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SI5905BDC-T1-GE3-VB Product details

Product introduction:

Product Introduction: **SI5905BDC-T1-GE3-VB** is a **P-Channel MOSFET** launched by **Vishay**, using **DFN8(3X2)-B** package, designed for low voltage, high efficiency applications. The **VDS** of this MOSFET is **-20V** at most, and supports **±8V** gate-source voltage (**VGS**), which is suitable for reverse current control of positive and negative power supplies. Its **Vth** threshold voltage is **-0.8V**, which means that the MOSFET can be turned on at a lower gate voltage and has higher efficiency. **RDS(ON)** is **100mΩ** at **VGS = 4.5V** and **83mΩ** at **VGS = 10V**, providing a lower on-resistance, thereby reducing power loss and improving system efficiency. The maximum drain current (**ID**) is **-4A**, which is suitable for most medium power load control applications. Based on **Trench** technology, SI5905BDC-T1-GE3-VB provides excellent thermal performance and low switching losses, making it ideal for use in high-frequency and high-efficiency circuits.

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Product parameter:

VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds2.5 Rds4.5 Rds10 Technology
DFN8(3X2)-B Single-P -20V -0.8V -4A 83mΩ Trench
VB Package Configuration VCE VGE VGEth(V) VCEsat15V ICE Technology
DFN8(3X2)-B Single-P Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds18 Technology
DFN8(3X2)-B Single-P -20V -0.8V -4A Trench
VB Package Configuration VDS(V) VGS Vthyp(V) ID(A) Rds6 Technology
DFN8(3X2)-B Single-P -20V -0.8V -4A Trench
VB Package Polarity Vz / VR Pd VF IF IR Cd Type
DFN8(3X2)-B Single-P
Detailed parameter description

| **Parameter** | **Value** |
|-----------------------|----------------------------|
| **Model** | SI5905BDC-T1-GE3-VB |
| **Package** | DFN8(3X2)-B |
| **Configuration** | Single-P-Channel |
| **Maximum drain-source voltage (VDS)** | -20V |
| **Gate-source voltage (VGS)** | ±8V |
| **Threshold voltage (Vth)** | -0.8V |
| **On-resistance (RDS(ON))** | 100mΩ (VGS = 4.5V) |
| | 83mΩ (VGS = 10V) |
| **Maximum drain current (ID)** | -4A |
| **Technology** | Trench |
| **Maximum power loss (P_D)** | 1.2W |
| **Input capacitance (C_iss)** | 600pF |
| **Output capacitance (C_oss)** | 90pF |
| **Reverse recovery time (T_rr)** | 70ns |

Domain and module applications:

Product application areas and module examples

1. **DC-DC converter and power management**
- **Application examples**: Si5905BDC-T1-GE3-VB can be widely used in **DC-DC converters**, especially in **boost converter** or **buck converter**. Its **low RDS(ON)** characteristics enable it to efficiently regulate current while reducing power loss and improving conversion efficiency. It is particularly suitable for battery-powered systems such as wireless sensors, portable electronic devices, and small power modules.
- **Module applications**: battery management systems, power adapters, portable device power modules, vehicle power control, etc.

2. **Battery management and protection**
- **Application examples**: This MOSFET is often used in battery management systems (BMS) as a switch control element for batteries. During battery charging and discharging, Si5905BDC-T1-GE3-VB can provide efficient current regulation, protect the battery from overcurrent or overvoltage, and extend battery life.
- **Module Application**: Battery protection circuit, overcurrent protection, battery management system (BMS), battery balancing system, etc.

3. **Motor drive and control**
- **Application examples**: In motor drive applications, Si5905BDC-T1-GE3-VB can be used to control DC motors or stepper motors, especially for systems that require efficient switching of current direction. Its low on-resistance and high current carrying capacity ensure that energy loss is reduced and efficiency is optimized during motor operation.
- **Module Application**: DC motor drive, power tools, electric curtain control, electric toys, etc.

4. **Load switch and load switching**
- **Application examples**: Because this MOSFET has a **P-Channel** structure, it is very suitable for load switching applications, especially in situations where load switching needs to be integrated with power current control. Its low RDS(ON) reduces switching losses during switching and ensures the stability of load control.
- **Module Application**: Load switch, smart switch, overcurrent protection module, current reverse control, etc.

5. **Solar cell and inverter system**
- **Application example**: In solar energy systems, Si5905BDC-T1-GE3-VB can be used for switch control of solar inverters. In these applications, it can efficiently adjust the direction of current to ensure energy transmission from solar cells to the grid while optimizing the conversion efficiency of the inverter.
- **Module Application**: Solar inverter, battery management, solar cell charging system, etc.

6. **Portable consumer electronic devices**
- **Application example**: Due to its small package, Si5905BDC-T1-GE3-VB is very suitable for power management of portable electronic devices. For example, it can be used in battery management systems in smartphones, tablets and wearable devices to provide efficient current regulation and switch control.
- **Module Application**: Portable power management, wireless device battery protection, smart home devices, etc.

* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features

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