used in power management modules in **wireless communication equipment** and **network equipment**, and can provide stable current and voltage control. In **switches, routers, fiber optic communication equipment** and other network equipment, it can optimize power management and reduce current fluctuations to ensure the reliability and long-term operation of the equipment.
8. **Low-power electronic devices**: Due to the low on-resistance of this MOSFET, it is suitable for **low-power electronic devices**, such as **smart homes, smart sensors, portable devices** and other fields. It can provide high-efficiency switching in low-power devices such as **power amplifiers, signal conditioners**, ensuring long-term stable operation of the equipment.
9. **High-efficiency power management**: In **high-efficiency power management systems**, **SI6463BDQ-T1-E3-VB** can be used for **load switching, power regulation, overcurrent protection**, etc. Its low on-resistance and high current capability give it great advantages in **battery-powered devices, portable power modules, smart power management** and other applications.
1. **Battery Management System (BMS)**: **SI6463BDQ-T1-E3-VB** is a **P-channel MOSFET**, which is very suitable for **battery management systems**, especially in **battery protection** and **charging circuits**, to ensure the stability of the battery during charging and discharging. Its low on-resistance characteristics can effectively reduce power loss and extend battery life, and is particularly suitable for **power tools, electric bicycles, lead-free battery chargers** and other equipment.
2. **Power Switching and Load Switching**: **SI6463BDQ-T1-E3-VB** can be used as an efficient switching element in **power switching** and **load switching** applications. In **DC-DC converters, regulators** and **power management modules**, it provides stable power output through low on-resistance and high current carrying capacity. This makes this MOSFET an ideal choice for power management in consumer electronics such as **computer power supplies, TV power supplies**.
3. **LED drive circuit**: In **LED drive circuit**, **SI6463BDQ-T1-E3-VB** can be used for current regulation, especially for efficient current control in **LED lighting systems**. Its low on-resistance ensures efficient current switching, which improves overall lighting efficiency while extending **LED lighting** life.
4. **DC-DC converter**: This MOSFET is suitable for current switching and voltage regulation in **DC-DC converter**, especially in **Buck** and **Boost** converters. **SI6463BDQ-T1-E3-VB**'s low on-resistance reduces power loss and improves conversion efficiency, and performs well in **portable devices, automotive power modules** and other applications.
5. **Automotive electronic systems**: In **automotive electronic systems**, **SI6463BDQ-T1-E3-VB** can be used in **battery management, automotive power control, overcurrent protection** and other modules. Its stable current control capability makes it an ideal choice for **electric vehicle battery management systems, vehicle power management modules** and other applications.
6. **Industrial control and automation**: This MOSFET can be used for **power switching, load regulation, switching power supply** and other functions in **industrial automation control systems**. With its high efficiency and low on-resistance, it can effectively implement power management in **industrial equipment, PLC control systems, and automated production lines**, reduce energy loss, and improve overall system efficiency.
7. **Communication equipment power management**: **SI6463BDQ-T1-E3-VB** is widely used in power management modules in **wireless communication equipment** and **network equipment**, and can provide stable current and voltage control. In **switches, routers, fiber optic communication equipment** and other network equipment, it can optimize power management and reduce current fluctuations to ensure the reliability and long-term operation of the equipment.
8. **Low-power electronic devices**: Due to the low on-resistance of this MOSFET, it is suitable for **low-power electronic devices**, such as **smart homes, smart sensors, portable devices** and other fields. It can provide high-efficiency switching in low-power devices such as **power amplifiers, signal conditioners**, ensuring long-term stable operation of the equipment.
9. **High-efficiency power management**: In **high-efficiency power management systems**, **SI6463BDQ-T1-E3-VB** can be used for **load switching, power regulation, overcurrent protection**, etc. Its low on-resistance and high current capability give it great advantages in **battery-powered devices, portable power modules, smart power management** and other applications.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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