中文
English
SI6423DQ-T1-E3-VB Product details
Back to previous pageProduct introduction：
**SI6423DQ-T1-E3-VB MOSFET Product Introduction**
**Model**: SI6423DQ-T1-E3-VB
**Package Type**: TSSOP8
**Configuration**: Single-P-Channel
**Technology**: Trench
**Maximum Drain-Source Voltage (VDS)**: -30V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: -1.7V
**On-Resistance (RDS(ON))**:
- **16mΩ** @VGS=10V
- **20mΩ** @VGS=4.5V
**Maximum Drain Current (ID)**: -9A
SI6423DQ-T1-E3-VB It is a single P-channel MOSFET manufactured using Trench technology, with low on-resistance and high current carrying capacity, suitable for low voltage, high-efficiency power control applications. Its low on-resistance ensures low power consumption operation, which is very suitable for applications with high performance requirements such as power management, load switching and battery protection.
---
**Model**: SI6423DQ-T1-E3-VB
**Package Type**: TSSOP8
**Configuration**: Single-P-Channel
**Technology**: Trench
**Maximum Drain-Source Voltage (VDS)**: -30V
**Maximum Gate-Source Voltage (VGS)**: ±20V
**Threshold Voltage (Vth)**: -1.7V
**On-Resistance (RDS(ON))**:
- **16mΩ** @VGS=10V
- **20mΩ** @VGS=4.5V
**Maximum Drain Current (ID)**: -9A
SI6423DQ-T1-E3-VB It is a single P-channel MOSFET manufactured using Trench technology, with low on-resistance and high current carrying capacity, suitable for low voltage, high-efficiency power control applications. Its low on-resistance ensures low power consumption operation, which is very suitable for applications with high performance requirements such as power management, load switching and battery protection.
---
File download
Download PDF document
Download now
Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
**SI6423DQ-T1-E3-VB MOSFET Detailed Parameter Description**
- **Package Type**: TSSOP8
- TSSOP8 package provides a smaller size, suitable for space-constrained applications, and has good thermal management performance. Suitable for use in portable devices and small power modules.
- **Configuration**: Single-P-Channel
- This P-channel MOSFET configuration is suitable for negative voltage control circuits and can handle reverse current protection and switching applications in negative power systems. Widely used in scenarios such as battery management and load switches.
- **VDS (drain-source voltage)**: -30V
- This MOSFET can handle a maximum drain-source voltage of -30V, suitable for efficient power systems in a lower voltage range.
- **VGS (gate-source voltage)**: ±20V
- This gate voltage range allows the MOSFET to operate under different power conditions and is suitable for a variety of power management applications.
- **Vth (threshold voltage)**: -1.7V
- With a lower threshold voltage, it can be turned on at a lower gate voltage, thereby improving the response speed and efficiency of power management.
- **RDS(ON)** (on-resistance):
- **16mΩ** @VGS=10V
- **20mΩ** @VGS=4.5V
- Low on-resistance means lower power loss and higher conversion efficiency, suitable for high-efficiency power conversion applications.
- **ID (drain current)**:
- **-9A**
- The MOSFET can carry a drain current of up to 9A, suitable for power systems with medium power requirements.
---
- **Package Type**: TSSOP8
- TSSOP8 package provides a smaller size, suitable for space-constrained applications, and has good thermal management performance. Suitable for use in portable devices and small power modules.
- **Configuration**: Single-P-Channel
- This P-channel MOSFET configuration is suitable for negative voltage control circuits and can handle reverse current protection and switching applications in negative power systems. Widely used in scenarios such as battery management and load switches.
- **VDS (drain-source voltage)**: -30V
- This MOSFET can handle a maximum drain-source voltage of -30V, suitable for efficient power systems in a lower voltage range.
- **VGS (gate-source voltage)**: ±20V
- This gate voltage range allows the MOSFET to operate under different power conditions and is suitable for a variety of power management applications.
- **Vth (threshold voltage)**: -1.7V
- With a lower threshold voltage, it can be turned on at a lower gate voltage, thereby improving the response speed and efficiency of power management.
