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SI6447DQ-T1-E3-VB Product details
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Product Introduction: SI6447DQ-T1-E3-VB
SI6447DQ-T1-E3-VB is a unipolar P-channel MOSFET in TSSOP8 package. It is designed for low voltage applications and has excellent switching performance and low on-resistance. The operating voltage of this MOSFET is -30V, VGS can be adjusted to ±20V, Vth is -1.7V, and the maximum drain current is -9A. It is suitable for power management and drive circuits that require high efficiency and low power consumption. This product uses Trench technology, which can provide lower on-resistance (RDS(ON)) at lower gate voltage, thereby effectively improving the overall energy efficiency of the system.
SI6447DQ-T1-E3-VB is a unipolar P-channel MOSFET in TSSOP8 package. It is designed for low voltage applications and has excellent switching performance and low on-resistance. The operating voltage of this MOSFET is -30V, VGS can be adjusted to ±20V, Vth is -1.7V, and the maximum drain current is -9A. It is suitable for power management and drive circuits that require high efficiency and low power consumption. This product uses Trench technology, which can provide lower on-resistance (RDS(ON)) at lower gate voltage, thereby effectively improving the overall energy efficiency of the system.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
Detailed parameter description:
- **Package type**: TSSOP8
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 16mΩ (VGS = 10V)
- 20mΩ (VGS = 4.5V)
- **Maximum drain current (ID)**: -9A
- **Technology**: Trench technology
This MOSFET has an extremely low RDS(ON) value when VGS is 4.5V or 10V, which can effectively reduce power loss and is suitable for high-efficiency power supplies, power conversion and drive circuits.
- **Package type**: TSSOP8
- **Configuration**: Single-P-Channel
- **Drain-source voltage (VDS)**: -30V
- **Gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 16mΩ (VGS = 10V)
- 20mΩ (VGS = 4.5V)
- **Maximum drain current (ID)**: -9A
- **Technology**: Trench technology
This MOSFET has an extremely low RDS(ON) value when VGS is 4.5V or 10V, which can effectively reduce power loss and is suitable for high-efficiency power supplies, power conversion and drive circuits.
Domain and module applications：
Applications and modules:
1. **Power management**:
This MOSFET is suitable for power management modules (such as DC-DC converters, regulated power supplies), especially for applications that require efficient switching performance and low power loss. Its low RDS(ON) value can effectively reduce heat and energy consumption under frequent switching working conditions.
2. **Motor drive**:
In motor drive applications, such as BLDC (brushless DC motor) or stepper motor drivers, this MOSFET can be used as a current switching device. Its fast response and low on-resistance can improve the efficiency and accuracy of motor control systems.
3. **Load switch circuit**:
In load switch circuits, SI6447DQ-T1-E3-VB can be used as an efficient load switch to provide reliable power management, especially for efficient battery management and power switching functions, such as portable devices and consumer electronics.
4. **High-efficiency load isolation**:
Suitable for applications where the power supply and load are isolated by an efficient switch, such as when used in a high-efficiency battery-powered system, it can effectively extend the battery life and reduce overall energy loss.
5. **Power amplification and load drive**:
In high-efficiency power amplifier and load drive modules, using this MOSFET as an output stage component can achieve fast switching and low power loss, suitable for communication, radio frequency (RF) and audio amplification systems.
1. **Power management**:
This MOSFET is suitable for power management modules (such as DC-DC converters, regulated power supplies), especially for applications that require efficient switching performance and low power loss. Its low RDS(ON) value can effectively reduce heat and energy consumption under frequent switching working conditions.
2. **Motor drive**:
In motor drive applications, such as BLDC (brushless DC motor) or stepper motor drivers, this MOSFET can be used as a current switching device. Its fast response and low on-resistance can improve the efficiency and accuracy of motor control systems.
3. **Load switch circuit**:
In load switch circuits, SI6447DQ-T1-E3-VB can be used as an efficient load switch to provide reliable power management, especially for efficient battery management and power switching functions, such as portable devices and consumer electronics.
4. **High-efficiency load isolation**:
Suitable for applications where the power supply and load are isolated by an efficient switch, such as when used in a high-efficiency battery-powered system, it can effectively extend the battery life and reduce overall energy loss.
5. **Power amplification and load drive**:
In high-efficiency power amplifier and load drive modules, using this MOSFET as an output stage component can achieve fast switching and low power loss, suitable for communication, radio frequency (RF) and audio amplification systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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