Product introduction：
Product Introduction:
**SI4967DY-T1-E3-VB** is a dual P-channel power MOSFET in SOP8 package, which is particularly suitable for low voltage and high efficiency switching applications. This MOSFET has a drain-source voltage (V_DS) of -20V and a maximum gate-source voltage (V_GS) of ±20V, which is suitable for negative voltage systems. The switching threshold voltage (V_th) is -1.2V, which makes it turn on quickly in negative voltage power supply systems and is suitable for applications requiring fast response. Its on-resistance (R_DS(ON)) is 18mΩ (V_GS = 4.5V) and 16mΩ (V_GS = 10V), which indicates that it has very low resistance when turned on, which can effectively reduce power loss and improve efficiency. Using Trench technology, this MOSFET exhibits low switching loss and good transmission performance in high-frequency switching applications.
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Product parameter：
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds2.5 |
Rds4.5 |
Rds10 |
Technology |
| SOP8 |
Dual-P+P |
-20V |
|
-1.2V |
-8.9A |
|
|
16mΩ |
Trench |
| VB Package |
Configuration |
VCE |
VGE |
VGEth(V) |
VCEsat15V |
ICE |
Technology |
| SOP8 |
Dual-P+P |
|
|
|
|
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds18 |
Technology |
| SOP8 |
Dual-P+P |
-20V |
|
-1.2V |
-8.9A |
|
Trench |
| VB Package |
Configuration |
VDS(V) |
VGS |
Vthyp（V） |
ID(A) |
Rds6 |
Technology |
| SOP8 |
Dual-P+P |
-20V |
|
-1.2V |
-8.9A |
|
Trench |
| VB Package |
Polarity |
Vz / VR |
Pd |
VF |
IF |
IR |
Cd |
Type |
| SOP8 |
Dual-P+P |
|
|
|
|
|
|
|
Detailed parameter description:
- **Model**: SI4967DY-T1-E3-VB
- **Package**: SOP8
- **Configuration**: Dual-P+P-Channel
- **Drain-source voltage (V_DS)**: -20V
- **Gate-source voltage (V_GS)**: ±20V
- **Switching threshold voltage (V_th)**: -1.2V
- **On-resistance (R_DS(ON)）**:
- 18mΩ (V_GS = 4.5V)
- 16mΩ (V_GS = 10V)
- **Maximum drain current (I_D)**: -8.9A
- **Technology**: Trench technology
- **Maximum power dissipation (P_D)**: Depending on the operating conditions, the power loss can be estimated from the current and the on-resistance.
- **Operating temperature range**: -55°C to +150°C
Domain and module applications：
Application fields and module examples:
1. **DC-DC converter and power management system**:
**SI4967DY-T1-E3-VB**'s low on-resistance and dual P-channel configuration make it very suitable for DC-DC converters, especially in negative voltage conversion and power management systems. Its excellent current control performance can improve power conversion efficiency and reduce power loss, and is widely used in mobile phones, notebooks, portable devices, and industrial power systems.
2. **Battery Management System (BMS)**:
In the battery management system (BMS), **SI4967DY-T1-E3-VB** can be used for precise battery charge and discharge management. Due to its low RDS(ON) characteristics, it can effectively reduce power loss in the battery system and improve battery charging efficiency and service life. It is suitable for electric vehicles (EV), hybrid electric vehicles (HEV) and other battery-driven systems, and can provide efficient power switching and load management.
3. **Load Switch and Power Switch**:
In load switch applications, the dual P-channel configuration of **SI4967DY-T1-E3-VB** is very suitable for reverse voltage protection and power switching, especially in applications requiring high efficiency and low power consumption. It can achieve low-power power switching, reduce losses, and provide high reliability. It is widely used in power management modules for smart homes, IoT devices, and portable devices.
4. **LED Lighting and Driver Power**:
In LED driver power, **SI4967DY-T1-E3-VB** MOSFET can provide efficient current control. Its low on-resistance and high current carrying capacity make it widely used in LED lighting power. This MOSFET can provide stable current and reduce power loss. It is suitable for high-efficiency LED driver modules and energy-saving lighting systems to ensure stable and long-lasting operation of lamps.
5. **Smart Home and IoT Devices**:
Due to the low on-resistance and good switching performance of **SI4967DY-T1-E3-VB**, it is also widely used in smart home and IoT devices. In these systems, it can provide efficient power management, which is particularly suitable for low-power wireless communication modules, electric curtains, smart lighting systems, etc., to reduce energy consumption and extend the service life of the equipment.
6. **Power Tools and Robot Drive Systems**:
In power tools and robot drive systems, **SI4967DY-T1-E3-VB** can effectively manage high current and power switches to ensure efficient operation of the drive system. Due to its low on-resistance, the system power loss is reduced, and it has been widely used in drive systems that require higher efficiency.
* Please note: the above is only an example application scenario, the specific application depends on the requirements and conditions of the system design. When using this device, consult its data sheet for detailed technical specifications and features
Technical support：
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