- **RDS(ON)** (on-resistance):
- **16mΩ** @VGS=10V
- **20mΩ** @VGS=4.5V
- Low on-resistance means lower power loss and higher conversion efficiency, suitable for high-efficiency power conversion applications.
- **ID (drain current)**:
- **-9A**
- The MOSFET can carry a drain current of up to 9A, suitable for power systems with medium power requirements.
---
Domain and module applications：
**Application fields and modules of SI6423DQ-T1-E3-VB MOSFET**
1. **Battery Management System (BMS)**:
SI6423DQ-T1-E3-VB is suitable for battery management systems, especially in battery charge and discharge management and battery protection modules. Its low on-resistance and stable switching characteristics enable it to work efficiently in battery management systems, providing load switching and overcurrent protection.
2. **Load switching circuit**:
As a single P-channel MOSFET, SI6423DQ-T1-E3-VB is suitable for load switching circuits, especially in efficient power management between low-voltage power supplies and loads. The low RDS(ON) value ensures that the circuit generates less heat and power loss when switching, thereby improving the efficiency of the entire system.
3. **DC-DC Converter**:
In low-power DC-DC converters, SI6423DQ-T1-E3-VB can be used as a synchronous rectifier or load switch MOSFET. Its low on-resistance helps reduce power loss during the conversion process and improve conversion efficiency, making it suitable for DC-DC conversion applications that require high efficiency.
4. **Portable Electronic Devices**:
In consumer electronics such as smartphones, tablets, and portable audio, SI6423DQ-T1-E3-VB can be used as battery protection, reverse current protection, and load switch. Its low power consumption ensures long battery life and high efficiency of portable devices.
5. **Automotive Electronics**:
This MOSFET is also suitable for automotive electronic systems such as battery management, power switching, and load control. Its excellent switching performance and low power consumption characteristics have important applications in the power supply system of automobiles.
6. **Power control and protection module**:
In the power control and protection module, SI6423DQ-T1-E3-VB is widely used in power circuit switches, overcurrent protection, and reverse current protection. It can effectively prevent the circuit from unstable conditions such as short circuits and overcurrent.
7. **High-efficiency power management module**:
In the power management module, this MOSFET can be used as a control switch for the power path to ensure efficient distribution of power. Its low on-resistance reduces power loss and is very suitable for miniaturized, high-efficiency power management systems.
1. **Battery Management System (BMS)**:
SI6423DQ-T1-E3-VB is suitable for battery management systems, especially in battery charge and discharge management and battery protection modules. Its low on-resistance and stable switching characteristics enable it to work efficiently in battery management systems, providing load switching and overcurrent protection.
2. **Load switching circuit**:
As a single P-channel MOSFET, SI6423DQ-T1-E3-VB is suitable for load switching circuits, especially in efficient power management between low-voltage power supplies and loads. The low RDS(ON) value ensures that the circuit generates less heat and power loss when switching, thereby improving the efficiency of the entire system.
3. **DC-DC Converter**:
In low-power DC-DC converters, SI6423DQ-T1-E3-VB can be used as a synchronous rectifier or load switch MOSFET. Its low on-resistance helps reduce power loss during the conversion process and improve conversion efficiency, making it suitable for DC-DC conversion applications that require high efficiency.
4. **Portable Electronic Devices**:
In consumer electronics such as smartphones, tablets, and portable audio, SI6423DQ-T1-E3-VB can be used as battery protection, reverse current protection, and load switch. Its low power consumption ensures long battery life and high efficiency of portable devices.
5. **Automotive Electronics**:
This MOSFET is also suitable for automotive electronic systems such as battery management, power switching, and load control. Its excellent switching performance and low power consumption characteristics have important applications in the power supply system of automobiles.
6. **Power control and protection module**:
In the power control and protection module, SI6423DQ-T1-E3-VB is widely used in power circuit switches, overcurrent protection, and reverse current protection. It can effectively prevent the circuit from unstable conditions such as short circuits and overcurrent.
7. **High-efficiency power management module**:
In the power management module, this MOSFET can be used as a control switch for the power path to ensure efficient distribution of power. Its low on-resistance reduces power loss and is very suitable for miniaturized, high-efficiency power management systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
