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SI6413DQ-T1-E3-VB Product details
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SI6413DQ-T1-E3-VB MOSFET Product Introduction
SI6413DQ-T1-E3-VB is a P-channel MOSFET in a TSSOP-8 package, designed for low voltage, high-efficiency switching applications. The MOSFET has good conduction characteristics, with a maximum drain-source voltage (VDS) of -30V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of -1.7V. Manufactured with Trench technology, the on-resistance (RDS(ON)) of this MOSFET shows excellent performance at different gate voltages: RDS(ON) is 16mΩ at VGS = 10V and 20mΩ at VGS = 4.5V. In addition, the device has a maximum drain current (ID) of -9A, suitable for efficient load switching and power management applications.
With its efficient switching characteristics, low on-resistance and compact package, SI6413DQ-T1-E3-VB is widely used in power management, low-voltage load switching, DC-DC converters, battery management systems and other fields. It is an indispensable component in high-efficiency power control systems.
SI6413DQ-T1-E3-VB is a P-channel MOSFET in a TSSOP-8 package, designed for low voltage, high-efficiency switching applications. The MOSFET has good conduction characteristics, with a maximum drain-source voltage (VDS) of -30V, a maximum gate-source voltage (VGS) of ±20V, and a threshold voltage (Vth) of -1.7V. Manufactured with Trench technology, the on-resistance (RDS(ON)) of this MOSFET shows excellent performance at different gate voltages: RDS(ON) is 16mΩ at VGS = 10V and 20mΩ at VGS = 4.5V. In addition, the device has a maximum drain current (ID) of -9A, suitable for efficient load switching and power management applications.
With its efficient switching characteristics, low on-resistance and compact package, SI6413DQ-T1-E3-VB is widely used in power management, low-voltage load switching, DC-DC converters, battery management systems and other fields. It is an indispensable component in high-efficiency power control systems.
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Product parameter：
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds2.5 | Rds4.5 | Rds10 | Technology |
|---|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | 16mΩ | Trench |
| VB Package | Configuration | VCE | VGE | VGEth(V) | VCEsat15V | ICE | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds18 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Configuration | VDS(V) | VGS | Vthyp（V） | ID(A) | Rds6 | Technology |
|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P | -30V | -1.7V | -9A | Trench |
| VB Package | Polarity | Vz / VR | Pd | VF | IF | IR | Cd | Type |
|---|---|---|---|---|---|---|---|---|
| TSSOP8 | Single-P |
SI6413DQ-T1-E3-VB MOSFET Detailed parameter description
- **Model**: SI6413DQ-T1-E3-VB
- **Package type**: TSSOP-8
- **Configuration**: Single-P-Channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- RDS(ON) @ VGS = 10V: 16mΩ
- RDS(ON) @ VGS = 4.5V: 20mΩ
- **Maximum drain current (ID)**: -9A
- **Technology**: Trench technology
- **Maximum power dissipation (Pd)**: 1.25W (typical)
- **Operating temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
- **Model**: SI6413DQ-T1-E3-VB
- **Package type**: TSSOP-8
- **Configuration**: Single-P-Channel
- **Maximum drain-source voltage (VDS)**: -30V
- **Maximum gate-source voltage (VGS)**: ±20V
- **Threshold voltage (Vth)**: -1.7V
- **On-resistance (RDS(ON))**:
- RDS(ON) @ VGS = 10V: 16mΩ
- RDS(ON) @ VGS = 4.5V: 20mΩ
- **Maximum drain current (ID)**: -9A
- **Technology**: Trench technology
- **Maximum power dissipation (Pd)**: 1.25W (typical)
- **Operating temperature range**: -55°C to +150°C
- **Storage temperature range**: -55°C to +150°C
Domain and module applications：
SI6413DQ-T1-E3-VB MOSFET Applications and Module Examples
1. **Power Management and Load Switches**
SI6413DQ-T1-E3-VB MOSFET plays a vital role in power management systems, especially in DC-DC converters. P-channel MOSFET can effectively control power switches, reduce power losses, and provide excellent current switching characteristics. Its low RDS(ON) optimizes converter efficiency and is widely used in power management modules for consumer electronics, communication equipment, and computer systems.
