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SI6435DQ-T1-GE3-VB Product details
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SI6435DQ-T1-GE3-VB Product Introduction
SI6435DQ-T1-GE3-VB is a MOSFET with a unipolar P-type structure, using a TSSOP8 package, suitable for low-voltage and high-current applications. This product uses Trench technology, has a low on-resistance and a high current handling capability, and is suitable for efficient power management. This MOSFET has a VDS of -30V and a low on-resistance (RDS(ON) is 16mΩ@VGS=10V), which can provide good performance in various power management, battery management, and electric vehicles. Its small package size enables it to perform well in space-constrained applications.
SI6435DQ-T1-GE3-VB is a MOSFET with a unipolar P-type structure, using a TSSOP8 package, suitable for low-voltage and high-current applications. This product uses Trench technology, has a low on-resistance and a high current handling capability, and is suitable for efficient power management. This MOSFET has a VDS of -30V and a low on-resistance (RDS(ON) is 16mΩ@VGS=10V), which can provide good performance in various power management, battery management, and electric vehicles. Its small package size enables it to perform well in space-constrained applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
Detailed parameter description
| **Parameter** | **Value** |
|---------------------|---------------------------------|
| **Package** | TSSOP8 |
| **Configuration** | Single P-type channel|
| **Maximum drain-source voltage (VDS)** | -30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | -1.7V |
| **On-resistance (RDS(ON))** | 20mΩ@VGS=4.5V，16mΩ@VGS=10V |
| **Maximum drain current (ID)** | -9A |
| **Technology** | Trench |
| **Parameter** | **Value** |
|---------------------|---------------------------------|
| **Package** | TSSOP8 |
| **Configuration** | Single P-type channel|
| **Maximum drain-source voltage (VDS)** | -30V |
| **Gate-source voltage (VGS)** | ±20V |
| **Threshold voltage (Vth)** | -1.7V |
| **On-resistance (RDS(ON))** | 20mΩ@VGS=4.5V，16mΩ@VGS=10V |
| **Maximum drain current (ID)** | -9A |
| **Technology** | Trench |
Domain and module applications：
Applicable fields and modules
1. **Power management module**:
SI6435DQ-T1-GE3-VB performs well in power management modules, especially DC-DC converters and voltage regulator modules. Due to its low RDS(ON) and high current carrying capacity, this MOSFET can be used for efficient power conversion and power management, which helps to reduce power loss and improve overall system efficiency. For example, in devices such as vehicle power modules and home appliance power adapters, it can provide a stable power supply.
2. **Battery Management System (BMS)**:
Due to its low on-resistance and high current carrying capacity, SI6435DQ-T1-GE3-VB is also very suitable for battery management systems. Especially in the charge and discharge management of lithium batteries, the efficient switching characteristics of MOSFET can optimize the battery charging and discharging process, extend battery life and improve energy efficiency.
3. **Electric Vehicle (EV) Field**:
In electric vehicle (EV) drive systems, SI6435DQ-T1-GE3-VB can be used for battery power management and motor control systems. Electric vehicles have stringent requirements for high efficiency and high power density, and the low RDS(ON) and high current carrying capacity of this MOSFET enable it to provide excellent performance in such applications, especially in battery voltage conversion, power switching and drive circuits.
4. **Inverter and Battery Energy Storage System**:
For inverters and battery energy storage systems that require efficient power conversion, SI6435DQ-T1-GE3-VB can provide stable current control in these applications, especially during energy conversion and power transmission. Due to its excellent switching characteristics and low on-resistance, it can significantly reduce energy losses and improve the overall efficiency of the system.
5. **High-efficiency switching power supply (SMPS)**:
In high-efficiency switching power supply systems, SI6435DQ-T1-GE3-VB can be applied to low-voltage and high-current switching circuits, especially in power supply designs that require high efficiency and high density. For example, as a P-type MOSFET for power conversion and output regulation, it can achieve precise voltage control and low-loss power conversion.
By using this MOSFET, system designers can achieve efficient power control and energy transmission in multiple fields to meet the low power consumption and high performance requirements of modern electronic products.
1. **Power management module**:
SI6435DQ-T1-GE3-VB performs well in power management modules, especially DC-DC converters and voltage regulator modules. Due to its low RDS(ON) and high current carrying capacity, this MOSFET can be used for efficient power conversion and power management, which helps to reduce power loss and improve overall system efficiency. For example, in devices such as vehicle power modules and home appliance power adapters, it can provide a stable power supply.
2. **Battery Management System (BMS)**:
Due to its low on-resistance and high current carrying capacity, SI6435DQ-T1-GE3-VB is also very suitable for battery management systems. Especially in the charge and discharge management of lithium batteries, the efficient switching characteristics of MOSFET can optimize the battery charging and discharging process, extend battery life and improve energy efficiency.
3. **Electric Vehicle (EV) Field**:
In electric vehicle (EV) drive systems, SI6435DQ-T1-GE3-VB can be used for battery power management and motor control systems. Electric vehicles have stringent requirements for high efficiency and high power density, and the low RDS(ON) and high current carrying capacity of this MOSFET enable it to provide excellent performance in such applications, especially in battery voltage conversion, power switching and drive circuits.
4. **Inverter and Battery Energy Storage System**:
For inverters and battery energy storage systems that require efficient power conversion, SI6435DQ-T1-GE3-VB can provide stable current control in these applications, especially during energy conversion and power transmission. Due to its excellent switching characteristics and low on-resistance, it can significantly reduce energy losses and improve the overall efficiency of the system.
5. **High-efficiency switching power supply (SMPS)**:
In high-efficiency switching power supply systems, SI6435DQ-T1-GE3-VB can be applied to low-voltage and high-current switching circuits, especially in power supply designs that require high efficiency and high density. For example, as a P-type MOSFET for power conversion and output regulation, it can achieve precise voltage control and low-loss power conversion.
By using this MOSFET, system designers can achieve efficient power control and energy transmission in multiple fields to meet the low power consumption and high performance requirements of modern electronic products.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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