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SI6435ADQ-T1-VB Product details
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1. Product Introduction:
**SI6435ADQ-T1-VB** is a single P-channel MOSFET in TSSOP8 package. It has low on-resistance and high current carrying capacity, suitable for high-efficiency switching and low-power applications. The maximum drain-source voltage (VDS) of this MOSFET is -30V, the maximum gate-source voltage (VGS) is ±20V, the operating gate-source threshold voltage (Vth) is -1.7V, and the maximum drain current (ID) is -9A. Its on-resistance (RDS(ON)) is 20mΩ at VGS=4.5V and 16mΩ at VGS=10V. It has the characteristics of low power consumption and high efficiency, and is widely used in load switching, battery management, synchronous rectification and other fields.
**SI6435ADQ-T1-VB** is a single P-channel MOSFET in TSSOP8 package. It has low on-resistance and high current carrying capacity, suitable for high-efficiency switching and low-power applications. The maximum drain-source voltage (VDS) of this MOSFET is -30V, the maximum gate-source voltage (VGS) is ±20V, the operating gate-source threshold voltage (Vth) is -1.7V, and the maximum drain current (ID) is -9A. Its on-resistance (RDS(ON)) is 20mΩ at VGS=4.5V and 16mΩ at VGS=10V. It has the characteristics of low power consumption and high efficiency, and is widely used in load switching, battery management, synchronous rectification and other fields.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
2. Detailed parameter description:
- **Model**: SI6435ADQ-T1-VB
- **Package type**: TSSOP8
- **Configuration**: Single P channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 20mΩ (at VGS = 4.5V)
- 16mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: -9A
- **Technology**: Trench process
- **Model**: SI6435ADQ-T1-VB
- **Package type**: TSSOP8
- **Configuration**: Single P channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Gate-source threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- 20mΩ (at VGS = 4.5V)
- 16mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: -9A
- **Technology**: Trench process
Domain and module applications：
3. Application fields and modules:
#### 1. **Battery management and protection circuit**:
SI6435ADQ-T1-VB can be used for load switching and battery protection in battery management systems to help ensure that the battery is protected from overcharge, overdischarge or short circuit, etc., to avoid battery damage. Its low RDS(ON) characteristics and high current carrying capacity make it suitable for use in smart batteries, portable power devices, mobile electronics and UPS systems, providing efficient power management and protection.
#### 2. **Load switch**:
This MOSFET is suitable for low-power load switch applications, which can effectively control the current flow and reduce power loss. SI6435ADQ-T1-VB has a low on-resistance at VGS=10V, which is suitable for load switch applications that require low power consumption and efficient switching, such as embedded systems, battery-driven devices, smart home devices, etc.
#### 3. **Synchronous Rectification Power Supply**:
Due to its low RDS(ON) characteristics, this MOSFET is very suitable for synchronous rectification applications, especially in DC-DC converters. It can reduce power loss and improve power conversion efficiency. SI6435ADQ-T1-VB can be applied to high-efficiency power modules, LED driver power supplies, power tool power supplies, communication power supplies and other high-efficiency power systems.
#### 4. **Reverse Current Protection and Switching**:
SI6435ADQ-T1-VB can be used as a switching element in a reverse current protection circuit. In battery protection, inverters, and UPS systems, reverse current protection prevents battery over-discharge or reverse current flow to ensure system safety and stability. Its high current carrying capacity enables it to cope with large current changes and is suitable for use in harsh current fluctuation environments.
#### 5. **High-efficiency switching power supply system**:
In an efficient switching power supply system, SI6435ADQ-T1-VB can provide stable switching performance and reduce switching losses. This MOSFET can be widely used in systems such as small power modules, power tools, home appliances, consumer electronics, and automotive electronic devices, providing stable power conversion efficiency and reliable current control.
### Summary:
SI6435ADQ-T1-VB is a single P-channel MOSFET with low on-resistance and high current carrying capacity, suitable for various low-voltage power management, load switching and synchronous rectification applications. Its efficient switching performance and low power loss make it widely used in mobile devices, battery management systems, power modules and other fields.
#### 1. **Battery management and protection circuit**:
SI6435ADQ-T1-VB can be used for load switching and battery protection in battery management systems to help ensure that the battery is protected from overcharge, overdischarge or short circuit, etc., to avoid battery damage. Its low RDS(ON) characteristics and high current carrying capacity make it suitable for use in smart batteries, portable power devices, mobile electronics and UPS systems, providing efficient power management and protection.
#### 2. **Load switch**:
This MOSFET is suitable for low-power load switch applications, which can effectively control the current flow and reduce power loss. SI6435ADQ-T1-VB has a low on-resistance at VGS=10V, which is suitable for load switch applications that require low power consumption and efficient switching, such as embedded systems, battery-driven devices, smart home devices, etc.
#### 3. **Synchronous Rectification Power Supply**:
Due to its low RDS(ON) characteristics, this MOSFET is very suitable for synchronous rectification applications, especially in DC-DC converters. It can reduce power loss and improve power conversion efficiency. SI6435ADQ-T1-VB can be applied to high-efficiency power modules, LED driver power supplies, power tool power supplies, communication power supplies and other high-efficiency power systems.
#### 4. **Reverse Current Protection and Switching**:
SI6435ADQ-T1-VB can be used as a switching element in a reverse current protection circuit. In battery protection, inverters, and UPS systems, reverse current protection prevents battery over-discharge or reverse current flow to ensure system safety and stability. Its high current carrying capacity enables it to cope with large current changes and is suitable for use in harsh current fluctuation environments.
#### 5. **High-efficiency switching power supply system**:
In an efficient switching power supply system, SI6435ADQ-T1-VB can provide stable switching performance and reduce switching losses. This MOSFET can be widely used in systems such as small power modules, power tools, home appliances, consumer electronics, and automotive electronic devices, providing stable power conversion efficiency and reliable current control.
### Summary:
SI6435ADQ-T1-VB is a single P-channel MOSFET with low on-resistance and high current carrying capacity, suitable for various low-voltage power management, load switching and synchronous rectification applications. Its efficient switching performance and low power loss make it widely used in mobile devices, battery management systems, power modules and other fields.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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