2. **Automotive Electronics**
In automotive electronics applications, SI6413DQ-T1-E3-VB MOSFET is used in battery management systems, load switches, and power supply modules. Due to its low on-resistance characteristics, it can reduce energy loss and improve the charging efficiency of automotive batteries. It is especially suitable for battery protection and power conditioning systems in electric vehicles (EVs) and hybrid electric vehicles (HEVs).
3. **Consumer electronics**
In consumer electronics such as smartphones, tablets, and wearable devices, SI6413DQ-T1-E3-VB is mainly used for battery management, power switching, and load control. Low RDS(ON) helps extend battery life and improve the overall efficiency of the device. The high performance and small package design of MOSFET make it very suitable for use in miniaturized, high-density electronic products.
4. **Battery Management System (BMS)**
In the battery management system, SI6413DQ-T1-E3-VB MOSFET is used for battery protection, charging, and load switching. Due to its low on-resistance and efficient switching characteristics, it can ensure that the battery operates within a safe range while reducing power loss. It is suitable for applications such as portable power systems, energy storage devices, and power tools.
5. **LED drive and lighting system**
In LED drive and intelligent lighting systems, SI6413DQ-T1-E3-VB MOSFET can be used for efficient current control and power regulation. Through its low RDS(ON) characteristics, it can effectively improve the efficiency of LED drivers and reduce heat loss. In the fields of smart home, commercial lighting, automotive lighting control, etc., SI6413DQ-T1-E3-VB MOSFET can provide efficient and reliable current control.
6. **Industrial automation and sensor system**
SI6413DQ-T1-E3-VB is mainly used in electric actuators, motor drives and sensor power modules in industrial automation systems. MOSFET has fast switching performance, can handle high power loads and improve the overall efficiency of the system. Due to its excellent performance in high-frequency switching control, it is also suitable for automation equipment and robotic systems.
1. **Power Management and Load Switches**
SI6413DQ-T1-E3-VB MOSFET plays a vital role in power management systems, especially in DC-DC converters. P-channel MOSFET can effectively control power switches, reduce power losses, and provide excellent current switching characteristics. Its low RDS(ON) optimizes converter efficiency and is widely used in power management modules for consumer electronics, communication equipment, and computer systems.
2. **Automotive Electronics**
In automotive electronics applications, SI6413DQ-T1-E3-VB MOSFET is used in battery management systems, load switches, and power supply modules. Due to its low on-resistance characteristics, it can reduce energy loss and improve the charging efficiency of automotive batteries. It is especially suitable for battery protection and power conditioning systems in electric vehicles (EVs) and hybrid electric vehicles (HEVs).
3. **Consumer electronics**
In consumer electronics such as smartphones, tablets, and wearable devices, SI6413DQ-T1-E3-VB is mainly used for battery management, power switching, and load control. Low RDS(ON) helps extend battery life and improve the overall efficiency of the device. The high performance and small package design of MOSFET make it very suitable for use in miniaturized, high-density electronic products.
4. **Battery Management System (BMS)**
In the battery management system, SI6413DQ-T1-E3-VB MOSFET is used for battery protection, charging, and load switching. Due to its low on-resistance and efficient switching characteristics, it can ensure that the battery operates within a safe range while reducing power loss. It is suitable for applications such as portable power systems, energy storage devices, and power tools.
5. **LED drive and lighting system**
In LED drive and intelligent lighting systems, SI6413DQ-T1-E3-VB MOSFET can be used for efficient current control and power regulation. Through its low RDS(ON) characteristics, it can effectively improve the efficiency of LED drivers and reduce heat loss. In the fields of smart home, commercial lighting, automotive lighting control, etc., SI6413DQ-T1-E3-VB MOSFET can provide efficient and reliable current control.
6. **Industrial automation and sensor system**
SI6413DQ-T1-E3-VB is mainly used in electric actuators, motor drives and sensor power modules in industrial automation systems. MOSFET has fast switching performance, can handle high power loads and improve the overall efficiency of the system. Due to its excellent performance in high-frequency switching control, it is also suitable for automation equipment and robotic systems.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
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