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SI6415DQ-T1-GE3-VB Product details
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Product Introduction
**SI6415DQ-T1-GE3-VB** is a **single P-channel MOSFET**, packaged in **TSSOP8**. This MOSFET has a **maximum drain-source voltage (VDS)** of **-30V**, supports a **gate-source voltage (VGS)** range of **±20V**, and uses a **Trench process**, which can provide low on-resistance and high-efficiency current control. Its **gate threshold voltage (Vth)** is **-1.7V**, the on-resistance is **20mΩ** at a **4.5V** gate voltage, **16mΩ** at a **10V** gate voltage, and the maximum drain current is **-9A**. The low on-resistance and high current carrying capacity of this MOSFET enable it to perform well in a variety of power management and switching applications.
**SI6415DQ-T1-GE3-VB** is a **single P-channel MOSFET**, packaged in **TSSOP8**. This MOSFET has a **maximum drain-source voltage (VDS)** of **-30V**, supports a **gate-source voltage (VGS)** range of **±20V**, and uses a **Trench process**, which can provide low on-resistance and high-efficiency current control. Its **gate threshold voltage (Vth)** is **-1.7V**, the on-resistance is **20mΩ** at a **4.5V** gate voltage, **16mΩ** at a **10V** gate voltage, and the maximum drain current is **-9A**. The low on-resistance and high current carrying capacity of this MOSFET enable it to perform well in a variety of power management and switching applications.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
Detailed parameter description
- **Model**: SI6415DQ-T1-GE3-VB
- **Package type**: TSSOP8
- **Configuration**: Single P channel
- **VDS (drain-source voltage)**: -30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: -1.7V
- **RDS(ON) on-resistance**:
- At 4.5V gate voltage: 20mΩ
- At 10V gate voltage: 16mΩ
- **ID (maximum drain current)**: -9A
- **Technology**: Trench (channel process)
- **Model**: SI6415DQ-T1-GE3-VB
- **Package type**: TSSOP8
- **Configuration**: Single P channel
- **VDS (drain-source voltage)**: -30V
- **VGS (gate-source voltage)**: ±20V
- **Vth (gate threshold voltage)**: -1.7V
- **RDS(ON) on-resistance**:
- At 4.5V gate voltage: 20mΩ
- At 10V gate voltage: 16mΩ
- **ID (maximum drain current)**: -9A
- **Technology**: Trench (channel process)
Domain and module applications：
Applications and module examples
1. **Battery Management System (BMS)**: **SI6415DQ-T1-GE3-VB** is suitable for **Battery Management System (BMS)** as a P-channel MOSFET, especially in **Battery Protection** and **Battery Charge Control**. Its low on-resistance characteristics can provide efficient current control in low-power battery applications to protect the battery from over-current or over-voltage damage.
2. **Power Switching and Load Switching**: This MOSFET can be used in **Power Switching** and **Load Switching** applications, especially in **DC-DC Converters** and **Power Management Modules**. By effectively controlling the current flow, **SI6415DQ-T1-GE3-VB** can provide efficient current switching in **Power Supply Systems, Computer Power Supply Units** and other devices to ensure stable power supply.
3. **LED drive circuit**: In **LED drive circuit**, **SI6415DQ-T1-GE3-VB** is an ideal switching element. As a P-channel MOSFET, it can achieve precise control of LED current and provide stable current in **LED lighting system**, thereby improving overall lighting efficiency and extending the service life of LED lamps.
4. **DC-DC converter**: In **DC-DC converter** applications, **SI6415DQ-T1-GE3-VB** can effectively manage power switching, especially in **Buck** and **Boost** converters. Its low on-resistance characteristics reduce power loss, improve conversion efficiency, and are suitable for devices that require efficient switching, such as **portable devices, consumer electronics**.
5. **Automotive electronic systems**: This MOSFET is widely used in **automotive electronic** systems, especially in **battery management, on-board power control, overcurrent protection** and other modules. **SI6415DQ-T1-GE3-VB** can be used in **automotive battery protection circuits** and **electric vehicle battery management systems**, providing reliable power control and load switching for vehicles.
