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SI6426DQ-T1-GE3-VB Product details
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Product Introduction: SI6426DQ-T1-GE3-VB
SI6426DQ-T1-GE3-VB is a single N-channel MOSFET in TSSOP8 package with a drain-source voltage (V_DS) of 30V and a gate-source voltage (V_GS) of ±20V. The threshold voltage (V_th) of this product is 1.7V, and it has excellent low on-resistance characteristics. Its R_DS(ON) is 14.4mΩ at V_GS = 4.5V and 12mΩ at V_GS = 10V, which can reduce power loss when working efficiently. The maximum drain current (I_D) is 8.5A, and it is manufactured using advanced Trench technology with excellent switching performance. SI6426DQ-T1-GE3-VB is suitable for a variety of applications such as low-power power management, battery-powered systems, load switches, etc., providing high-efficiency and low-power solutions.
SI6426DQ-T1-GE3-VB is a single N-channel MOSFET in TSSOP8 package with a drain-source voltage (V_DS) of 30V and a gate-source voltage (V_GS) of ±20V. The threshold voltage (V_th) of this product is 1.7V, and it has excellent low on-resistance characteristics. Its R_DS(ON) is 14.4mΩ at V_GS = 4.5V and 12mΩ at V_GS = 10V, which can reduce power loss when working efficiently. The maximum drain current (I_D) is 8.5A, and it is manufactured using advanced Trench technology with excellent switching performance. SI6426DQ-T1-GE3-VB is suitable for a variety of applications such as low-power power management, battery-powered systems, load switches, etc., providing high-efficiency and low-power solutions.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-N | 30V | 1.7V | 8.5A | 12mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-N | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-N | 30V | 1.7V | 8.5A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-N | 30V | 1.7V | 8.5A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-N |
Detailed parameter description
- **Package type**: TSSOP8
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 12mΩ @ V_GS = 10V
- 14.4mΩ @ V_GS = 4.5V
- **Maximum drain current (I_D)**: 8.5A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
- **Package type**: TSSOP8
- **Configuration**: Single N-channel MOSFET
- **Drain-source voltage (V_DS)**: 30V
- **Gate-source voltage (V_GS)**: ±20V
- **Threshold voltage (V_th)**: 1.7V
- **On-resistance (R_DS(ON))**:
- 12mΩ @ V_GS = 10V
- 14.4mΩ @ V_GS = 4.5V
- **Maximum drain current (I_D)**: 8.5A
- **Technology**: Trench technology
- **Operating temperature range**: -55°C to 150°C
Domain and module applications：
Applications and module examples
**1. Power management system **
The N-type MOSFET characteristics of SI6426DQ-T1-GE3-VB make it very suitable for switching and regulating voltage modules in power management systems. For example, in DC-DC converters, MOSFETs can effectively control current flow and convert voltage to ensure efficient power conversion. The low on-resistance of the device enables it to reduce losses during the conversion process and improve the overall efficiency of the system, especially for portable devices and low-power applications such as smartphones, tablets, etc.
**2. Battery management and load switch **
This MOSFET is also suitable for battery management systems, especially in portable devices. For example, in power tools, wearable devices, wireless headphones and other battery-powered devices, SI6426DQ-T1-GE3-VB can be used as a load switch or battery management switch element. Through efficient switching control, the safety of the battery during charging and discharging is ensured, while the battery current flow is effectively controlled to prevent problems such as overcharging and over-discharging.
**3. Reverse current protection**
SI6426DQ-T1-GE3-VB can be used for reverse current protection, especially in solar power generation systems or electric vehicle charging systems. In these applications, MOSFET can prevent the current from flowing in reverse, avoiding damage to the battery and other electronic components in the system. The fast response and low on-resistance characteristics of the device enable it to efficiently handle high power currents and provide stable protection functions.
**4. Automation and industrial applications**
In industrial automation equipment, SI6426DQ-T1-GE3-VB can be used to drive load control circuits. It can provide low on-resistance and high current handling capabilities in systems that require efficient switching control, especially in equipment that requires fast switching operations, such as motor control, solenoid valve control, etc. Its TSSOP8 package makes it suitable for space-compact board design and can provide efficient power management.
**5. On-board power management**
In automotive electronic systems, SI6426DQ-T1-GE3-VB can be used as a switching element in the power management module to handle the flow of power from the vehicle battery or generator. For example, in applications such as in-vehicle entertainment systems, electric power steering systems, and LED light control systems, MOSFETs can effectively regulate current and voltage to ensure the stability of power supply and efficient operation of the system.
**6. Low-power electronic devices**
This MOSFET is particularly suitable for low-power electronic products such as Bluetooth devices, wearable devices, wireless sensors, etc. Its low on-resistance and low power consumption characteristics enable it to extend battery life and optimize the energy efficiency of the system, adapting to increasingly stringent energy efficiency standards. In these devices, SI6426DQ-T1-GE3-VB as a power management switch can ensure stable operating performance while extending battery life.
**1. Power management system **
The N-type MOSFET characteristics of SI6426DQ-T1-GE3-VB make it very suitable for switching and regulating voltage modules in power management systems. For example, in DC-DC converters, MOSFETs can effectively control current flow and convert voltage to ensure efficient power conversion. The low on-resistance of the device enables it to reduce losses during the conversion process and improve the overall efficiency of the system, especially for portable devices and low-power applications such as smartphones, tablets, etc.
**2. Battery management and load switch **
This MOSFET is also suitable for battery management systems, especially in portable devices. For example, in power tools, wearable devices, wireless headphones and other battery-powered devices, SI6426DQ-T1-GE3-VB can be used as a load switch or battery management switch element. Through efficient switching control, the safety of the battery during charging and discharging is ensured, while the battery current flow is effectively controlled to prevent problems such as overcharging and over-discharging.
**3. Reverse current protection**
SI6426DQ-T1-GE3-VB can be used for reverse current protection, especially in solar power generation systems or electric vehicle charging systems. In these applications, MOSFET can prevent the current from flowing in reverse, avoiding damage to the battery and other electronic components in the system. The fast response and low on-resistance characteristics of the device enable it to efficiently handle high power currents and provide stable protection functions.
**4. Automation and industrial applications**
In industrial automation equipment, SI6426DQ-T1-GE3-VB can be used to drive load control circuits. It can provide low on-resistance and high current handling capabilities in systems that require efficient switching control, especially in equipment that requires fast switching operations, such as motor control, solenoid valve control, etc. Its TSSOP8 package makes it suitable for space-compact board design and can provide efficient power management.
**5. On-board power management**
In automotive electronic systems, SI6426DQ-T1-GE3-VB can be used as a switching element in the power management module to handle the flow of power from the vehicle battery or generator. For example, in applications such as in-vehicle entertainment systems, electric power steering systems, and LED light control systems, MOSFETs can effectively regulate current and voltage to ensure the stability of power supply and efficient operation of the system.
**6. Low-power electronic devices**
This MOSFET is particularly suitable for low-power electronic products such as Bluetooth devices, wearable devices, wireless sensors, etc. Its low on-resistance and low power consumption characteristics enable it to extend battery life and optimize the energy efficiency of the system, adapting to increasingly stringent energy efficiency standards. In these devices, SI6426DQ-T1-GE3-VB as a power management switch can ensure stable operating performance while extending battery life.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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