Product introduction：
1. Product Introduction:
**SI5975DC-T1-GE3-VB** is a single P-channel MOSFET in DFN8 (3x2)-B package, which is very suitable for low-voltage and high-efficiency applications. This MOSFET has a maximum drain-source voltage (VDS) of -20V, a maximum gate-source voltage (VGS) of ±8V, and an operating gate-source threshold voltage (Vth) of -0.8V. Its maximum drain current (ID) is -4A, and it has a low on-resistance characteristic: 100mΩ at VGS=4.5V and 83mΩ at VGS=10V. Using Trench technology, this MOSFET provides low power consumption and high-efficiency switching performance, which is particularly suitable for load switches, battery management and other fields in low-power applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| DFN8(3X2)-B |
Single-P |
-20V |
|
-0.8V |
-4A |
|
|
83mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| DFN8(3X2)-B |
Single-P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| DFN8(3X2)-B |
Single-P |
-20V |
|
-0.8V |
-4A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| DFN8(3X2)-B |
Single-P |
-20V |
|
-0.8V |
-4A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| DFN8(3X2)-B |
Single-P |
|
|
|
|
|
|
|
2. Detailed parameter description:
- **Model**: SI5975DC-T1-GE3-VB
- **Package type**: DFN8 (3x2)-B
- **Configuration**: Single P channel
- **Maximum drain-source voltage (VDS)**: -20V
- **Maximum gate-source voltage (VGS)**: ±8V
- **Gate-source threshold voltage (Vth)**: -0.8V
- **On-resistance (RDS(ON))**:
- 100mΩ (at VGS = 4.5V)
- 83mΩ (at VGS = 10V)
- **Maximum drain current (ID)**: -4A
- **Technology**: Trench process
Domain and module applications：
3. Application fields and modules:
# 1. **Battery management and protection circuit**:
SI5975DC-T1-GE3-VB can act as a load switch in the battery management system to ensure that the circuit is cut off when the battery voltage is too low or to protect the battery from over-discharge. Its low on-resistance and reliable switching performance make it very suitable for use in battery protection boards, smart battery packs, UPS (uninterruptible power supply) and portable power modules to provide efficient power control and battery management.
Summary:
SI5975DC-T1-GE3-VB is a single P-channel MOSFET with low on-resistance and high current carrying capacity, suitable for applications such as low-voltage power management, battery protection, current control and load switching. Its efficient switching performance and low power loss make it an ideal switching element in battery-driven devices, low-power electronic products and power management systems. Whether in portable devices or industrial automation, it can provide excellent power management solutions.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
* If you have any questions about the product, please fill out the form to submit, we will reply you within 24 hours
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