6. **Industrial control and automation**: In **industrial control and automation** applications, **SI6415DQ-T1-GE3-VB** can be used for **power management, load switching and current regulation**. Its low on-resistance and high current carrying capacity make it an ideal choice for **PLC, industrial robot control systems** and **automated production line power modules**.
7. **Communication equipment power management**: **SI6415DQ-T1-GE3-VB** is also suitable for **wireless communication equipment** and **network equipment** in power management modules. In **switches, routers, fiber-optic communication equipment** and other network equipment, this MOSFET can efficiently manage current switching and voltage regulation, improving the energy efficiency and operating stability of the equipment.
8. **Low-power electronic devices**: Due to its low on-resistance and high efficiency, **SI6415DQ-T1-GE3-VB** is an ideal choice for power management circuits in low-power electronic devices (such as **smart watches, Bluetooth headsets, and wearable devices**). Its efficient switching capability and small power loss ensure that these devices can operate stably for a long time.
9. **Efficient power management**: In **efficient power management** systems, **SI6415DQ-T1-GE3-VB** can be used for **load switching, overcurrent protection, power regulation** and other links, and is particularly suitable for applications that require low power loss and high stability, such as **portable power supplies, smart home systems, and battery-driven devices**.
1. **Battery Management System (BMS)**: **SI6415DQ-T1-GE3-VB** is suitable for **Battery Management System (BMS)** as a P-channel MOSFET, especially in **Battery Protection** and **Battery Charge Control**. Its low on-resistance characteristics can provide efficient current control in low-power battery applications to protect the battery from over-current or over-voltage damage.
2. **Power Switching and Load Switching**: This MOSFET can be used in **Power Switching** and **Load Switching** applications, especially in **DC-DC Converters** and **Power Management Modules**. By effectively controlling the current flow, **SI6415DQ-T1-GE3-VB** can provide efficient current switching in **Power Supply Systems, Computer Power Supply Units** and other devices to ensure stable power supply.
3. **LED drive circuit**: In **LED drive circuit**, **SI6415DQ-T1-GE3-VB** is an ideal switching element. As a P-channel MOSFET, it can achieve precise control of LED current and provide stable current in **LED lighting system**, thereby improving overall lighting efficiency and extending the service life of LED lamps.
4. **DC-DC converter**: In **DC-DC converter** applications, **SI6415DQ-T1-GE3-VB** can effectively manage power switching, especially in **Buck** and **Boost** converters. Its low on-resistance characteristics reduce power loss, improve conversion efficiency, and are suitable for devices that require efficient switching, such as **portable devices, consumer electronics**.
5. **Automotive electronic systems**: This MOSFET is widely used in **automotive electronic** systems, especially in **battery management, on-board power control, overcurrent protection** and other modules. **SI6415DQ-T1-GE3-VB** can be used in **automotive battery protection circuits** and **electric vehicle battery management systems**, providing reliable power control and load switching for vehicles.
6. **Industrial control and automation**: In **industrial control and automation** applications, **SI6415DQ-T1-GE3-VB** can be used for **power management, load switching and current regulation**. Its low on-resistance and high current carrying capacity make it an ideal choice for **PLC, industrial robot control systems** and **automated production line power modules**.
7. **Communication equipment power management**: **SI6415DQ-T1-GE3-VB** is also suitable for **wireless communication equipment** and **network equipment** in power management modules. In **switches, routers, fiber-optic communication equipment** and other network equipment, this MOSFET can efficiently manage current switching and voltage regulation, improving the energy efficiency and operating stability of the equipment.
8. **Low-power electronic devices**: Due to its low on-resistance and high efficiency, **SI6415DQ-T1-GE3-VB** is an ideal choice for power management circuits in low-power electronic devices (such as **smart watches, Bluetooth headsets, and wearable devices**). Its efficient switching capability and small power loss ensure that these devices can operate stably for a long time.
9. **Efficient power management**: In **efficient power management** systems, **SI6415DQ-T1-GE3-VB** can be used for **load switching, overcurrent protection, power regulation** and other links, and is particularly suitable for applications that require low power loss and high stability, such as **portable power supplies, smart home systems, and battery-driven devices**.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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